SB3045LCT [ASEMI]
DUAL LOW VF SCHOTTKY RECTIFIER; 双路低VF肖特基整流器
| 元器件型号： | SB3045LCT |
| 生产厂家： | 
台湾ASEMI
|
| 描述和应用： | DUAL LOW VF SCHOTTKY RECTIFIER |
| PDF文件： | 总2页 (文件大小：335K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：SB3045LCT参数 | |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| 零件包装代码 | TO-247 |
| 包装说明 | ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.80 |
| 风险等级 | 5.62 |
| Is Samacsys | N |
| 其他特性 | FREE WHEELING DIODE, LOW POWER LOSS |
| 应用 | EFFICIENCY |
| 配置 | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| JEDEC-95代码 | TO-247 |
| JESD-30 代码 | R-PSFM-T3 |
| 最大非重复峰值正向电流 | 275 A |
| 元件数量 | 2 |
| 相数 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 最低工作温度 | -55 °C |
| 最大输出电流 | 15 A |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 最大重复峰值反向电压 | 45 V |
| 表面贴装 | NO |
| 技术 | SCHOTTKY |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
SB3045LCT
SB3 04 5LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
4 5 Volts
CURRENT
3 0 Amperes
2.75
2.65
6.9
6.5
10.36
9.96
4.93
4.53
2.72
2.32
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
2.96
2.56
13.3
12.9
16.07
15.67
0.9
0.7
1.46
1.26
2.45
2.2
1.24
1.20
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams.
2.74
2.34
2.74
2.34
0.6
0.45
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.3)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Typical thermal resistance
Operating junction
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
Θ
JC
T
J
T
STG
VALUE
45
30
15
200
2.5
-55 to + 125
-55 to + 125
o
UNIT
V
A
A
C/W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=5A
V
F
I
F
=10A
I
R
V
R
=45V
T
J
=25
o
C
T
J
=25
o
C
T
J
=100
o
C
T
J
=25
o
C
MIN.
50
-
-
-
-
-
-
TYP.
-
0.42
0.46
100
-
MAX.
-
0.46
0.52
500
10
UNIT
V
V
V
uA
mA
Instantaneous forward voltage per
diode
(1)
Reverse current per diode
(2)
Note.1 Pulse test : 380μs pulse width, 1% duty cycle
2. Pulse test : Pulse width < 2.5ms
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PAGE . 1
SB3045LCT
SB3 04 5LCT
I
R
, Leakage Current (mA)
100
100
T
J
= 100°C
I
F
, Forward Current (A)
Per Diode
10
T
J
= 125°C
1
Per Diode
10
T
J
= 100°C
T
J
= 25°C
T
J
= 75°C
1
0.1
T
J
= 25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.01
20
40
60
80
100
V
F
, Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.1 Typical Forward Characteristics
Fig.2 Typical Reverse Characteristics
C
J
, Junction Capacitance
(pF)
10000
I
F
, Forward Current (A)
Per Diode
1000
12.00
10.00
8.00
6.00
4.00
2.00
0.00
0
25
50
75
100
Per Diode
100
10
0.1
1
10
100
125
150
V
R
, Reverse Bias Voltage (V)
T
C
, Case Temperature (°C)
Fig.3 Typical Junction Capacitance
Fig.4 Forward Current Derating Curve
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PAGE . 2
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