AOT1N60 [AOS]
1.3A, 600V N-Channel MOSFET; 1.3A ， 600V N沟道MOSFET
| 型号： | AOT1N60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 1.3A, 600V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT1N60
1.3A, 600V N-Channel MOSFET
formerly engineering part number AOT9600
General Description
Features
The AOT1N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
VDS (V) = 700V @ 150°C
ID = 1.3A
RDS(ON) < 9Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
Top View
D
TO-220
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B
Pulsed Drain Current C
Avalanche Current C
600
±30
1.3
0.8
4
V
V
VGS
TC=25°C
TC=100°C
ID
A
IDM
IAR
1.0
15
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
30
5
41.7
mJ
V/ns
W
PD
Power Dissipation B
Derate above 25oC
0.33
W/ C
o
TJ, TSTG
Junction and Storage Temperature Range
-50 to 150
°C
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
RθJA
Typical
Maximum
Units
Maximum Junction-to-Ambient A
Maximum Case-to-Sink A
°C/W
55
65
0.5
3
RθCS
-
°C/W
°C/W
Maximum Junction-to-Case D,F
RθJC
2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
V
V
BVDSS
Drain-Source Breakdown Voltage
700
0.6
BVDSS
Breakdown Voltage Temperature
Coefficient
V/ oC
ID=250µA, VGS=0V
/∆TJ
VDS=600V, VGS=0V
1
10
100
5
IDSS
Zero Gate Voltage Drain Current
µA
VDS=480V, TJ=125°C
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
nA
V
VDS=VGS, ID=250µA
3
4.1
7.5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=0.65A
VDS=40V, ID=0.65A
IS=1A, VGS=0V
9
Ω
S
0.9
VSD
0.65
1
1
4
V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
100
11
130
14.5
1.8
160
17.5
2.2
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.4
2.8
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=480V, ID=1A
VGS=10V, VDS=300V, ID=1A,
3.5
5.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.1
1.3
3.1
10
8
2
nC
nC
nC
ns
ns
ns
ns
4
12
8
6.7
20
RG=25Ω
tD(off)
tf
25
15
137
0.76
11.5
114
0.63
trr
IF=1.3A,dI/dt=100A/µs,VDS=100V
IF=1.3A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
=150°C in a TO220 package, using junction-to-casethermal resistance, andismoreuseful in setting
B. The power dissipation PD is based on TJ(MAX)
the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev0: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.0
10
10V
6.5V
VDS=40V
-55°C
25°C
8
1.5
6V
1.0
0.5
0.0
1
125°C
VGS=5.5V
0.1
0
5
10
15
20
25
30
2
4
6
10
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
14
2.5
2.0
1.5
1.0
0.5
0.0
13
12
11
10
9
VGS=10V
ID=0.5A
VGS=10V
8
7
0.0
0.5
1.0
1.5
2.0
2.5
-100
-50
0
50
100
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.0E+01
1.0E+00
1.1
1
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.9
25°C
0.8
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
-100
-50
0
50
Temperature (oC)
Figure 5: Break Down vs. Junction Temperature
100
150
200
V
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1000
100
10
VDS=480
ID=1A
Ciss
6
Coss
3
Crss
1
0
0
1
10
100
0
2
4
6
8
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10.0
1.0
0.1
0.0
1.4
10µs
1.2
1.0
0.8
0.6
0.4
0.2
0.0
RDS(ON)
limited
100µs
10ms
0.1s
DC
1ms
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0
25
50
75
100
125
150
V
DS (Volts)
T
CASE (°C)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT1N60 (Note F)
Figure 10: Current De-rating (Note B)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=3°C/W
T
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT1N60 (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Isd
Vds -
Ig
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
AOT20S60L
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
AOS
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