AOT20N25L [AOS]
Transistor;
| 型号： | AOT20N25L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT20N25
250V,20A N-Channel MOSFET
General Description
Product Summary
VDS
300V@150℃
20A
The AOT20N25 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.17Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT20N25L
Top View
TO-220
D
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT20N25
Units
Drain-Source Voltage
Gate-Source Voltage
250
±30
20
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
14
A
Pulsed Drain Current C
Avalanche Current C
IDM
51
4.5
IAS
A
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
EAS
dv/dt
608
mJ
V/ns
W
W/ oC
5
208
PD
Power Dissipation B
Derate above 25oC
1.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOT20N25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
0.6
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
Rev0: Oct 2011
www.aosmd.com
Page 1 of 5
AOT20N25
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
250
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
300
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.25
VDS=250V, VGS=0V
VDS=200V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=10A
VDS=40V, ID=10A
IS=1A,VGS=0V
3.2
3.8
0.14
16
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.17
Ω
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
20
51
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1028
167
11
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.9
3.9
5.9
25
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
20
5.7
8
nC
nC
nC
ns
ns
ns
VGS=10V, VDS=200V, ID=20A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
27
31
25
179
1.6
VGS=10V, VDS=125V, ID=20A,
Turn-On Rise Time
RG=25Ω
D(off)
tf
Turn-Off Fall Time
trr
IF=20A,dI/dt=100A/µs,VDS=100V
IF=20A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2011
www.aosmd.com
Page 2 of 5
AOT20N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
30
VDS=40V
-55°C
10V
25
20
15
6.5V
125°C
6V
10
25°C
5
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
0.30
0.25
0.20
0.15
0.10
0.05
0.00
3
VGS=10V
ID=10A
2.5
2
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
5
10
15
ID (A)
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
125°C
1E+00
1E-01
1E-02
1E-03
1E-04
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.2
0.4
0.6
0.8
1.0
TJ (°C)
VSD (Volts)
Figure 5:Break Down vs. Junction Temparature
Figure 6: Body-Diode Characteristics (Note E)
Rev0: Oct 2011
www.aosmd.com
Page 3 of 5
AOT20N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
12
9
VDS=200V
ID=20A
Ciss
1000
100
10
Coss
6
Crss
3
1
0
0.1
1
10
100
0
5
10
15
20
25
30
35
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
25
10µs
RDS(ON)
limited
20
15
10
5
100µs
10
1
1ms
DC
10ms
0.1
0.01
TJ(Max)=150°C
0
0.1
1
10
100
1000
0
25
50
75
100
125
150
TCASE (°C)
VDS (Volts)
Figure 9: Current De-rating (Note B)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOT20N25 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=0.6°C/W
0.1
0.01
PD
Ton
Single Pulse
0.0001
T
0.001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT20N25 (Note F)
Rev0: Oct 2011
www.aosmd.com
Page 4 of 5
AOT20N25
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: Oct 2011
www.aosmd.com
Page 5 of 5
相关型号：
AOT20S60L
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
AOS
©2020 ICPDF网 联系我们和版权申明