AOP802L [AOS]

Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管


型号：	AOP802L
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	Dual N-Channel Enhancement Mode Field Effect Transistor 双N沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总4页 (文件大小：114K)
中文：	中文翻译
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AOP802

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOP802 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AOP802 is Pb-free

(meets ROHS & Sony 259 specifications). AOP802L

is a Green Product ordering option. AOP802 and

AOP802L are electrically identical.

V_DS(V) = 60V

I_D= 7.9A (V_GS= 10V)

_DS(ON)< 25mΩ (V_GS= 10V)

_DS(ON)< 30mΩ (V_GS= 4.5V)

PDIP-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

7.9

I_D

6.3

Pulsed Drain Current ^B

I_DM

3.1

T_A=25°C

T_A=70°C

P_D

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

AOP802

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_DS=48V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS= ±20V

100

V_GS(th)

I_D(ON)

_DS=V_GSI_D=250µA

2.1

V_GS=10V, V_DS=5V

_GS=10V, I_D=7.9A

17.8

32.2

19.7

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=7.1A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=5V, I_D=7.9A

I_S=1A,V_GS=0V

0.74

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1920

155

2300

0.8

Ω

_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

116

V_GS=0V, V_DS=0V, f=1MHz

0.65

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

47.6

24.2

Q_g(4.5V)

V_GS=10V, V_DS=30V, I_D=7.9A

Q_gs

Q_gd

t_D(on)

t_r

14.4

7.4

5.1

28.2

5.5

V_GS=10V, V_DS=30V, R_L=3.9Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=7.9A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The value in

any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA curve

provides a single pulse rating.

Rev3: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP802

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_DS=5V

125°C

4.5V

3.5V

25°C

V_GS=3V

1.5

2.5

3.5

_DS(Volts)

V_GS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

2.2

V_GS=10V

I_D=7.9A

1.8

1.6

1.4

1.2

V_GS=4.5V

I_D=7.1A

V_GS=10V

0.8

_D(A)

100

125

150

175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=7.9A

125°C

25°C

0.0

0.2

0.4

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOP802

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3500

V_DS=15V

I_D=7.9A

3000

2500

2000

1500

1000

500

C_iss

C_oss

C_rss

_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

R_DS(ON)

limited

T_J(Max)=150°C

T_A=25°C

10µs

100µs

1ms

0.1s

10ms

10s

T_J(Max)=150°C

T_A=25°C

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=40°C/W

P_D

0.1

T_on

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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