AOT1404L [AOS]

40V N-Channel Rugged Planar MOSFET; 40V N沟道坚固的平面MOSFET


型号：	AOT1404L
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	40V N-Channel Rugged Planar MOSFET 40V N沟道坚固的平面MOSFET
文件：	总6页 (文件大小：431K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AOT1404L/AOB1404L

40V N-Channel Rugged Planar MOSFET

General Description

Product Summary

V_DS

40V

The AOT1404L/AOB1404L uses a robust technology that

is designed to provide efficient and reliable power

conversion even in the most demanding applications,

including motor control. With low R_DS(ON)and excellent

thermal capability this device is appropriate for high

current switching and can endure adverse operating

conditions.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

220A

< 4.2mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

220

Continuous Drain

Current ^G

I_D

T_C=100°C

157

Pulsed Drain Current ^C

I_DM

500

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

140

E_AS, E_AR

980

T_C=25°C

Power Dissipation ^B

T_C=100°C

417

P_D

208

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.3

0.36

Rev1: May 2011

www.aosmd.com

Page 1 of 6

AOT1404L/AOB1404L

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=40V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS= ±20V

V_DS=V_GS, I_D=250µΑ

V_GS=10V, V_DS=5V

V_GS=10V, I_D=20A

TO220

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

100

3.7

V_GS(th)

I_D(ON)

2.5

3.1

500

3.6

4.2

mΩ

T_J=125°C

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=10V, I_D=20A

TO263

3.3

3.9

mΩ

V_DS=5V, I_D=20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

Maximum Body-Diode Continuous Current^G

0.7

220

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

2840 3568 4300

Ω

V_GS=0V, V_DS=20V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

960

1388 1810

151

3.1

215

4.7

V_GS=0V, V_DS=0V, f=1MHz

1.5

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

_GS=10V, V_DS=20V, I_D=20A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=10V, V_DS=20V, R_L=1Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

225

287

350

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C. Maximum UIS current limited by test equipment.

D. The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current limited by package is 120A.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: May 2011

www.aosmd.com

Page 2 of 6

AOT1404L/AOB1404L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

V_DS=5V

10V

5.5V

4.5V

125°C

25°C

V_GS=4V

V_DS(Volts)

Fig 1: On-Region Characteristics (Note E)

V_GS(Volts)

Figure 2: Transfer Characteristics (Note E)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

V_GS=10V

I_D=20A

V_GS=10V

I_D(A)

100 125 150 175 200

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

_{Figure 4: On-Resistance vs. Junction Te}1_m8_perature

(Note E)

1.0E+02

I_D=20A

1.0E+01

1.0E+00

125°C

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev1: May 2011

www.aosmd.com

Page 3 of 6

AOT1404L/AOB1404L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

9000

V_DS=20V

I_D=20A

7500

6000

4500

3000

1500

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

9000

7500

6000

4500

3000

1500

1000.0

100.0

10.0

1.0

T_J(Max)=175°C

T_C=25°C

10µs

R_DS(ON)

limited

100µs

1ms

10ms

T_J(Max)=175°C

T_C=25°C

0.1

0.0

0.01

0.1

100

0.0001

0.001

0.01

Pulse Width (s)

0.1

¹0

V_DS(Volts)

Figure 9: Maximum Forward Biased Safe Operating

Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=0.36°C/W

P_D

0.1

0.01

T_on

Single Pulse

0.000001

0.00001

0.0001

0.001

Pulse Width (s)

0.01

0.1

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: May 2011

www.aosmd.com

Page 4 of 6

AOT1404L/AOB1404L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

250

200

150

100

500

400

300

200

100

T_A=25°C

T_A=150°C

T_A=100°C

T_A=125°C

100

125

150

175

100

1000

10000

Time in avalanche, t_A(ms)

Figure 12: Single Pulse Avalanche capability

(Note C)

T_CASE(°C)

Figure 13: Power De-rating (Note F)

10000

1000

100

300

250

200

150

100

T_A=25°C

100

125

150

175

1000

0.00001

0.001

0.1

Pulse Width (s)

T_CASE(°C)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

Figure 14: Current De-rating (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=60°C/W

0.1

0.01

P_D

Single Pulse

T_on

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1: May 2011

www.aosmd.com

Page 5 of 6

AOT1404L/AOB1404L

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev1: May 2011

www.aosmd.com

Page 6 of 6

相关型号：