ASL51T8 [ASB]
High Gain, Low Noise Amplifier;
| 型号： | ASL51T8 |
| 厂家： | 
ADVANCED SEMICONDUCTOR BUSINESS INC. |
| 描述： | High Gain, Low Noise Amplifier |
| 文件： | 总11页 (文件大小：583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASL51T8
ASL51T8 Data Sheet
High Gain, Low Noise Amplifier
Product Overview
1.1 General Description
ASL51T8, a wideband linear low noise amplifier MMIC, has low noise and high linearity, being suitable for
use in both receiver and transmitter of telecommunication systems about 500 ~ 3000 MHz. The amplifier is
available in a TDFN8 package and passes through the stringent DC, RF and reliability tests.
1.2 Features
18 dB Gain at 900 MHz
21 dBm P1dB at 900 MHz
38 dBm Output IP3 at 900 MHz
0.37 dB NF at 900 MHz
Current adjustable with R2 (in application circuit 3.1)
MTTF > 100 Years
Single Supply: +3 ~ +5 V
1.3 Applications
Low Noise Amplifier for LTE, GSM, CDMA, GPS, PCS, and WCDMA
Other Low Noise Application
1.4 Package Profile & RoHS Compliance
TDFN8, 2.0x2.0 mm2, surface mount
RoHS-compliant
1/11
ASB Inc.
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January 2017
ASL51T8
Summary on Product Performances
2.1 Typical Performance
Supply voltage = +5 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Typical
500
Unit
600
700
900
1000 1200 1500 1800 2000 MHz
0.50
0.45
21.2
0.35
20.0
0.37
18.0
0.45
17.5
0.55
16.0
0.65
14.5
0.80
13.0
1.00
12.4
dB
dB
22.5
S11
-15.0 -18.0 -20.0 -18.0 -17.0 -17.0 -18.0 -20.0 -20.0 dB
-18.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 dB
S22
Output IP31)
Output P1dB
Current
33.0
21.0
57
35.0
21.0
37.0
21.0
38.0
21.0
37.0
21.0
34.0
21.0
32.0
20.0
32.0
18.0
31.0
17.0
dBm
dBm
mA
V
Device Voltage
+4.5
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +5 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Min
Typ
900
0.37
18.0
-18
-18
38
Max
0.50
Unit
MHz
dB
17.0
-16
-16
36
dB
S11
dB
S22
dB
Output IP3
Output P1dB
Current
dBm
dBm
mA
V
20
21
50
57
65
Device Voltage
+4.5
2.3 Pin Configuration
Pin
Description
Bias
Simplified Outline
1
Bias
1
2
3
4
Network
8
7
6
5
2
RF_IN
7
RF_OUT
NC or GND
GND
3,4,5,6,8
Backside paddle
2/11
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January 2017
ASL51T8
2.4 Absolute Maximum Ratings
Parameters
Max. Ratings
-40 to 85 C
-40 to 150 C
+10 V
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50 matched)
+150 C
+24 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
80
Unit
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
MM
Class 1A
Class A
Voltage Level: 400 V
Voltage Level: 50 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/11
ASB Inc.
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January 2017
ASL51T8
Application: 500 ~ 2000 MHz (Vsupply = +5 V)
3.1 Application Circuit & Evaluation Board
Vsupply = +5 V
R2
C4
C3
R1
L1
L2
C1
C2
RF OUT
RF IN
ASL51T8
PCB Information
Material
FR4
Thickness (mm)
Size (mm)
0.8
25x25
EB-TDFN8-1
EB No.
Bill of Material
Symbol
ASL51T8
C1, C2
C3
Value
Size
-
Description
Manufacturer
-
MMIC Amplifier
ASB
100 pF
100 pF
1 F
0603
0603
0603
0603
0603
0603
0603
DC blocking capacitor
Decoupling capacitor
Decoupling capacitor
RF choke inductor
RF choke inductor
Bias resistor
Murata
Murata
Murata
Murata
Murata
Samsung
Samsung
C4
L1
18 nH
27 nH
10
L2
R1
R2
Current adjust resistor
6.2 k
4/11
ASB Inc.
