AON6702 [AOS]
Transistor;
| 型号： | AON6702 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6702
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6702 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
ID (at VGS=10V)
85A
R
DS(ON) (at VGS=10V)
< 2mΩ
< 3mΩ
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
67
A
Pulsed Drain Current C
IDM
260
26
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
A
20
IAR
72
A
EAR
259
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.4
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
18
55
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
1.5
Rev 2: November 2010
www.aosmd.com
Page 1 of 7
AON6702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.1
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.4
µA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.2
1.8
260
A
1.7
2.6
2
3.2
3
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.4
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
140
0.45
0.7
85
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4720 5900 7080
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
770
336
0.2
1100 1430
560
0.4
784
0.6
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
82
41
14
14
103
51
17
23
17
11
61
27
123
61
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
20
32
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
14
32
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
40
20
48
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment .
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: November 2010
www.aosmd.com
Page 2 of 7
AON6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
10V
4V
VDS=5V
4.5V
3.5V
60
125°C
60
VGS=3V
40
40
25°C
20
20
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
3.0
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
2.5
2.0
1.5
1.0
VGS=4.5V
ID=20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
5
4
3
2
1
1.0E+02
ID=20A
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: November 2010
www.aosmd.com
Page 3 of 7
AON6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
20
40
60
g (nC)
80
100
120
0
5
10
V
15
DS (Volts)
20
25
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
700
600
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
RDS(ON)
10µs
TJ(Max)=150°C
TC=25°C
limited
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
T
R
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: November 2010
www.aosmd.com
Page 4 of 7
AON6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
230
200
170
140
110
80
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
50
20
0
25
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
θJA=55°C/W
R
0.1
0.01
PD
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: November 2010
www.aosmd.com
Page 5 of 7
AON6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.7
0.6
0.5
0.4
0.3
0.2
20A
10A
VDS=30V
5A
VDS=15V
IS=1A
0
25
50
75
100
125
150
175
0
25
50
75
100 125 150 175
Temperature (°C)
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
60
50
40
30
20
8
7
6
5
4
20
16
12
8
3
di/dt=800A/µs
di/dt=800A/µs
125ºC
125ºC
2.5
2
trr
Qrr
25ºC
25ºC
1.5
1
25ºC
25ºC
S
Irm
125ºC
4
0.5
0
125ºC
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
S (A)
I
S (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
55
10
8
25
20
15
10
5
2.5
2
trr
50
45
40
35
30
25
20
15
10
5
Is=20A
Is=20A
125ºC
125ºC
25ºC
6
1.5
1
25ºC
25ºC
25ºC
Qrr
4
S
125º
125ºC
2
0.5
0
Irm
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 2: November 2010
www.aosmd.com
Page 6 of 7
AON6702
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 2: November 2010
www.aosmd.com
Page 7 of 7
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明