AOT15B60D [AOS]
600V, 15A Alpha IGBT with Diode; 600V ， 15A阿尔法IGBT与二极管
| 型号： | AOT15B60D |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V, 15A Alpha IGBT with Diode |
| 文件： | 总9页 (文件大小：658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT15B60D
600V, 15A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
VCE
600V
15A
IC (TC=100°C)
VCE(sat) (TC=25°C)
1.6V
100% Eon/Eoff Tested
100% Qrr Tested
100% Short Circuit Current Tested*
Top View
TO-220
C
G
E
C
E
G
AOT15B60D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
V CE
AOT15B60D
Units
Collector-Emitter Voltage
Gate-Emitter Voltage
600
±20
30
V
V
V GE
TC=25°C
Continuous Collector
Current
I C
A
TC=100°C
15
Pulsed Collector Current, Limited by TJmax
I CM
I LM
60
A
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
60
30
15
60
TC=25°C
Continuous Diode
I F
A
A
TC=100°C
Forward Current
Diode Pulsed Current, Limited by TJmax
I FM
Short circuit withstanding time VGE = 15V, VCE
t SC
10
µs
≤ 400V, Delay between short circuits ≥ 1.0s,
TC=150°C
TC=25°C
167
83.3
P D
W
°C
TC=100°C
Power Dissipation
Junction and Storage Temperature Range
T J , T STG
-55 to 175
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T L
300
°C
Thermal Characteristics
Parameter
Symbol
AOT15B60D
Units
°C/W
°C/W
°C/W
R θ
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
* VCE equal to 50V
65
0.9
1.5
JA
R θ
JC
R θ
JC
Rev1: Nov 2012
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Page 1 of 9
AOT15B60D
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
V CE(sat)
IC=1mA, VGE=0V, TJ=25°C
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
600
-
1.6
1.85
1.99
1.43
1.39
1.32
5.8
-
-
V
V
TJ=25°C
-
-
-
-
-
-
-
-
-
-
-
-
1.8
VGE=15V, IC=15A
TJ=125°C
TJ=175°C
TJ=25°C
-
-
1.72
V F
VGE=0V, IC=15A
VCE=VGE, IC=1mA
VCE=600V, VGE=0V
Diode Forward Voltage
V
V
TJ=125°C
TJ=175°C
-
-
V GE(th)
I CES
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
-
TJ=25°C
10
300
3000
±100
-
TJ=125°C
TJ=175°C
-
µA
-
I GES
g FS
VCE=0V, VGE=±20V
VCE=20V, IC=15A
Gate-Emitter leakage current
Forward Transconductance
-
nA
S
7.7
DYNAMIC PARAMETERS
C ies
C oes
C res
Q g
Input Capacitance
-
-
-
-
-
-
1290
97
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
VGE=0V, VCE=25V, f=1MHz
VGE=15V, VCE=480V, IC=15A
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3.1
25.4
9.5
Q ge
Q gc
Gate to Emitter Charge
Gate to Collector Charge
8.3
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
I C(SC)
VGE=15V, VCE=400V, RG=20Ω
-
-
74
-
-
A
VGE=0V, VCE=0V, f=1MHz
R g
Gate resistance
2.4
Ω
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(on)
t r
t D(off)
t f
Turn-On DelayTime
-
-
-
-
-
-
-
-
-
-
21
19
-
-
-
-
-
-
-
-
-
-
ns
ns
Turn-On Rise Time
TJ=25°C
VGE=15V, VCE=400V, IC=15A,
RG=20Ω,
Turn-Off Delay Time
73
ns
Turn-Off Fall Time
10
ns
Parasitic Ιnductance=100nH
E on
E off
E total
t rr
Turn-On Energy
0.42
0.11
0.53
196
0.48
5.8
mJ
mJ
mJ
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
TJ=25°C
Q rr
I rm
µC
IF=15A,dI/dt=200A/µs,VCE=400V
A
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t D(on)
t r
t D(off)
t f
Turn-On DelayTime
-
-
-
-
-
-
-
-
-
-
19
19
-
-
-
-
-
-
-
-
-
-
ns
ns
Turn-On Rise Time
TJ=175°C
VGE=15V, VCE=400V, IC=15A,
RG=20Ω,
Turn-Off Delay Time
95
ns
Turn-Off Fall Time
10
ns
E on
E off
E total
t rr
Turn-On Energy
0.58
0.2
0.78
235
1.1
8.5
mJ
mJ
mJ
Parasitic Inductance=100nH
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
TJ=175°C
Q rr
I rm
µC
IF=15A,dI/dt=200A/µs,VCE=400V
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Nov 2012
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Page 2 of 9
AOT15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
70
60
50
40
30
20
10
0
20V
20V
17V
15V
17V
80
15V
13V
60
13V
40
11V
11V
20
9V
VGE= 7V
9V
6
VGE=7V
0
0
1
2
3
4
5
7
0
1
2
3
4
5
6
7
VCE(V)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
Fig 2: Output Characteristic
(Tj=175°C )
50
40
30
20
10
0
70
60
50
40
30
20
10
0
VCE=20V
-40°C
-40°C
175°C
