AOZ8234 [AOS]
Four-line TVS Diode; 四线TVS二极管
| 型号： | AOZ8234 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Four-line TVS Diode |
| 文件： | 总6页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOZ8234
Four-line TVS Diode
General Description
Features
z ESD protection for high-speed data lines:
The AOZ8234 is a transient voltage suppressor diode
array designed to protect data lines from high transient
conditions and ESD. This state-of-the-art device utilizes
– Exceeds: IEC 61000-4-2 (ESD) ±18 kV (air),
±18 kV (contact)
2
AOS leading edge Trench Vertical Structure [TVS] ™
– Human Body Model (HBM) ±30 kV
technology for superior clamping performance.
2
z Trench Vertical Structure [TVS] ™ based technology
used to achieve excellent ESD clamping performance
z Small package saves board space
z Low insertion loss
This device incorporates four TVS diodes in a single
package. Due to the flexibility of the design, the package
can be configured as a two channel bidirectional TVS
array. During transient conditions, the TVS diodes direct
the transient to ground. They may be used to meet the
ESD immunity requirements of IEC 61000-4-2, Level 4
(±15 kV air, ±8 kV contact discharge).
z Protects four unidirectional or two bidirectional
I/O lines
z Low clamping voltage
z Low operating voltage: 5.0V
z Green product, Pb-free
The AOZ8234 comes in an RoHS compliant DFN
package and is rated over a -40 °C to +85 °C ambient
temperature range.
Applications
z Portable handheld devices
z Keypads, data lines
z Notebook computers
z Digital cameras
The very small 1.45 mm x 1.0 mm x 0.55 mm
DFN package makes it ideal for applications where
PCB space is a premium. The small size and high ESD
protection makes it ideal for protecting high speed video
and data communication interfaces.
z Portable GPS
z MP3 players
Typical Applications
Pin Configuration
I/O1
I/O2
I/O3
I/O4
CH1
1
2
3
6
CH4
N/C
VN
5
4
CH2
CH3
Top View
Unidirection Protection of Four Lines
I/O1
I/O2
Bidirection Protection of Two Lines
Rev. 1.0 July 2011
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Page 1 of 6
AOZ8234
Ordering Information
Part Number
Ambient Temperature Range
-40 °C to +85 °C
Package
Environmental
AOZ8234DI
DFN 1.45 x 1.0
Green Product
RoHS Compliant
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Rating
VP – VN
5 V
4 A
Peak Pulse Current (IPP), tP = 8/20 µs
Storage Temperature (TS)
ESD Rating per IEC61000-4-2, Contact(1)
ESD Rating per IEC61000-4-2, Air(1)
ESD Rating per Human Body Model(2)
-65 °C to +150 °C
±18 kV
±18 kV
±30 kV
Notes:
1. IEC 61000-4-2 discharge with CDischarge = 150 pF, RDischarge = 330 Ω.
2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100 pF, RDischarge = 1.5 kΩ.
Maximum Operating Ratings
Parameter
Rating
-40 °C to +125 °C
Junction Temperature (TJ)
Electrical Characteristics
TA = 25°C unless otherwise specified. Specifications in BOLD indicate a temperature range of -40°C to +85°C.
Symbol
Parameter
Conditions
Between pin 5 and 2(3)
Min.
Typ.
Max. Units
VRWM
VBR
IR
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Diode Forward Voltage
5.0
V
V
IT = 1 mA, between pins 5 and 2(4)
VRWM = 5 V, between pins 5 and 2
IF = 15 mA
6.0
0.1
1.0
µA
V
VF
0.70
0.85
VCL
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 15 A, tp = 100 ns, any I/O pin to Ground
12.0
V
V
-10.0
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 25 A, tp = 100 ns, any I/O pin to Ground
VR = 0 V, f = 1 MHz, any I/O pin to Ground
15.0
V
V
-18.0
Cj
Junction Capacitance
13.5
16.0
pF
Notes:
3. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
4. VBR is measured at the pulse test current IT.
Rev. 1.0 July 2011
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Page 2 of 6
AOZ8234
Typical Performance Characteristics
Clamping Voltage vs. Peak Pulse Current
Clamping Voltage vs. Current
(tperiod = 100ns, tr = 1ns)
(tperiod = 100ns, tr = 1ns)
16
20
18
16
14
12
10
8
15
14
13
12
11
10
9
6
8
4
7
2
6
0
5
10
15
20
25
30
5
10
15
20
25
30
Current (A)
Peak Pulse Current, I (A)
PP
Capacitance vs. Reverse Bias
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
Reverse Bias (Volts)
Rev. 1.0 July 2011
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AOZ8234
Applications Information
Device Connection for Protection of Four Data Lines
I/O1
I/O2
These devices are designed to protect up to four
unidirectional data lines. The device is connected as
follows.
1
2
3
6
1
3
4
6
1. Unidirectional protection of four I/O lines is achieved
by connecting pins 1, 3, 4, and 6 to the data lines.
Connect pin 2 to ground. The ground connection
should be made directly to the ground plane for best
results. The path length is kept as short as possible
to reduce the effects of parasitic inductance in the
board traces.
5
4
I/O3
I/O4
2
Protection of Four Unidirectional Lines
Circuit Diagram
Device Connection for Protection of Two
Bidirectional Data Lines
I/O1
I/O2
These devices are designed to protect up to two
bidirectional data lines. The device is connected as
follows.
1
3
1
2
3
6
5
4
1. Bidirectional protection of two I/O lines is achieved by
connecting pins 1 and 3 to the data lines. Connect
pin 4 and 6 to ground. The ground connection should
be made directly to the ground plane for best results.
The path length is kept as short as possible to reduce
the effects of parasitic inductance in the board traces.
4
6
Circuit Diagram
Protection of Two Bidirectional Lines
Circuit Board Layout Recommendations for
Suppression of ESD
Good circuit board layout is critical for the suppression of
ESD induced transients. The following guidelines are
recommended:
z Place the TVS near the input terminals or connectors
to restrict transient coupling.
z Minimize the path length between the TVS and the
protected line.
z Minimize all conductive loops including power and
ground loops.
z The ESD transient return path to ground should be
kept as short as possible.
z Never run critical signals near board edges.
z Use ground planes whenever possible.
Rev. 1.0 July 2011
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AOZ8234
Package Dimensions, DFN 1.45 x 1.0, 6L
e
b
D
b1
L
E
3
2
1
TOP VIEW
Pin #1 Dot
by Marking
e
BOTTOM VIEW
A
c
Dimensions in millimeters
Dimensions in inches
SIDE VIEW
A1
Symbols Min.
Nom. Max.
Symbols Min.
Nom. Max.
0.020 0.022 0.024
0.000 0.002
0.008 0.010 0.012
0.016
A
A1
b
0.50
0.00
0.20
0.55
—
0.25
0.60
0.05
0.30
A
A1
b
b1
c
—
RECOMMENDED LAND PATTERN
b1
c
D
E
0.40
0.152 Ref.
1.45
0.006 Ref.
1.40
0.95
1.50
1.05
D
E
e
0.055 0.057 0.059
0.037 0.039 0.041
0.020 BSC
0.40
0.20
1.00
0.50
e
L
0.50 BSC
0.38
0.33
0.43
L
0.013 0.015 0.017
0.36
1.20
0.72
0.24
0.48
UNIT: mm
Rev. 1.0 July 2011
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Page 5 of 6
AOZ8234
Part Marking
AOZ8234DI
(DFN 1.45 x 1.0)
LWP
Assembly Lot & Location Code
Week & Year Code
Part Number Code
This data sheet contains preliminary data; supplementary data may be published at a later date.
Alpha & Omega Semiconductor reserves the right to make changes at any time without notice.
LIFE SUPPORT POLICY
ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body or (b) support or sustain life, and (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of
the user.
2. A critical component in any component of a life
support, device, or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Rev. 1.0 July 2011
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