AON7704L [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AON7704L
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总4页 (文件大小：212K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON7704

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMAON7704/L uses advanced trench technology with

a monolithically integrated Schottky diode to provide excellent

V_DS(V) = 30V

I_D= 10A

(V_GS= 10V)

R_DS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS,

load switching and general purpose applications.

_DS(ON)< 20mΩ (V_GS= 10V)

R_DS(ON)< 31mΩ (V_GS= 4.5V)

- RoHS Compliant.

- Halogen Free

DFN 3x3

Top View

Bottom View

Pin 1

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

I_DM

Continuous Drain

Current ^B

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_DSM

P_D

7.5

Power Dissipation ^B

Power Dissipation ^A

3.1

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Steady-State

R_θJC

4.5

5.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7704

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_DS=30V, V_GS=0V

0.1

I_DSS

Zero Gate Voltage Drain Current

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS= ±20V

100

V_GS(th)

I_D(ON)

V_DS=V_GSI_D=250µA

1.7

_GS=10V, V_DS=5V

_GS=10V, I_D=10A

0.4

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

mΩ

V_GS=4.5V, I_D=8A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=5V, I_D=10A

I_S=1A,V_GS=0V

0.5

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

696

200

900

1.8

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

0.6

1.2

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

12.4

6.1

2.04

2.7

2.6

6.8

Q_g(4.5V)

_GS=10V, V_DS=15V, I_D=10A

Q_gs

Q_gd

t_D(on)

t_r

V_GS=10V, V_DS=15V, R_L=1.5Ω,

_GEN=3Ω

t_D(off)

t_f

3.6

20.2

7.9

t_rr

I_F=10A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with

T_A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R _θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

G.The maximum current rating is limited by bond-wires.

Rev0: Sept 2007

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7704

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V_DS=5V

10V

8.0V

6.0V

4.5V

4.0V

3.5V

125°C

25°C

VGS=3.0V

V_DS(Volts)

V_GS(Volts)

Figure 1: On-Region Characteristics

Figure 2: Transfer Characteristics

1.6

1.4

1.2

V_GS=10V

I_D=10A

V_GS=4.5V

I_D=8A

V_GS=10V

0.8

0.6

-50 -25

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

50 75 100 125 150 175

I_D(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

150

I_D=10A

125°C

25°C

0.1

125°C

25°C

0.01

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

_SD(Volts)

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

4.5

5.5

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AON7704

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000

V_DS=15V

I_D=10A

800

600

400

200

C_iss

C_oss

C_rss

V_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

1000

100

10µs

100µs

T_J(Max)=150°C

T_A=25°C

R_DS(ON)

limited

1ms

10ms

100ms

0.1

0.01

10s

T_J(Max)=150°C

T_A=25°C

0.0001 0.001 0.01

0.1

100 1000

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased Safe

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

Operating Area (Note F)

150

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=60°C/W

0.1

P_D

0.01

T_on

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

4.5

5.5

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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