AOU438L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | AOU438L |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总5页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOU438
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOU438 is Pb-free (meets ROHS
& Sony 259 specifications). AOU438L is a Green
Product ordering option. AOU438 and AOU438L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 4.5mΩ (VGS = 10V)
DS(ON) < 6.5mΩ (VGS = 4.5V)
R
TO-251
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
85
V
A
TC=25°C G
TC=100°C B
ID
63
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
200
30
A
112
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
100
1.5
°C/W
°C/W
RθJC
0.8
Alpha & Omega Semiconductor, Ltd.
AOU438
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
VGS=10V, VDS=5V
85
A
V
GS=10V, ID=20A
3.5
5.4
4.5
6.5
6.5
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
5.4
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
106
0.72
S
V
A
1
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3200 3840
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
590
414
VGS=0V, VDS=0V, f=1MHz
0.54
0.7
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
63
33
76
40
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=4.5V, VDS=15V, ID=20A
8.6
17.6
12
15.5
40
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
ns
14
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
34
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
41
ns
Qrr
30
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
40
30
20
50
40
30
20
VDS=5V
4.0V
125°C
3.5V
25°C
10
10
VGS=3V
0
0
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
8
7
6
5
4
3
2
1.6
1.4
1.2
1
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
VGS=10V
0
10
20
30
40
50
60
0.8
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
6
4
2
0
125°C
25°C
ID=20A
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
8
VDS=15V
ID=20A
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
1000
100
10
1000
800
600
400
200
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
1ms
100µs
10ms
DC
TJ(Max)=150°C
TA=25°C
1
0.1
1E-05 1E-04 0.001 0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
T
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
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