AON7409 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET![AON7409](http://pdffile.icpdf.com/pdf1/p00193/img/icpdf/AON740_1092197_icpdf.jpg)
型号: | AON7409 |
厂家: | ![]() |
描述: | 30V P-Channel MOSFET |
文件: | 总6页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AON7409
30V P-Channel MOSFET
General Description
Product Summary
VDS
The AON7409 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
-30V
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
-32A
< 8.5mΩ
< 17mΩ
Typical ESD protection
HBM Class 3A
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
D
Top View
Bottom View
Top View
1
8
7
6
5
2
3
G
4
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
-32
V
A
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
-25
Pulsed Drain Current C
IDM
-128
-16
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
-12.5
40
IAS
A
EAS
80
mJ
TC=25°C
Power Dissipation B
TC=100°C
96
PD
W
38.5
3.1
TA=25°C
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
30
60
1
RθJA
Steady-State
Steady-State
75
RθJC
1.3
Rev 0: Oct. 2012
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Page 1 of 6
AON7409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±25V
VDS=VGS, ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-16A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-2.7
uA
V
VGS(th)
ID(ON)
-1.6
-2.1
-128
A
6.8
9.6
8.5
11.5
17
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-10A
VDS=-5V, ID=-16A
IS=-1A,VGS=0V
12.8
-43
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
V
Maximum Body-Diode Continuous Current G
-32
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2142
474
363
2.3
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
4.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
41
18.5
15
58
27
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-16A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
13
VGS=-10V, VDS=-15V, RL=0.9Ω,
RGEN=3Ω
12
ns
tD(off)
tf
34
ns
18.5
ns
trr
IF=-16A, dI/dt=500A/µs
IF=-16A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17.5
44.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2012
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Page 2 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
-10V
-7V
VDS=-5V
-5V
-4.5V
-4V
25°C
125°C
VGS=-3.5V
4
0
1
2
3
4
5
6
0
1
2
3
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
18
16
14
12
10
8
1.6
VGS=-10V
ID=-16A
1.4
1.2
1
VGS=-4.5V
VGS=-10V
=-4.5V
VGS
ID=-10A
6
4
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=-16A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
-VSD (Volts)
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Oct. 2012
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Page 3 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=-10V
ID=-16A
2500
2000
1500
1000
500
Ciss
8
6
4
Coss
2
Crss
0
0
0
10
20
30
40
50
0
5
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
160
120
80
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Ca
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.3 °C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
1E-05
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2012
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Page 4 of 6
AON7409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
80
60
40
20
0
TA=100°C
100
10
1
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
0
1
0
25
50
75
100
125
150
1E-05
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct. 2012
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Page 5 of 6
AON7409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0: Oct. 2012
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Page 6 of 6
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