AON7700L [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AON7700L
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总4页 (文件大小：210K)
中文：	中文翻译
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AON7700

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMAON7700/L uses advanced trench technology with a

monolithically integrated Schottky diode to provide excellent

R_DS(ON),and low gate charge.

V_DS(V) = 30V

I_D= 12A

(V_GS= 10V)

This device is suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

_DS(ON)< 8.5mΩ (V_GS= 10V)

R_DS(ON)< 10mΩ (V_GS= 4.5V)

- RoHS Compliant.

- Halogen Free

DFN 3x3

Top View

Bottom View

Pin 1

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,H

±12

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current^C

Continuous Drain

Current ^G

I_DM

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_DSM

P_D

Power Dissipation ^B

Power Dissipation ^A

3.1

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJC

Steady-State

Maximum Junction-to-Case ^D

3.1

3.7

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7700

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

_DS=30V, V_GS=0V

100

500

100

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS= ±12V

V_GS(th)

I_D(ON)

V_DS=V_GSI_D=250µA

1.7

_GS=10V, V_DS=5V

_GS=10V, I_D=12A

6.7

8.5

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

mΩ

_GS=4.5V, I_D=10A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=5V, I_D=12A

I_S=1A,V_GS=0V

0.39

0.5

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

3395

490

185

4250

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

1.5

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

9.5

8.4

_GS=4.5V, V_DS=15V, I_D=10A

V_GS=10V, V_DS=15V, R_L=1.25Ω,

_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=12A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device in a still air environment with T_A=25°C. The power dissipation P_DSMand current rating I_DSMare

based on T_J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R _θJCand case to ambient.

150

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

H. The maximum current rating is limited by bond-wires.

Rev0: September 2007

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7700

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_DS=5V

4.5V

3.5V

125°C

25°C

VGS=2.5V

-40°C

1.5

2.5

3.5

V_DS(Volts)

V_GS(Volts)

Figure 1: On-Region Characteristics

Figure 2: Transfer Characteristics

1.6

1.4

1.2

V_GS=10V

I_D=12A

8.5

V_GS=4.5V

I_D=10A

7.5

V_GS=10V

6.5

0.8

0.6

-60 -30

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

120 150 180

_D(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

150

I_D=12A

0.1

125°C

25°C

0.01

0.001

-40°C

0.0

0.2

0.4

0.6

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.8

1.0

1.2

_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7700

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

6000

V_DS=15V

I_D=12A

5000

4000

3000

2000

1000

C_iss

C_oss

C_rss

V_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

1000

800

600

400

200

100

10µs

T_J(Max)=150°C

T_A=25°C

R_DS(ON)

limited

50µs

100µs

500µs

T_J(Max)=150°C

T_C=25°C

0.00001

0.001

0.1

1000

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-

Ambient (Note G)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=60°C/W

0.01

0.001

Single Pulse

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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