ALR030_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ALR030_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ALR030
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .310 2L FLG
DESCRIPTION:
A
.040 x 45°
4x .062 x 45°
C
2 x B
D
The ASI ALR030 is Designed for
1200 – 1400 MHz, L-Band Applications.
Ø E
F
G
H
I
J
K
FEATURES:
L
M
• Internal Input/Output Matching Network
• PG = 7.0 dB at 30 W/ 1400 MHz
• Omnigold™ Metalization System
R
P
N
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.095 / 2.41
.100 / 2.54
.050 / 1.27
.286 / 7.26
.110 / 2.79
.306 / 7.77
.105 / 2.67
.120 / 3.05
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.306 / 7.77
.130 / 3.30
.318 / 8.08
2.75 A
32 V
IC
VCC
PDISS
TJ
.148 / 3.76
.400 / 10.16
.119 / 3.02
.552 / 14.02
.790 / 20.07
.300 / 7.62
.003 / 0.08
.052 / 1.32
.118 / 3.00
.572 / 14.53
.810 / 20.57
.320 / 8.13
.006 / 0.15
.072 / 1.83
.131 / 3.33
.230 / 5.84
J
63 W @ TC = 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
2.4 °C/W
K
L
M
N
P
R
TSTG
θJC
ORDER CODE: ASI10512
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 20 mA
IE = 1 mA
VE = 28 V
55
V
55
BVCER
BVEBO
ICES
V
RBE = 10 Ω
3.5
V
5
mA
---
V
CE = 5.0 V
IC = 1.0 A
15
150
hFE
7.0
45
PG
dB
%
VCC = 28 V
POUT = 30 W
f = 1.2 to 1.4 GHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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