AOU404 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AOU404
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总5页 (文件大小：70K)
中文：	中文翻译
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AOU404

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU404 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

Product AOU404 is Pb-free (meets ROHS & Sony

259 specifications). AOU404L is a Green Product

ordering option. AOU404 and AOU404L are

electrically identical.

V_DS(V) = 75V

I_D= 10 A (V_GS= 20V)

R_DS(ON)< 130 mΩ (V_GS= 20V) @ 5A

R_DS(ON)< 140 mΩ (V_GS= 10V)

R_DS(ON)< 165 mΩ (V_GS= 4.5V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±25

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Steady-State

R_θJA

115

140

°C/W

Maximum Junction-to-Case ^B

R_θJC

4.5

7.5

°C/W

Alpha & Omega Semiconductor, Ltd.

AOU404

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=10mA, V_GS=0V

V_DS=60V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS=±20V

100

V_GS(th)

I_D(ON)

V_DS=V_GS, I_D=250µA

2.4

V_GS=10V, V_DS=5V

_GS=20V, I_D=5A

100

180

105

120

130

220

140

165

mΩ

T_J=125°C

R_DS(ON)

Static Drain-Source On-Resistance

mΩ

V_GS=10V, I_D=5A

V_GS=4.5V, I_D=2A

V_DS=5V, I_D=10A

I_S=1A, V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.79

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

293

350

Ω

V_GS=0V, V_DS=30V, f=1MHz

V_GS=0V, V_DS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

2.2

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

5.2

2.46

6.5

3.5

Q_g(4.5V)

Q_gs

Q_gd

t_D(on)

t_r

_GS=10V, V_DS=37.5V, I_D=5A

1.34

4.6

2.3

14.7

1.7

V_GS=10V, V_DS=37.5V, R_L=7.5Ω,

_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=5A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device in a still air environment with T _A=25°C.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C.

D. The R _θJAis the sum of the thermal impedence from junction to case R _θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T_J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

Rev2: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOU404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_DS=5V

125°C

4.5V

25°C

V_GS=4V

2.5

3.5

V_GS(Volts)

4.5

_DS(Volts)

Figure 2: Transfer Characteristics

Fig 1: On-Region Characteristics

220

200

180

160

140

120

100

2.2

V_GS=20V, 5A

V_GS=10V, 5A

1.8

1.6

1.4

1.2

V_GS=4.5V

V_GS=4.5V, 2A

V_GS=10V

V_GS=20V

0.8

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

I_D(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

300

260

220

180

140

100

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=5A

125°C

25°C

0.0

0.2

0.4

0.6

V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOU404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

400

350

300

250

200

150

100

V_DS=37.5V

I_D=5A

C_iss

C_oss

C_rss

_DS(Volts)

_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

200

160

120

T_J(Max)=175°C, T_A=25°C

10µs

T_J(Max)=175°C

T_A=25°C

10.0

DS(ON)

100µs

limited

1ms

10ms

1.0

0.1

0.0001

0.001

0.01

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=7.5°C/W

P_D

0.1

T_on

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

Alpha & Omega Semiconductor, Ltd.

AOU404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

L ⋅ I_D

t_A

BV −V_DD

T_A=25°C

T_CASE(°C)

Figure 13: Power De-rating (Note B)

100

125

150

175

0.00001

0.0001

Time in avalanche, t_A(s)

Figure 12: Single Pulse Avalanche capability

0.001

_CASE(°C)

Figure 14: Current De-rating (Note B)

100

125

150

175

Alpha & Omega Semiconductor, Ltd.

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