AOU436 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOU436 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOU436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU436 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU436 is Pb-free
(meets ROHS & Sony 259 specifications). AOU436L
is a Green Product ordering option. AOU436 and
AOU436L are electrically identical.
VDS (V) = 30V
ID = 57A (VGS = 10V)
RDS(ON) < 8.5mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,
±20
57
V
A
TC=25°C
TC=100°C B
ID
40
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
100
30
A
143
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
100
2
125
3
°C/W
°C/W
RθJL
Alpha & Omega Semiconductor, Ltd.
AOU436
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
1
1.8
VGS=10V, VDS=5V
VGS=10V, ID=20A
85
A
5.4
8.1
9.8
88
8.5
9.7
14
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
S
V
A
IS=1A,VGS=0V
0.71
1
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1520
306
1825
0.7
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=100kHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
214
VGS=0V, VDS=0V, f=1MHz
0.47
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
31.9
16.2
5
39
20
nC
nC
nC
nC
ns
V
GS=4.5V, VDS=15V, ID=20A
Qgd
9.6
tD(on)
tr
tD(off)
tf
7
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
11.6
24.2
7.7
ns
R
ns
ns
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
trr
23.8
15.7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
0
60
50
40
30
20
10
0
10V
VDS=5V
4V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
V
DS (Volts)
VGS(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
14
12
10
8
1.8
ID=20A
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=4.5V
VGS=10V
6
4
0
10
20
ID (A)
30
40
0.8
0
25
50
75
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
12
8
125°C
25°C
25°C
4
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=30V
ID=20A
2000
1500
1000
500
0
Ciss
6
4
Coss
Crss
2
0
0
5
10
15
20
25
30
35
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
100
80
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
DC
60
TJ(Max)=175°C
TA=25°C
40
0.1
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
J,PK=Tc+PDM.ZθJc.RθJc
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
60
50
40
30
20
10
L ⋅ ID
tA =
BV −VDD
TA=25°C
0
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
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