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TM1661M-L [APOLLOELECTRON]

Standard Triac; 标准TRIAC
TM1661M-L
型号： TM1661M-L
厂家： Apollo Electron Co., Ltd.    Apollo Electron Co., Ltd.
描述：

Standard Triac
标准TRIAC

三端双向交流开关
文件： 总6页 (文件大小：2231K)
中文：  中文翻译
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TF16A60  
Standard Triac  
TO-220F  
Symbol  
V
= 600V  
○
2.T2  
DRM  
I
= 16 A  
T(RMS)  
▼▲  
○
3.Gate  
I
= 168A  
TSM  
○
1.T1  
1
2
3
Features  
◆ Repetitive Peakk Off-State Voltage : 600V  
◆ R.M.S On-State Current ( I  
= 16 A )  
T(RMS)  
◆ High Commutation dv/dt  
General Description  
This device is fully isolated p ackage suitable for AC sw itching application, phase control application  
such as fan speed and temperature modulation control, industrial and domestic lighting control and  
static switching relay.  
This device may substitute for BTA16-600, BTB16-600, BT139-600, BCR16PM-12, TM1661M/S-L series.  
Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Sine wave, 50 to 60 Hz  
Tj = 125 °C, Full Sine wave  
Ratings  
600  
Units  
V
IT(RMS)  
16  
A
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
Surge On-State Current  
160/168  
A
I2t  
PG(AV)  
IGM  
tp =10ms  
Tj=125°C  
Tj=125°C  
128  
A2  
W
A
I2t  
s
Average Gate Power Dissipation  
Peak Gate Current  
1
2
TJ  
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
TSTG  
°C..  
July, 2010. Rev.2  
1/6  
copyright @ Apollo Electron Co., Ltd. All rights reserved.  
TF16A60  
Electrical Characteristics (Tj=25 °C unless otherwise specified)  
Ratings  
Typ.  
Symbol  
Items  
Conditions  
Unit  
Min.  
Max.  
V
D = VDRM, Single Phase, Half Wave  
Repetitive Peak Off-State  
Current  
IDRM  
VTM  
----  
----  
2.0  
mA  
V
Tj = 125 °C  
ITM = 22.5 A, tp=380㎲  
Peak On-State Voltage  
__  
─
─
─
─
─
─
----  
1.55  
30  
─
─
I+  
Ⅰ
GT1  
I -  
V
V
D = 12 V, RL=30 Ω  
Gate Trigger Current  
30  
mA  
Ⅱ
─
GT1  
I -  
30  
Ⅲ
Ⅰ
─
GT3  
V+  
1.5  
1.5  
1.5  
─
GT1  
V-GT1  
D = 12 V, RL=30 Ω  
Gate Trigger Voltage  
V
Ⅱ
─
V-GT3  
VGD  
Ⅲ
─
TJ = 125 °C, VD=VDRM, RL=3.3kΩ  
Non-Trigger Gate Voltage  
V
0.2  
-----  
TJ = 125 °C,  
VD=2/3 VDRM  
Critical Rate of Rise Off-State  
Voltage  
dv/dt  
IH  
200  
----  
----  
V/㎲  
Holding Current  
I =0.2A  
T
---  
50  
mA  
---  
2/6  
TF16A60  
Fig 1. Gate Characteristics  
Fig 2. On-State Voltage  
102  
101  
100  
VGM (10V)  
101  
100  
10-1  
PGM (5W)  
TJ = 125oC  
PG(AV) (1W)  
25 ℃  
TJ = 25oC  
VGD (0.2V)  
101  
102  
103  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
On-State Voltage [V]  
Gate Current [mA]  
Fig 4. On State Current vs.  
Fig 3. On State Current vs.  
Maximum Power Dissipation  
Allowable Case Temperature  
20  
18  
16  
14  
12  
10  
8
130  
120  
110  
100  
90  
θ = 180o  
θ = 150o  
θ = 120o  
θ
π
π
2
θ
θ = 90o  
θ = 60o  
360°  
θ : Conduction Angle  
θ = 30o  
θ = 30o  
θ
π
π
2
θ = 60o  
θ = 90o  
θ = 120o  
θ = 150o  
θ = 180o  
θ
6
80  
360°  
4
70  
θ : Conduction Angle  
2
0
60  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
RMS On-State Current [A]  
RMS On-State Current [A]  
Fig 6. Gate Trigger Voltage vs.  
Junction Temperature  
Fig 5. Surge On-State Current Rating  
( Non-Repetitive )  
10  
200  
150  
100  
50  
60Hz  
V_  
GT3  
1
V+  
GT1  
50Hz  
V_  
GT1  
0
0.1  
-50  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (cycles)  
3/6  
TF16A60  
Fig 7. Gate Trigger Current vs.  
Junction Temperature  
Fig 8. Transient Thermal Impedance  
10  
10  
1
1
I+  
GT1  
I_  
GT1  
I_  
GT3  
0.1  
-50  
0.1  
10-2  
10-1  
100  
101  
102  
0
50  
100  
150  
Junction Temperature [ oC]  
Time (sec)  
4/6  
TF16A60  
TO-220F Package Dimension  
INCHES  
TYP  
10.08  
15.50  
3.00  
10.50  
1.08  
1.84  
MILLIMETERS  
Symbol  
MIN  
MAX  
10.28  
15.70  
3.05  
10.70  
1.20  
1.87  
0.90  
3.40  
4.55  
6.60  
0.61  
2.70  
2.93  
2.74  
MIN  
TYP  
26.11  
39.88  
7.75  
27.18  
3.05  
4.75  
2.29  
8.64  
11.56  
16.76  
1.54  
6.86  
7.44  
6.96  
A
B
C
D
E
F
G
H
I
9.88  
15.30  
2.95  
10.30  
0.95  
1.81  
0.50  
3.00  
4.35  
6.20  
0.41  
2.30  
2.53  
2.34  
25.10  
38.86  
7.49  
26.16  
2.41  
4.60  
1.27  
7.62  
11.05  
15.75  
1.03  
5.84  
6.43  
25.60  
39.37  
7.62  
26.67  
2.74  
4.67  
1.78  
8.13  
11.30  
16.26  
1.28  
6.35  
6.93  
6.45  
0.70  
3.20  
4.45  
6.40  
0.51  
2.50  
2.73  
2.54  
J
K
L
M
N
5.94  
5/6  
TF16A60  
TO-220F Package Dimension, Forming  
mm  
Inch  
Typ.  
Dim.  
Min.  
10.4  
6.18  
9.55  
8.4  
6.05  
1.26  
3.17  
1.87  
2.57  
Typ.  
Max.  
10.6  
6.44  
9.81  
8.66  
6.15  
1.36  
3.43  
2.13  
2.83  
Min.  
Max.  
0.417  
0.254  
0.386  
0.341  
0.242  
0.054  
0.135  
0.084  
0.111  
A
B
0.409  
0.243  
0.376  
0.331  
0.238  
0.050  
0.125  
0.074  
0.101  
C
D
E
F
G
H
I
J
2.54  
5.08  
0.100  
0.200  
K
L
2.51  
1.23  
0.45  
0.65  
2.62  
1.36  
0.63  
0.78  
0.099  
0.048  
0.018  
0.0025  
0.103  
0.054  
0.025  
0.031  
M
N
O
P
5.0  
3.7  
3.2  
1.5  
0.197  
0.146  
0.126  
0.059  
φ
φ 1  
φ 2  
A
E
I
H
L
F
B
C
φ
φ 1  
φ 2  
G
M
1
2
3
D
1. T1  
2. T2  
N
3. Gate  
O
J
P
K
6/6  

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