MT110C12T1 [APTSEMI]
Thyristor Module;
| 型号： | MT110C12T1 |
| 厂家： | 
Jiangsu APT Semiconductor Co.,Ltd |
| 描述： | Thyristor Module |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT110C18T1
Thyristor Module
VRRM / VDRM 800 to 1800V
ITAV
110A
Applications
y
y
y
y
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
y
y
y
y
y
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
y
Module Type
TYPE
VRRM
800V
1200V
1600V
1800V
VRSM
900V
1300V
1700V
1900V
MT110C08T1
MT110C12T1
MT110C16T1
MT110C18T1
Maximum Ratings
Symbol
Conditions
Values
Units
ITAV
Sine 180o;Tc=85℃
110
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2250
1900
ITSM
i2t
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
25000
18000
A2s
Visol
Tvj
a.c.50HZ;r.m.s.;1min
3000
V
-40 to 130
-40 to 125
3±15%
5±15%
℃
Tstg
Mt
℃
To terminals(M5)
To heatsink(M6)
Nm
Nm
Ms
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
150
A/us
dv/dt
a
TJ= TVJM ,2/3VDRM, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
1000
50
V/us
m/s2
g
Weight
100
Thermal Characteristics
Symbol
Rth(j-c)
Conditions
Cont.;per thyristor / per module
Values
0.28/0.14
0.2/0.1
Units
℃/W
Rth(c-s)
per thyristor / per module
℃/W
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT110C18T1
Electrical Characteristics
Values
Typ.
Symbol
Conditions
Units
Min.
Max.
1.65
20
VTM
T=25℃ ITM =300A
V
mA
V
IRRM/IDRM
VTO
rT
TVJ =TVJM ,VR=VRRM ,VD=VDRM
For power-loss calculations only (TVJ =125℃)
TVJ =TVJM
0.9
2
mΩ
V
VGT
IGT
TVJ =25℃ , VD =6V
3
TVJ =25℃ , VD =6V
150
0.25
6
mA
V
VGD
IGD
TVJ =125℃ , VD =2/3VDRM
TVJ =125℃ , VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
IL
300
150
1
600
250
IH
mA
us
tgd
tq
TVJ =25℃, IG=1A, diG/dt=1A/us
TVJ =TVJM
us
100
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT110C18T1
Performance Curves
200
A
200
W
sin.180
rec.120
DC
160
DC
150
rec.60
120
80
rec.30
sin.180
100
rec.120
rec.60
50
rec.30
40
PTAV
0
ITAVM
0
0
ITAV
50
100
A
150
0
Tc
50
100
℃ 130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
2500
A
0.50
50HZ
Zth(j-S)
Zth(j-C)
℃/ W
0.25
1250
0
0
0.001
t
0.01
0.1
1
10
S
100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
300
A
Typ.
200
max.
100
25℃
IT
0
- - -125℃
0
VTM
0.5
1.0
1.5 2.0
V
Fig5. Forward Characteristics
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT110C18T1
100
V
1/2·MT110C18T1
20V;20Ω
10
1
VGT
∧
PG(tp)
-40℃
25℃
Tvj
125℃
IGT
VGD125
℃
VG
IGD125
℃
0.1
0.001 IG
0.01
0.1
1
10
A
100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
Dimensions in mm
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
4
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