AOU408 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AOU408
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总5页 (文件大小：68K)
中文：	中文翻译
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AOU408

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOU408 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard Product AOU408 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU408L is a Green Product ordering option.

AOU408 and AOU408L are electrically identical.

V_DS(V) = 105V

I_D= 40 A (V_GS=10V)

R_DS(ON)< 28 mΩ (V_GS=10V) @ 20A

R_DS(ON)< 31 mΩ (V_GS= 6V)

TO-251

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

105

V_GS

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

100

200

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Steady-State

R_θJA

°C/W

Maximum Junction-to-Case ^B

R_θJC

1.5

°C/W

Alpha & Omega Semiconductor, Ltd.

AOU408

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=10mA, V_GS=0V

105

V_DS=84V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS=±25V

V_DS=V_GS, I_D=250µA

V_GS=10V, V_DS=5V

100

V_GS(th)

I_D(ON)

2.5

3.2

100

_GS=10V, I_D=20A

21.5

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=6V, I_D=20A

V_DS=5V, I_D=20A

I_S=1A, V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.73

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

2038

204

2445

Ω

_GS=0V, V_DS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

1.3

1.56

SWITCHING PARAMETERS

Q_g(10V)

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

38.5

V_GS=10V, V_DS=50V, I_D=20A

12.7

8.2

V_GS=10V, V_DS=50V, R_L=2.7Ω,

R_GEN=3Ω

t_D(off)

t_f

31.5

11.2

59.6

161

t_rr

I_F=20A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device in a still air environment with T _A=25°C.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C.

D. The R _θJAis the sum of the thermal impedence from junction to case R _θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

Rev2: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOU408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

10V

V_DS=5V

125°C

25°C

V_GS=4.5V

2.5

3.5

V_GS(Volts)

4.5

V_DS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

2.4

2.2

V_GS=10V, 20A

1.8

1.6

1.4

1.2

V_GS=6V

V_GS=6V,20A

V_GS=10V

0.8

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

I_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

I_D=20A

125°C

25°C

0.0

0.2

0.4

0.6

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOU408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V_DS=50V

I_D=20A

C_iss

C_oss

C_rss

100

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

1000

100

300

200

100

T_J(Max)=175°C, T_A=25°C

T_J(Max)=175°C

T_A=25°C

100µs

1ms, DC

R_DS(ON)

limited

0.1

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

V_DS(Volts)

Figure 9: Maximum Forward Biased Safe Operating

Area (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJC.R_θJC

R_θJC=1.5°C/W

P_D

0.1

T_on

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

0.1

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOU408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150

100

T_A=25°C

T_A=150°C

0.000001

0.00001

Time in avalanche, t_A(s)

Figure 12: Single Pulse Avalanche capability

0.0001

0.001

_CASE(°C)

Figure 13: Power De-rating (Note B)

100

125

150

175

_CASE(°C)

Figure 14: Current De-rating (Note B)

100

125

150

175

Alpha & Omega Semiconductor, Ltd.

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