AON6884 [AOS]
40V Dual N-Channel MOSFET; 40V双N沟道MOSFET
| 型号： | AON6884 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 40V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6884
40V Dual N-Channel MOSFET
General Description
Product Summary
VDS
40V
The AON6884 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This is an
all purpose device that is suitable for use in a wide range
of power conversion applications.
ID (at VGS=10V)
34A
R
DS(ON) (at VGS=10V)
< 11.3mΩ
< 13.8mΩ
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
D1
D2
Top View
1
2
3
4
8
S1
D1
7
D1
G1
S2
6
D2
5
G2
D2
G1
G2
S1
S2
DFN5X6 EP2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
34
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
21
A
Pulsed Drain Current C
IDM
120
TA=25°C
TA=70°C
9
Continuous Drain
Current
IDSM
A
7
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
EAS, EAR
61
mJ
TC=25°C
Power Dissipation B
TC=100°C
21
PD
W
8
TA=25°C
1.6
1
PDSM
W
°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
35
65
5
Max
45
80
6
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
Rev 1: November 2010
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Page 1 of 6
AON6884
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
1.55
120
2.1
A
9.4
14
11.3
17
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=10A
11
13.8
mΩ
S
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
50
0.7
1
V
Maximum Body-Diode Continuous Current
25
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1200 1500 1950
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
150
80
215
135
3.5
280
190
5.3
VGS=0V, VDS=0V, f=1MHz
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
10
27.2
13.6
4.5
33
16
5.4
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=20V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.6
3.8
6.4
6.4
VGS=10V, VDS=20V, RL=2Ω,
RGEN=3Ω
17.2
29.6
16.8
ns
tD(off)
tf
ns
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
35
17
45
ns
Qrr
25
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
4.5V
4V
25°C
125°C
3.5V
VGS=3V
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
20
16
12
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=10A
VGS=4.5V
VGS=4.5V
VGS=10V
ID=10A
4
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
1.0E+01
ID=10A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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Page 3 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=20V
ID=10A
8
2000
1500
1000
500
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
g (nC)
20
25
30
0
10
20
DS (Volts)
30
40
Q
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=6°C/W
T
R
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
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Page 4 of 6
AON6884
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
TA=25°C
20
TA=100°C
15
TA=150°C
TA=125°C
10
5
10
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
θJA=80°C/W
R
0.1
PD
0.01
Ton
Single Pulse
0.01
T
0.001
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
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Page 5 of 6
AON6884
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: November 2010
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Page 6 of 6
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