MBR3045F [ASEMI]

Dual High-Voltage Schottky Rectifiers; 双高压肖特基整流器
MBR3045F
型号: MBR3045F
厂家: ASEMI    ASEMI
描述:

Dual High-Voltage Schottky Rectifiers
双高压肖特基整流器

高压
文件: 总3页 (文件大小:520K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 40V  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
IF(AV)= 30A  
VRRM= 45V  
IF(AV)= 30A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 50V  
IF(AV)= 30A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR3040、MBR3045、MBR3050 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the  
device uses the two chip, the common cathode, the plastic  
package structure.  
Polarity  
Absolute Maximum Ratings  
Item  
MBR3050  
Symbol MBR3040 MBR3045  
Unit  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
VRRM  
VDC  
40  
40  
45  
45  
50  
50  
V
V
Average Rectified Forward Current TC=150℃  
Device  
Whole  
30  
15  
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Represent  
ative  
Test Condition  
Item  
Minimum  
MBR3040 MBR3045 MBR3050 Unit  
500  
10  
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
uA  
mA  
IR  
VR=VRRM  
IF=15A  
0.70 0.72  
0.74 V  
www.asemi.tw  
Page1  
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
The forward voltage and forward current curve  
The reverse leak current and the reverse  
voltage (single-device) curve  
nt  
Current Derating Curve, Per Eleme  
The crunode capacitance curve  
www.asemi.tw  
2
Page  
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
ITO-220AB  
注意事项:  
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片,将ITO-220AB自螺丝孔锁  
在金属散热片上。  
2 XXXX代表日期码,第一码表示公元年的最后一码,第二码表示生产时当月码  
(A,B,C.为一月,二月,三月),第三,四码表示大量生产时批次码。  
例如:2009年第一月生产的,D/C为9AXX。  
MBR3045  
XXXX  
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。  
修订内容  
www.asemi.tw  
Page3  

相关型号:

MBR3045FCT

SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR3045FCT

30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MCC

MBR3045FCT

30 Amp Schottky Barrier Rectifier 20 to 100 Volts
KERSEMI

MBR3045FCT-BP

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC

MBR3045FCT-BP-HF

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC

MBR3045FCT-TP

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC

MBR3045FCT-TP-HF

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC

MBR3045PT

30 Ampere Schottky Barrier Rectifiers
FAIRCHILD

MBR3045PT

30A SCHOTTKY BARRIER RECTIFIER
DIODES

MBR3045PT

SCHOTTKY RECTIFIER
VISHAY

MBR3045PT

肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER

MBR3045PT

30 Amp Schottky Barrier Rectifier 20 to 60 Volts
MCC