AOU405 [AOS]

P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管


型号：	AOU405
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	P-Channel Enhancement Mode Field Effect Transistor P沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总5页 (文件大小：108K)
中文：	中文翻译
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AOU405

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU405 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the TO-251 package, this device is well suited for

high current load applications. Standard Product

AOU405 is Pb-free (meets ROHS & Sony 259

specifications). AOU405L is a Green Product

ordering option. AOU405 and AOU405L are

electrically identical.

V_DS(V) = -30V

I_D= -18A (V_GS= -10V)

R_DS(ON)< 34mΩ (V_GS= -10V)

R_DS(ON)< 60mΩ (V_GS= -4.5V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-18

T_A=25°C ^G

T_A=100°C ^G

I_D

-18

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-40

-18

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

1.8

2.5

Alpha & Omega Semiconductor, Ltd.

AOU405

Electrical Characteristics (T=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-30

V_DS=-24V, V_GS=0V

-0.003

-1

I_DSS

Zero Gate Voltage Drain Current

µA

-5

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS=±20V

±100

-2.4

V_GS(th)

I_D(ON)

V_DS=V_GSI_D=-250µA

-1.2

-40

-2

V_GS=-10V, V_DS=-5V

V_GS=-10V, I_D=-18A

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=-4.5V, I_D=-10A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

_DS=-5V, I_D=-18A

I_S=-1A,V_GS=0V

-0.76

-1

Maximum Body-Diode Continuous Current

-18

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

920

190

122

3.6

1100

4.5

Ω

V_GS=0V, V_DS=-15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Q_g(4.5V)

Q_gs

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

18.7

9.7

2.54

5.4

11.7

_GS=-10V, V_DS=-15V, I_D=-18A

Q_gd

t_D(on)

t_r

t_D(off)

t_f

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=-10V, V_DS=-15V,

R_L=0.82Ω, R_GEN=3Ω

I_F=-18A, dI/dt=100A/µs

t_rr

21.4

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T_J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA

curve provides a single pulse rating.

I. Revision 0: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOU405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-10V

V_DS=-5V

-6V

-4.5V

-4V

-3.5V

125°C

V_GS=-3V

25°C

3.5

0.5

1.5

2.5

4.5

-V_DS(Volts)

-V_GS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

100

1.60

1.40

1.20

1.00

0.80

V_GS=-4.5V

I_D=-10A

V_GS=-4.5V

V_GS=-10V

I_D=-18A

V_GS=-10V

100

125

150

175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

-I_D(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

120

100

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

1.0E-06

I_D=-18A

125°C

25°C

0.0

0.2

0.4

-V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

-V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOU405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

1250

1000

750

500

250

V_DS=-15V

I_D=-18A

C_iss

C_oss

C_rss

-Q_g(nC)

-V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

400

300

200

100

T_J(Max)=175°C, T_A=25°C

T_J(Max)=175°C

T_A=25°C

10µs

R_DS(ON

1ms

)

10ms

0.1

100

0.0001 0.001

0.01

0.1

100

-V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=2.5°C/W

0.1

P_D

T_on

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

Alpha & Omega Semiconductor, Ltd.

AOU405

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

L ⋅ I_D

t_A

BV −V_DD

T_A=25°C

0.00001

0.0001

0.001

T_CASE(°C)

Figure 13: Power De-rating (Note B)

100

125

150

175

Time in avalanche, t _A(s)

Figure 12: Single Pulse Avalanche capability

_CASE(°C)

Figure 14: Current De-rating (Note B)

100

125

150

175

Alpha & Omega Semiconductor, Ltd.

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