首页 |元器件品牌

AOU412 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
AOU412
型号： AOU412
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总5页 (文件大小：69K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AOU412  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOU412 uses advanced trench technology to  
provide excellent RDS(ON), low gate chargeand low  
gate resistance. This device is ideally suited for use  
as a high side switch in CPU core power conversion.  
Standard Product AOU412 is Pb-free (meets ROHS  
& Sony 259 specifications). AOU412L is a Green  
Product ordering option. AOU412 and AOU412L are  
electrically identical.  
VDS (V) = 30V  
ID = 85A (VGS = 10V)  
R
DS(ON) < 7.5mΩ (VGS = 10V)  
DS(ON) < 11mΩ (VGS = 4.5V)  
R
TO-251  
D
Top View  
Drain  
Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current B,G  
±20  
85  
V
A
TC=25°C G  
TC=100°C B  
ID  
65  
IDM  
IAR  
EAR  
Pulsed Drain Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
200  
30  
A
120  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
100  
PD  
W
50  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
RθJA  
Typ  
Max  
Units  
Steady-State  
Steady-State  
105  
1
125  
1.5  
°C/W  
°C/W  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
AOU412  
Electrical Characteristics (T =25°C unless otherwise noted)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
V
DS=24V, VGS=0V  
0.005  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS= ±20V  
VDS=VGS ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=20A  
100  
2.5  
nA  
V
VGS(th)  
ID(ON)  
1.5  
85  
2.15  
A
5.7  
8.4  
8.7  
60  
7.5  
10  
11  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
mΩ  
S
VGS=4.5V, ID=20A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
V
DS=5V, ID=20A  
IS=1A,VGS=0V  
0.72  
1
V
Maximum Body-Diode Continuous Current  
85  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1320 1600  
533  
pF  
pF  
pF  
Ω
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
154  
VGS=0V, VDS=0V, f=1MHz  
0.95  
1.2  
SWITCHING PARAMETERS  
Qg(10V)  
Qg(4.5V)  
Qgs  
Total Gate Charge  
26  
13.3  
3.2  
6.6  
7.2  
12.5  
22  
32  
nC  
nC  
nC  
nC  
ns  
Total Gate Charge  
16.2  
V
GS=4.5V, VDS=15V, ID=20A  
Gate Source Charge  
Qgd  
Gate Drain Charge  
tD(on)  
tr  
tD(off)  
tf  
Turn-On DelayTime  
10  
18  
33  
9
VGS=10V, VDS=15V, RL=0.75Ω,  
RGEN=3Ω  
Turn-On Rise Time  
ns  
Turn-Off DelayTime  
ns  
Turn-Off Fall Time  
6
ns  
trr  
IF=20A, dI/dt=100A/µs  
IF=20A, dI/dt=100A/µs  
29.7  
29  
36  
36  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
nC  
Qrr  
A: The value of RθJA is measured with the device in a still air environment with TA =25°C.  
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
D
dissipation limit for cases where additional heatsinking is used.  
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.  
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a  
maximum junction temperature of TJ(MAX)=175°C.  
G. The maximum current rating is limited by bond-wires.  
Rev3: August 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
Alpha & Omega Semiconductor, Ltd.  
AOU412  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
10V  
4.0V  
VDS=5V  
125°C  
3.5V  
25°C  
VGS=3V  
0
1
2
3
4
5
1.5  
2
2.5  
3
3.5  
4
4.5  
VDS (Volts)  
VGS(Volts)  
Fig 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
12  
11  
10  
9
1.8  
1.6  
1.4  
1.2  
1
ID=20A  
VGS=10V  
VGS=4.5V  
VGS=4.5V  
8
7
VGS=10V  
6
5
4
0.8  
0
10  
20  
30  
40  
50  
60  
0
25  
50  
75  
100  
125  
150  
175  
ID (A)  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
20  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
16  
12  
8
ID=20A  
25°C  
125°C  
25°C  
4
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
V
SD (Volts)  
VGS (Volts)  
Figure 6: Body-Diode Characteristics  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
AOU412  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
2400  
10  
8
VDS=15V  
ID=20A  
2000  
1600  
1200  
800  
400  
0
Ciss  
6
4
Coss  
2
Crss  
0
0
5
10  
15  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
20  
25  
30  
0
5
10  
15  
DS (Volts)  
20  
25  
30  
V
Figure 8: Capacitance Characteristics  
1000  
100  
10  
1000  
800  
600  
400  
200  
0
TJ(Max)=175°C  
TA=25°C  
RDS(ON)  
limited  
10µs  
1ms  
100µs  
10ms  
DC  
TJ(Max)=175°C  
TA=25°C  
1
0.1  
1E-05 1E-04 0.001 0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Pulse Width (s)  
VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note F)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse  
TJ,PK=TA+PDM.ZθJC.RθJA  
RθJC=1.5°C/W  
1
0.1  
PD  
Ton  
T
Single Pulse  
0.0001  
0.01  
0.00001  
0.001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
0.1  
1
10  
100  
Alpha & Omega Semiconductor, Ltd.  
AOU412  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
TA=25°C  
L⋅ ID  
tA  
=
BV −VDD  
0.00001  
0.0001  
Time in avalanche, tA (s)  
Figure 12: Single Pulse Avalanche capability  
0.001  
0.01  
0
25  
50  
75  
TCASE (°C)  
Figure 13: Power De-rating (Note B)  
100  
125  
150  
175  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
TCASE (°C)  
Figure 14: Current De-rating (Note B)  
100  
125  
150  
175  
Alpha & Omega Semiconductor, Ltd.  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明