AON7820 [AOS]

20V Dual N-Channel MOSFET; 20V双N沟道MOSFET


型号：	AON7820
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	20V Dual N-Channel MOSFET 20V双N沟道MOSFET
文件：	总6页 (文件大小：297K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON7820

20V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AON7820 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_SS(ON). This device is ideal for load switch

and battery protection applications.

I_S(at V_GS=4.5V)

R_SS(ON)(at V_GS=4.5V)

R_SS(ON)(at V_GS=3.5V)

R_SS(ON)(at V_GS=2.5V)

35A

< 16mΩ

< 17mΩ

< 20mΩ

Typical ESD protection

HBM Class 2

DFN 3x3 EP

Top View

Bottom View

Top View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_S

T_C=100°C

I_SM

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_SSM

P_D

Power Dissipation ^B

Power Dissipation ^A

12.5

3.1

P_DSM

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

3.2

Rev 0: August 2011

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Page 1 of 6

AON7820

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=20V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

_DS=0V, V_GS=±10V

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

µA

V_GS(th)

I_D(ON)

V_DS=V_GSI_D=250µA

V_GS=4.5V, V_DS=5V

V_GS=4.5V, I_S=11A

0.4

0.7

1.0

18.7

13.8

15.6

mΩ

T_J=125°C

R_SS(ON)

Static Drain-Source On-Resistance

V_GS=3.5V, I_S=10A

mΩ

V_GS=2.5V, I_S=9A

V_DS=5V, I_D=11A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.58

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1375 1720 2065

V_GS=0V, V_DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

215

105

312

177

2.65

410

250

V_GS=0V, V_DS=0V, f=1MHz

V_GS=4.5V, V_DS=10V, I_S=11A

ΚΩ

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

18.2

9.5

7.6

1.65

3.7

5.4

µs

V_GS=4.5V, V_DS=10V, R_L=0.9Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=11A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

14.5

21.5

Q_rr

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAt ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: August 2011

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Page 2 of 6

AON7820

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4.5V

2.5V

3.5V

V_DS=5V

125°C

V_GS=1.5V

25°C

0.5

1.5

2.5

V_GS(Volts)

V_DS(Volts)

Fig 1: On-Region Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.8

V_GS=3.5V

I_D=10A

1.6

1.4

1.2

V_GS=2.5V

V_GS=3.5V

V_GS=2.5V

I_D=9A

V_GS=4.5V

I_D=11A

V_GS=4.5V

0.8

100

125

150

175

I_s(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

1.0E+01

I_D=11A

125°C

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 0: August 2011

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AON7820

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2000

V_DS=10V

I_D=11A

1600

1200

800

400

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

100.0

10.0

1.0

200

160

120

10µs

T_J(Max)=150°C

T_C=25°C

R_DS(ON)

limited

100µs

10µs

1ms

10ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.0001

0.001

0.01

0.1

0.01

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJC=4°C/W

P_D

0.1

T_on

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

Pulse Width (s)

0.1

100

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: August 2011

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Page 4 of 6

AON7820

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

125

150

100

125

150

T_CASE(°C)

Figure 13: Current De-rating (Note F)

Figure 12: Power De-rating (Note F)

10000

1000

100

T_A=25°C

0.00001

0.001

0.1

Pulse Width (s)

1000

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=75°C/W

0.1

P_D

0.01

Single Pulse

T_on

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: August 2011

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Page 5 of 6

AON7820

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 0: August 2011

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Page 6 of 6

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