SB3045LCT [ASEMI]

DUAL LOW VF SCHOTTKY RECTIFIER; 双路低VF肖特基整流器
SB3045LCT
元器件型号: SB3045LCT
生产厂家: 台湾ASEMI    台湾ASEMI
描述和应用:

DUAL LOW VF SCHOTTKY RECTIFIER
双路低VF肖特基整流器

PDF文件: 总2页 (文件大小:335K)
下载文档:  下载PDF数据表文档文件
型号参数:SB3045LCT参数
是否Rohs认证 符合
生命周期Active
零件包装代码TO-247
包装说明ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN
针数3
Reach Compliance Codenot_compliant
ECCN代码EAR99
HTS代码8541.10.00.80
风险等级5.62
Is SamacsysN
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-247
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流275 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流15 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压45 V
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
SB3045LCT
SB3 04 5LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
4 5 Volts
CURRENT
3 0 Amperes
2.75
2.65
6.9
6.5
10.36
9.96
4.93
4.53
2.72
2.32
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
2.96
2.56
13.3
12.9
16.07
15.67
0.9
0.7
1.46
1.26
2.45
2.2
1.24
1.20
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams.
2.74
2.34
2.74
2.34
0.6
0.45
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.3)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Typical thermal resistance
Operating junction
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
Θ
JC
T
J
T
STG
VALUE
45
30
15
200
2.5
-55 to + 125
-55 to + 125
o
UNIT
V
A
A
C/W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=5A
V
F
I
F
=10A
I
R
V
R
=45V
T
J
=25
o
C
T
J
=25
o
C
T
J
=100
o
C
T
J
=25
o
C
MIN.
50
-
-
-
-
-
-
TYP.
-
0.42
0.46
100
-
MAX.
-
0.46
0.52
500
10
UNIT
V
V
V
uA
mA
Instantaneous forward voltage per
diode
(1)
Reverse current per diode
(2)
Note.1 Pulse test : 380μs pulse width, 1% duty cycle
2. Pulse test : Pulse width < 2.5ms
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PAGE . 1
SB3045LCT
SB3 04 5LCT
I
R
, Leakage Current (mA)
100
100
T
J
= 100°C
I
F
, Forward Current (A)
Per Diode
10
T
J
= 125°C
1
Per Diode
10
T
J
= 100°C
T
J
= 25°C
T
J
= 75°C
1
0.1
T
J
= 25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.01
20
40
60
80
100
V
F
, Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.1 Typical Forward Characteristics
Fig.2 Typical Reverse Characteristics
C
J
, Junction Capacitance
(pF)
10000
I
F
, Forward Current (A)
Per Diode
1000
12.00
10.00
8.00
6.00
4.00
2.00
0.00
0
25
50
75
100
Per Diode
100
10
0.1
1
10
100
125
150
V
R
, Reverse Bias Voltage (V)
T
C
, Case Temperature (°C)
Fig.3 Typical Junction Capacitance
Fig.4 Forward Current Derating Curve
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PAGE . 2
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