25°C
175°C
25°C
4
7
10
13
16
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
VGE(V)
Fig 3: Transfer Characteristic
Fig 4: Diode Characteristic
4
3
2
1
0
50
40
30
20
10
0
100
80
60
40
20
0
IC=30A
IC=15A
IC=7.5A
0
25
50
75
100 125 150 175 200
5
8
11
VGE (V)
Fig 6: VGE vs. Short Circuit Time
(VCE=400V,TC=25°C
14
17
20
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
)
Rev1: Nov 2012
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AOT15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VCE=480V
IC=15A
Cies
Coes
6
Cres
3
0
1
0
5
10
15
20
25
30
0
5
10
15
20
VCE(V)
25
30
35
40
Qg(nC)
Fig 7: Gate-Charge Characteristics
Fig 8: Capacitance Characteristic
100
10
1
10
100
1,000
VCE (V)
Fig 10: Reverse Bias SOA
(Tj=175°C,V GE=15V)
180
150
120
90
30
25
20
15
10
5
60
30
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TCASE(°C)
Fig 12: Current De-rating
TCASE(°C)
Fig 11: Power Disspation as a Function of Case
Rev1: Nov 2012
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AOT15B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
10,000
1,000
100
10
Td(off)
Tf
Td(off)
Tf
Td(on)
Tr
Td(on)
Tr
1
1
0
5
10
15
20
25
30
35
0
50
100
Rg (Ω)
150
200
250
IC (A)
Figure 14: Switching Time vs. Rg
(Tj=175°C,V GE=15V,VCE=400V,IC=15A)
Figure 13: Switching Time vs. IC
(Tj=175°C,V GE=15V,VCE=400V,Rg=20Ω)
1000
100
10
8
7
6
5
4
3
2
Td(off)
Tf
Td(on)
Tr
1
0
30
60
TJ (°C)
Figure 16: VGE(TH) vs. Tj
90
120
150
0
50
100
TJ (°C)
150
200
Figure 15: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=15A,Rg=20Ω)
Rev1: Nov 2012
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Page 5 of 9
AOT15B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
1.6
1.2
0.8
0.4
0
1.5
1.2
0.9
0.6
0.3
0.0
Eoff
Eoff
Eon
Eon
Etotal
Etotal
0
5
10
15
IC (A)
20
25
30
35
0
50
100
150
Rg (Ω)
200
250
Figure 17: Switching Loss vs. IC
Figure 18: Switching Loss vs. Rg
(Tj=175°C,V GE=15V,VCE=400V,IC=15A)
(Tj=175°C,V GE=15V,VCE=400V,Rg=20Ω)
1
0.8
0.6
0.4
0.2
0
1.0
Eoff
Eoff
Eon
Eon
0.8
0.6
0.4
0.2
0.0
Etotal
Etotal
0
25
50
75
100 125 150 175 200
TJ (°C)
200
250
300
350
VCE (V)
400
450
500
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=15A,Rg=20Ω)
Figure 20: Switching Loss vs. VCE
(Tj=175°C,V GE=15V,IC=15A,Rg=20Ω)
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AOT15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.8
1.4
1
15A
10A
VCE=600V
5A
IF=1A
VCE=400V
0.6
0.2
0
25
50
75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
Temperature (°C )
Temperature (°C )
Fig 22: Diode Forward voltage vs. Junction
Temperature
Fig 21: Diode Reverse Leakage Current vs.
Junction Temperature
1600
1400
1200
1000
800
600
400
200
0
80
70
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
16
14
12
10
8
175°C
175°C
Trr
Qrr
6
25°C
175°C
S
4
25°C
175°C
2
Irm
25°C
25°C
0
0
0
5
10
15
20
IS (A)
25
30
35
0
5
10
15
20
IF(A)
25
30
35
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
(VGE=15V,VCE=400V, di/dt=200A/µs)
300
250
200
150
100
50
20
1600
1400
1200
1000
800
600
400
200
0
80
70
60
50
40
30
20
10
0
175°C
175°C
25°C
16
12
Qrr
S
8
4
0
Trr
175°C
25°C
175°C
25°C
25°C
Irm
0
100 200 300 400 500 600 700 800 900
100 200 300 400 500 600 700 800 900
di/dt (A/µS)
di/dt (A/µS)
Fig 25: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Fig 26: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
(VGE=15V,VCE=400V,IF=15A)
Rev1: Nov 2012
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Page 7 of 9
AOT15B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.9°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT
10
1
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
PD
Single Pulse
0.01
0.001
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 28: Normalized Maximum Transient Thermal Impedance for Diode
Rev1: Nov 2012
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Page 8 of 9
AOT15B60D
Rev1: Nov 2012
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Page 9 of 9
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