AOTF10T60P [AOS]
RoHS and Halogen Free Compliant;
| 型号： | AOTF10T60P |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | RoHS and Halogen Free Compliant |
| 文件： | 总7页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT10T60P/AOB10T60P/AOTF10T60P
600V,10A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
VDS @ Tj,max
IDM
700V
40A
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
RDS(ON),max
Qg,typ
< 0.7Ω
26nC
3.5µJ
Eoss @ 400V
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer,
and Telecom
Top View
TO-263
D2PAK
D
TO-220F
TO-220
D
D
S
G
S
S
D
D
G
G
G
S
AOT10T60P
AOB10T60P
AOTF10T60P
Orderable Part Number
AOT10T60PL
Package Type
TO-220 Green
Form
Tube
Minimum Order Quantity
1000
AOB10T60PL
AOTF10T60P
AOTF10T60PL
TO-263 Green
TO-220F Pb Free
TO-220F Green
Tape & Reel
Tube
800
1000
1000
Tube
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
10*
6.6*
40
V
V
TC=25°C
10
10*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
ID
TC=100°C
A
6.6
6.6*
IDM
IAR
10
A
EAR
EAS
50
mJ
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt J
TC=25°C
480
50
15
dv/dt
V/ns
W
W/°C
°C
208
1.7
43
0.3
33
PD
Power Dissipation B
Derate above 25°C
0.26
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
0.6
--
--
°C/W
°C/W
Maximum Junction-to-Case
2.9
3.8
* Drain current limited by maximum junction temperature.
Rev.2.0: March 2014
www.aosmd.com
Page 1 of 7
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
V
700
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
V/ oC
ID=250µA, VGS=0V
0.56
VDS=600V, VGS=0V
1
10
IDSS
Zero Gate Voltage Drain Current
µA
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=5A
VDS=40V, ID=5A
IS=1A,VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
5
nA
V
3
4.3
0.58
8.8
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.7
Ω
S
VSD
0.74
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current C
10
40
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
1595
56
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related H
Co(er)
Co(tr)
42
74
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
11
pF
Ω
1.7
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
26
8.1
8.2
42
40
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=10A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=300V, ID=10A,
Turn-On Rise Time
54
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
52
Turn-Off Fall Time
24
trr
IF=10A,dI/dt=100A/µs,VDS=100V
IF=10A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
497
7.3
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX)
.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2014
www.aosmd.com
Page 2 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
20
VDS=40V
-55°C
10V
16
12
8
7V
125°C
6.5V
6V
4
25°C
VGS=5.5V
15
0
0.1
0
5
10
20
25
30
2
4
6
8
10
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
3
2
1.6
1.2
0.8
0.4
0
2.5
2
VGS=10V
ID=5A
VGS=10V
1.5
1
0.5
0
-100
0
5
10
15
20
25
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1.3
1.2
1.1
1
125°C
0.9
0.8
0.7
25°C
-100
-50
0
50
100
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0: March 2014
www.aosmd.com
Page 3 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
Ciss
VDS=480V
ID=10A
1000
100
10
Coss
6
Crss
3
0
1
0
8
16
Qg (nC)
24
32
40
0.1
1
10
100
1000
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
7.5
6
15
12
9
4.5
3
Eoss
6
1.5
0
3
0
0
100
200
300
400
500
600
0
25
50
75
100
125
150
VDS (Volts)
Figure 9: Coss stored Energy
TCASE (°C)
Figure 10: Current De-rating (Note F)
Rev.2.0: March 2014
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Page 4 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
100µs
100µs
1ms
1ms
1
DC
10ms
DC
10ms
0.1s
1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
1
10
100
1000
VDS(Volts)
VDS(Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for TO-220/TO-263 (Note F)
Figure 12: Maximum Forward Biased Safe Operating
Area for TO-220F Pb Free (Note F)
100
10
10µs
RDS(ON)
limited
100µs
1
1ms
10ms
DC
0.1s
1s
0.1
0.01
TJ(Max)=150°C
TC=25°C
1
10
100
1000
VDS(Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for TO-220F Green (Note F)
Rev.2.0: March 2014
www.aosmd.com
Page 5 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=0.6°C/W
1
0.1
PD
Single Pulse
0.01
0.001
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220/TO-263 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Ton
Single Pulse
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3.8°C/W
R
0.1
PD
0.01
0.001
Single Pulse
0.001
Ton
T
1E-05
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)
Rev.2.0: March 2014
www.aosmd.com
Page 6 of 7
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev.2.0: March 2014
www.aosmd.com
Page 7 of 7
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