ASL51S9 [ASB]
High Gain, Low Noise Amplifier;
| 型号： | ASL51S9 |
| 厂家： | 
ADVANCED SEMICONDUCTOR BUSINESS INC. |
| 描述： | High Gain, Low Noise Amplifier |
| 文件： | 总8页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASL51S9
ASL51S9 Data Sheet
High Gain, Low Noise Amplifier
1. Product Overview
1.1 General Description
ASL51S9 is a low noise amplifier with high linearity over a wide range of frequency up to 1.7 ~ 3.0 GHz
with S11 & S22 < -10 dB. It is also suitable for use in the mobile wireless systems such as PCS, WCDMA,
LTE, WiBro, WiMAX, WLAN and so on. It has an active bias circuit for stable current over temperature
and process variation. The amplifier is available in SOT89 package and passes the stringent DC, RF and
reliability tests.
1.2 Features
16.4 dB Gain at 2000 MHz
17.5 dBm P1dB at 2000 MHz
37.0 dBm Output IP3 at 2000 MHz
0.8 dB NF at 2000 MHz
MTTF > 100 Years
Single Supply: +3.3 V
1.3 Applications
Low Noise Amplifier for PCS and WCDMA
Other Low Noise Application
1.4 Package Profile & RoHS Compliance
SOT89, 4.5x4.0 mm2, surface mount
RoHS-compliant
1/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
2. Summary on Product Performances
2.1 Typical Performance
Supply voltage = +3.3 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Typical
1700
0.70
17.8
-18.0
-10.0
37.0
17.5
55
Unit
MHz
dB
1800
0.75
17.3
-18.0
-10.0
37.0
17.5
1900
0.75
16.9
-18.0
-10.0
37.0
17.5
2000
0.80
16.3
-18.0
-11.0
37.0
17.5
dB
S11
dB
S22
dB
Output IP31)
Output P1dB
Current
dBm
dBm
mA
V
Device Voltage
+3.3
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +3.3 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Min
Typ
Max
Unit
MHz
dB
2000
0.80
16.3
-18.0
-11.0
37.0
17.5
55
dB
S11
dB
S22
dB
Output IP3
Output P1dB
Current
dBm
dBm
mA
V
Device Voltage
+3.3
2.3 Pin Configuration
Pin
1
Description
RF_IN
Simplified Outline
2
Ground
3
RF_OUT & Bias
2/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
2.4 Absolute Maximum Ratings
Parameters
Max. Ratings
-40 to 85 C
-40 to 150 C
+5.5 V
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50 matched)
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
110
Unit
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
MM
Class 1A
Class A
Voltage Level: 400 V
Voltage Level: 50 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
3. Application: 1700 ~ 2000 MHz (Vdevice = +3.3 V)
3.1 Application Circuit & Evaluation Board
Vdevice = +3.3 V
C4
C3
L2
C2
C1
RF OUT
RF IN
ASL51S9
L1
PCB Information
Material
FR4
Thickness (mm)
Size (mm)
EB No.
0.8
40x40
EB-89-A2
Bill of Material
Symbol
ASL51S9
C1
Value
Size
-
Description
Manufacturer
ASB
-
MMIC Amplifier
3 pF
0603
0603
0603
0603
0603
0603
DC block and matching capacitor
DC blocking capacitor
Decoupling capacitor
Decoupling capacitor
Matching inductor
Murata
Murata
Murata
Murata
Murata
Murata
C2
100 pF
100 pF
1 F
C3
C3
L1
5.6 nH
18 nH
L2
RF choke inductor
4/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
3.2 Performance Table
Supply voltage = +3.3 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Typical
1700
0.70
17.8
-18.0
-10.0
37.0
17.5
55
Unit
1800
0.75
17.3
-18.0
-10.0
37.0
17.5
1900
0.75
16.9
-18.0
-10.0
37.0
17.5
2000
0.80
16.3
-18.0
-11.0
37.0
17.5
MHz
dB
dB
S11
dB
S22
dB
Output IP31)
Output P1dB1)
Current
dBm
dBm
mA
V
Device Voltage
+3.3
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz
.
3.3 Plot of S-parameter & Stability Factor
30
7
6
5
4
3
2
1
0
S21
20
10
0
S22
-10
K
S11
-20
-30
S12
-40
0
500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
5/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
3.4 Plot of Noise Figure
1.5
1.25
1
0.75
0.5
0.25
0
1700
1800
1900
2000
Frequency (MHz)
6/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
4. Package Outline (SOT89, 4.5x4.0x1.5 mm)
Part No.
Lot No.
Dimensions (In mm)
Symbols
MIN
1.40
0.89
0.36
0.41
0.38
4.40
1.40
3.64
2.40
2.90
0.35
0.65
1.40
NOM
1.50
1.04
0.42
0.47
0.40
4.50
1.60
---
2.50
3.00
0.40
0.75
1.50
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
A
L
b
b1
C
D
D1
E
E1
e1
H
ASL51S9
Pxxxx
S
e
5. Surface Mount Recommendation (In mm)
NOTE
1. The number and size of ground via holes in a circuit
board are critical for thermal and RF grounding
considerations.
2. Recommended is that the ground via holes be
placed on the bottom of the lead pin 2 and exposed
pad of the device for better RF and thermal
performance, as shown in the drawing at the left
side.
7/8
ASB Inc.
sales@asb.co.kr
January 2017
ASL51S9
6. Recommended Soldering Reflow Profile
20~40 sec
260 C
Ramp-up
(3 C/sec)
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
(End of Datasheet)
Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB
assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet
may be copied or reproduced in any form or by any means without the prior written consent of ASB
8/8
ASB Inc.
sales@asb.co.kr
January 2017
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