AON7702A [AOS]

30V N-Channel MOSFET; 30V N沟道MOSFET


型号：	AON7702A
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	30V N-Channel MOSFET 30V N沟道MOSFET
文件：	总6页 (文件大小：163K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON7702A

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET^TMAON7702A uses advanced trench technology

with a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

36A

< 10mΩ

< 13mΩ

100% UIS Tested

100% R_gTested

DFN 3x3A

Top View

Bottom View

Top View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

13.5

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

3.1

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

4.5

5.4

Rev 1: Feb. 2011

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Page 1 of 6

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=30V, V_GS=0V

0.5

100

I_DSS

Zero Gate Voltage Drain Current

T_J=125°C

V_DS=0V, V_GS= ±12V

V_DS=V_GSI_D=250µA

V_GS=10V, V_DS=5V

V_GS=10V, I_D=13A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

100

2.1

V_GS(th)

I_D(ON)

1.2

1.65

8.2

12.5

9.9

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=11A

mΩ

V_DS=5V, I_D=13A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

0.4

0.7

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

930

1170 1400

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

128

170

125

2.1

V_GS=0V, V_DS=0V, f=1MHz

V_GS=10V, V_DS=15V, I_D=13A

V_GS=10V, V_DS=15V, R_L=1.2Ω,

0.7

1.4

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

8.7

3.2

Q_g(4.5V) Total Gate Charge

10.5

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

2.4

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=13A, dI/dt=500A/µs

5.5

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

8.5

Q_rr

6.5

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAt ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: Feb. 2011

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Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V_DS=5V

10V

2.75V

2.5V

125°C

25°C

V_GS=2.25V

1.5

1.75

2.25

2.5

2.75

_GS(Volts)

V_DS(Volts)

Figure 2: Transfer Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

1.8

1.6

1.4

1.2

V_GS=4.5V

V_GS=10V

I_D=13A

V_GS=4.5V

I_D=11A

0.8

100 125 150 175 200

I_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

1.0E+01

I_D=13A

125°C

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

25°C

0.0

0.2

0.4

0.6

0.8

1.0

V_GS(Volts)

V_SD(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Figure 6: Body-Diode Characteristics (Note E)

Rev 1: Feb. 2011

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

1200

900

600

300

V_DS=15V

I_D=13A

C_iss

C_rss

C_oss

_DS(Volts)

_g(nC)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

200

160

120

1000.0

100.0

10.0

1.0

10µs

T_J(Max)=150°C

T_C=25°C

R_DS(ON)

limited

100µs

1ms

10ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.01

0.1

100

0.0001

0.001

0.01

0.1

V_DS(Volts)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=5.4°C/W

P_D

0.1

0.01

T_on

Single Pulse

0.00001

0.0001

0.001

0.01

0.1

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 1: Feb. 2011

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100.0

T_A=25°C

T_A=100°C

T_A=150°C

T_A=125°C

10.0

100

125

150

100

1000

Time in avalanche, t_A(µs)

T_CASE(°C)

Figure 12: Single Pulse Avalanche capability (Note

Figure 13: Power De-rating (Note F)

10000

1000

100

T_A=25°C

0.00001

0.001

0.1

1000

100

125

150

T_CASE(°C)

Pulse Width (s)

Figure 14: Current De-rating (Note F)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=75°C/W

0.1

P_D

0.01

Single Pulse

T_on

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width (s)

100

1000

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 1: Feb. 2011

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Page 5 of 6

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 1: Feb. 2011

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Page 6 of 6

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