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AON7700_12 [AOS]

30V N-Channel MOSFET; 30V N沟道MOSFET
AON7700_12
型号： AON7700_12
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

30V N-Channel MOSFET
30V N沟道MOSFET
文件： 总7页 (文件大小：301K)
中文：  中文翻译
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AON7700  
30V N-Channel MOSFET  
TM  
SRFET  
General Description  
Product Summary  
SRFETTM AON7700 uses advanced trench technology  
with a monolithically integrated Schottky diode to provide  
excellent RDS(ON),and low gate charge. This device is  
suitable for use as a low side FET in SMPS, load  
switching and general purpose applications.  
VDS  
30V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
40A  
< 7.2mΩ  
< 8.6mΩ  
100% UIS Tested  
100% Rg Tested  
DFN 3x3 EP  
D
Top View  
Bottom View  
Top View  
SRFETTM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
1
8
2
3
7
6
4
5
G
Pin 1  
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
±12  
40  
V
Gate-Source Voltage  
VGS  
V
A
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
28  
Pulsed Drain Current C  
IDM  
100  
16  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
12  
IAS  
17  
A
EAS  
14  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
26  
PD  
W
10  
TA=25°C  
3.1  
PDSM  
W
°C  
Power Dissipation A  
2
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
30  
60  
4
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
75  
RθJC  
4.8  
Rev 3: May. 2012  
www.aosmd.com  
Page 1 of 7  
AON7700  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=10mA, VGS=0V  
VDS=30V, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
0.5  
mA  
100  
IDSS  
Zero Gate Voltage Drain Current  
TJ=125°C  
TJ=125°C  
VDS=0V, VGS=±12V  
VDS=VGS，ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=12A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
2.2  
nA  
V
VGS(th)  
ID(ON)  
1.2  
1.7  
100  
A
5.5  
9
7.2  
11  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=10A  
6.6  
45  
0.4  
8.6  
mΩ  
S
VDS=5V, ID=12A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
IS=1A,VGS=0V  
0.7  
30  
V
Maximum Body-Diode Continuous Current  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1690  
175  
120  
1.4  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
0.7  
2.1  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
31  
14  
4
44  
20  
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
VGS=10V, VDS=15V, ID=12A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
5
6
VGS=10V, VDS=15V, RL=1.25Ω,  
RGEN=3Ω  
9
ns  
tD(off)  
tf  
27  
4
ns  
ns  
trr  
IF=12A, dI/dt=500A/µs  
IF=12A, dI/dt=500A/µs  
7
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
8
nC  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given  
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
dissipation limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initial TJ =25°C.  
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming  
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
G. The maximum current rating is package limited.  
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 3: May 2012  
www.aosmd.com  
Page 2 of 7  
AON7700  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
10V  
VDS=5V  
3.5V  
4.5V  
3V  
125°C  
25°C  
VGS=2.5V  
4
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
10  
8
2
1.8  
VGS=4.5V  
ID=10A  
VGS=4.5V  
1.6  
1.4  
1.2  
1
6
=10V
VGS  
ID=12A  
4
VGS=10V  
0.8  
2
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
15  
20  
ID (A)  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction Temperature  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
(Note E)  
25  
20  
15  
10  
5
1.0E+01  
ID=12A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
125°C  
25°C  
25°C  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
VGS (Volts)  
VSD (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Figure 6: Body-Diode Characteristics (Note E)  
Rev 3: May 2012  
www.aosmd.com  
Page 3 of 7  
AON7700  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
2500  
VDS=15V  
ID=12A  
8
2000  
1500  
1000  
500  
0
Ciss  
6
4
2
Coss  
Crss  
0
0
5
10  
15  
Qg (nC)  
20  
25  
30  
35  
0
5
10  
VDS (Volts)  
Figure 8: Capacitance Characteristics  
15  
20  
25  
30  
Figure 7: Gate-Charge Characteristics  
200  
160  
120  
80  
1000.0  
100.0  
10.0  
1.0  
TJ(Max)=150°C  
TC=25°C  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
DC  
TJ(Max)=150°C  
TC=25°C  
0.1  
40  
0.0  
0
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-Case  
Figure 9: Maximum Forward Biased  
Safe Operating Area (Note F)  
(Note F)  
10  
1
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJC=4.8°C/W  
PD  
0.1  
0.01  
Ton  
Single Pulse  
T
0.00001  
0.0001  
0.001  
0.01  
Pulse Width (s)  
0.1  
1
10  
100  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 3: May 2012  
www.aosmd.com  
Page 4 of 7  
AON7700  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
30  
50  
25  
20  
15  
10  
5
40  
30  
20  
10  
0
0
0
25  
50  
75  
TCASE (°C)  
100  
125  
150  
0
25  
50  
75  
TCASE (°C)  
100  
125  
150  
Figure 12: Power De-rating (Note F)  
Figure 13: Current De-rating (Note F)  
10000  
1000  
100  
10  
TA=25°C  
1
0.00001  
0.001  
0.1  
Pulse Width (s)  
10  
1000  
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)  
10  
1
D=Ton/T  
TJ,PK=TA+PDM.ZθJA.RθJA  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJA=75°C/W  
0.1  
PD  
0.01  
Single Pulse  
Ton  
T
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)  
Rev 3: May 2012  
www.aosmd.com  
Page 5 of 7  
AON7700  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
1.0E-06  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
20A  
10A  
VDS=30V  
5A  
VDS=15V  
IS=1A  
0
50  
100  
150  
200  
0
50  
100  
Temperature (°C)  
150  
200  
Temperature (°C)  
Figure 17: Diode Forward voltage vs. Junction  
Temperature  
Figure 16: Diode Reverse Leakage Current vs.  
Junction Temperature  
15  
12  
9
12  
10  
8
15  
12  
9
3
di/dt=800A/µs  
di/dt=800A/µs  
125ºC  
2.5  
2
125ºC  
25ºC  
25ºC  
Qrr  
6
1.5  
1
trr  
S
6
6
125ºC  
4
125ºC  
25ºC  
Irm  
3
3
25ºC  
2
0.5  
0
0
0
0
0
5
10  
15  
IS (A)  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
IS (A)  
Figure 18: Diode Reverse Recovery Charge and Peak  
Current vs. Conduction Current  
Figure 19: Diode Reverse Recovery Time and  
Softness Factor vs. Conduction Current  
15  
10  
5
10  
15  
12  
9
2.5  
2
Is=12A  
Is=12A  
125ºC  
125ºC  
25ºC  
8
6
4
2
0
25ºC  
1.5  
1
trr  
Qrr  
125ºC  
6
125ºC  
25ºC  
S
3
25ºC  
0.5  
0
Irm  
0
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
di/dt (A/µs)  
di/dt (A/µs)  
Figure 20: Diode Reverse Recovery Charge and Peak  
Current vs. di/dt  
Figure 21: Diode Reverse Recovery Time and  
Softness Factor vs. di/dt  
Rev 3: May 2012  
www.aosmd.com  
Page 6 of 7  
AON7700  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Rev 3: May 2012  
www.aosmd.com  
Page 7 of 7  

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