AOP804 [AOS]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | AOP804 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOP804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOP804 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP804 is Pb-free
(meets ROHS & Sony 259 specifications). AOP804L
is a Green Product ordering option. AOP804 and
AOP804L are electrically identical.
VDS (V) = 60V
ID = 4.7A (VGS = 10V)
R
DS(ON) < 55mΩ (VGS = 10V)
DS(ON) < 75mΩ (VGS = 4.5V)
R
D1
S1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
PDIP-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
4.7
ID
3.8
Pulsed Drain Current B
IDM
20
3.1
TA=25°C
TA=70°C
PD
W
Power Dissipation
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
37
Max
Units
°C/W
°C/W
°C/W
t ≤ 10s
50
90
40
RθJA
Steady-State
Steady-State
74
RθJL
28
Alpha & Omega Semiconductor, Ltd.
AOP804
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
VDS=48V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±20V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=4.7A
100
3
nA
V
VGS(th)
ID(ON)
1
2.3
20
A
42
75
56
77
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
V
GS=4.5V, ID=4A
DS=5V, ID=4.7A
54
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
S
V
A
IS=1A,VGS=0V
0.78
1
4
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
450
60
540
2
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
25
VGS=0V, VDS=0V, f=1MHz
1.65
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
4.3
1.6
2.2
5.1
2.6
15.9
2
10.5
5.5
nC
nC
nC
nC
ns
V
GS=10V, VDS=30V, ID=4.7A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=30V, RL=6Ω,
RGEN=3Ω
ns
ns
ns
trr
IF=4.7A, dI/dt=100A/µs
IF=4.7A, dI/dt=100A/µs
25.1
28.7
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOP804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
15
10
5
10.0V
5.0V
VDS=5V
125°C
4.5V
4.0V
25°C
VGS=3.5V
3
0
0
0
1
2
4
5
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
V
DS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
90
80
70
60
50
40
30
20
2
VGS=10V
ID=4.7A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=3.0A
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
160
140
120
100
80
ID=4.7A
125°C
125°C
25°C
25°C
60
40
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOP804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
8
VDS=30V
ID= 4.7A
600
400
200
0
Ciss
6
4
Coss
2
Crss
20
0
0
2
4
6
8
10
0
10
30
DS (Volts)
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
30
20
10
0
100µs
10µs
10ms
0.1s
1ms
10s
1s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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