AON7262E [AOS]
MOSFET N-CH 60V 34A 8DFN;
| 型号： | AON7262E |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | MOSFET N-CH 60V 34A 8DFN 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7262E
60V N-Channel AlphaSGT TM
General Description
Product Summary
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• ESD protected
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
34A
< 6.2mΩ
< 8.5mΩ
RDS(ON) (at VGS=4.5V)
Typical ESD protection
HBM Class 2
Applications
100% UIS Tested
100% Rg Tested
• High efficiency power supply
• Secondary synchronus rectifier
DFN 3x3 EP
D
Top View
Bottom View
Top View
1
8
2
3
7
6
G
Pin 1
4
5
S
Pin 1
Orderable Part Number
Package Type
DFN 3x3 EP
Form
Tape & Reel
Minimum Order Quantity
AON7262E
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
34
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
A
34
IDM
135
21
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
A
17
IAS
23
A
mJ
V
C
Avalanche energy
L=0.3mH
10µs
EAS
79
I
VDS Spike
VSPIKE
72
TC=25°C
TC=100°C
TA=25°C
TA=70°C
43
PD
W
Power Dissipation B
Power Dissipation A
17
5.0
PDSM
W
3.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
25
55
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
45
RθJC
2.4
2.9
Rev.1.0: January 2016
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Page 1 of 6
AON7262E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
V
DS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±10
2.2
6.2
10
µA
V
VGS(th)
VDS=VGS, ID=250µA
1.2
1.65
4.8
7.8
6.2
75
VGS=10V, ID=20A
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=18A
VDS=5V, ID=20A
IS=1A, VGS=0V
8.5
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current G
34
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1652
520
52
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.6
1.3
2.0
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30
15
3.5
6.5
6
45
25
nC
nC
nC
nC
ns
Total Gate Charge
V
GS=10V, VDS=30V, ID=20A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
5
ns
tD(off)
tf
Turn-Off DelayTime
29
7
ns
Turn-Off Fall Time
ns
trr
IF=20A, di/dt=500A/µs
IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19
60
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2016
www.aosmd.com
Page 2 of 6
AON7262E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
4V
VDS=5V
3.5V
4.5V
3.0V
125°C
25°C
VGS=2.5V
1
2
3
4
5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
8
2
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
6
4
2
VGS=10V
VGS=4.5V
ID=18A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: January 2016
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Page 3 of 6
AON7262E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=30V
ID=20A
8
6
4
2
0
2000
1500
1000
500
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
Qg (nC)
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
VGS> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.9°C/W
PDM
0.1
0.01
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2016
www.aosmd.com
Page 4 of 6
AON7262E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
40
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PDM
0.01
0.001
Single Pulse
0.01
Ton
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2016
www.aosmd.com
Page 5 of 6
AON7262E
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
I AR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev.1.0: January 2016
www.aosmd.com
Page 6 of 6
相关型号：
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AOS
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