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January 2017
ASL51T8
3.2 Performance Table
Supply voltage = +5 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Typical
500
Unit
600
700
900
1000 1200 1500 1800 2000 MHz
0.50
0.45
21.2
0.35
20.0
0.37
18.0
0.45
17.5
0.55
16.0
0.65
14.5
0.80
13.0
1.00
12.4
dB
dB
22.5
S11
-15.0 -18.0 -20.0 -18.0 -17.0 -17.0 -18.0 -20.0 -20.0 dB
-18.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 dB
S22
Output IP31)
Output P1dB
Current
33.0
21.0
57
35.0
21.0
37.0
21.0
38.0
21.0
37.0
21.0
34.0
21.0
32.0
20.0
32.0
18.0
31.0
17.0
dBm
dBm
mA
V
Device Voltage
+4.5
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
3.3 Plot of S-parameter & Stability Factor
40
10
30
9
8
7
6
5
4
3
2
1
0
S21
20
10
0
-10
S11
-20
-30
S22
S12
K
-40
-50
-60
0
500 1000 1500 2000 2500 3000
Frequency (MHz)
5/11
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ASL51T8
3.4 Plot of Noise Figure
6/11
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ASL51T8
Application: 500 ~ 2000 MHz (Vsupply = +3.3 V)
4.1 Application Circuit & Evaluation Board
Vsupply= +3.3 V
R2
C4
C3
R1
L1
L2
C1
C2
RF OUT
RF IN
ASL51T8
PCB Information
Material
FR4
Thickness (mm)
Size (mm)
0.8
25x25
EB-TDFN8-1
EB No.
Bill of Material
Symbol
ASL51T8
C1, C2
C3
Value
Size
-
Description
Manufacturer
-
MMIC Amplifier
ASB
100 pF
100 pF
1 F
0603
0603
0603
0603
0603
0603
0603
DC blocking capacitor
Decoupling capacitor
Decoupling capacitor
RF choke inductor
RF choke inductor
Bias resistor
Murata
Murata
Murata
Murata
Murata
Samsung
Samsung
C4
L1
18 nH
27 nH
10
L2
R1
R2
Current adjust resistor
3.6 k
7/11
ASB Inc.
sales@asb.co.kr
January 2017
ASL51T8
4.2 Performance Table
Supply voltage = +3.3 V, TA = +25 C, ZO = 50
Parameter
Frequency
Noise Figure
Gain
Typical
500
Unit
600
700
900
1000 1200 1500 1800 2000 MHz
0.55
0.50
21.2
0.40
20.0
0.42
18.0
0.45
17.2
0.60
15.9
0.70
14.3
0.85
13.0
1.05
12.2
dB
dB
22.5
S11
-17.0 -20.0 -18.0 -15.0 -15.0 -15.0 -15.0 -18.0 -20.0 dB
-17.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 -18.0 dB
S22
Output IP31)
Output P1dB
Current
33.0
17.0
54
35.0
17.0
36.0
17.0
36.0
17.0
34.0
17.0
31.0
17.0
28.0
16.0
27.0
15.0
26.0
14.0
dBm
dBm
mA
V
Device Voltage
+2.7
1) OIP3 is measured with two tones at the output power of +0 dBm/tone separated by 1 MHz.
4.3 Plot of S-parameter & Stability Factor
8/11
ASB Inc.
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January 2017
ASL51T8
4.4 Plot of Noise Figure
9/11
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ASL51T8
Package Outline (TDFN8)
Dimensions (In mm)
Symbols
MIN
-
0.18
1.95
-
1.95
-
-
NOM
0.20REF
0.23
2.00
1.7BSC
2.00
0.7BSC
0.5BSC
0.40
MAX
-
0.28
2.03
-
2.03
-
-
A
B
D
D1
E
E1
E2
L
0.35
0.80
0.45
0.90
H
0.85
Surface Mount Recommendation (In mm)
NOTE
1. We recommend that the ground via holes be placed
on the bottom of exposed pad of the device for better
RF and thermal performance, as shown in the
drawing at the left side.
10/11
ASB Inc.
sales@asb.co.kr
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ASL51T8
Recommended Soldering Reflow Profile
20~40 sec
260 C
Ramp-up
(3 C/sec)
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
(End of Datasheet)
Copyright 2013-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB
assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet
may be copied or reproduced in any form or by any means without the prior written consent of ASB
11/11
ASB Inc.
sales@asb.co.kr
January 2017
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