AM82731-001 [ASI]
NPN RF POWER TRANSISTOR; NPN RF功率晶体管
| 型号： | AM82731-001 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM82731-001
NPN RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 400 2NL FLG
The AM82731-001 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.
MINIMUM
DIM
MAXIMUM
inches / mm
inches / mm
A
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.030 / 0.76
A
B
C
D
E
F
G
H
I
FEATURES INCLUDE:
.025 x 45°
4x .062 x 45°
2X B
F
.396 / 10.06
.130 / 3.30
.407 / 10.34
ØD
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
C
E
.193 / 4.90
.450 / 11.43
.125 / 3.18
G
H
L
I
J
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
J
K
K
L
P
N
MAXIMUM RATINGS
M
N
P
M
0.45 A
34 V
IC
VCC
PDISS
TJ
11.5 W @ TC = 25 °C
-65 °C to+250 °C
-65 °C to+200 °C
13.0 °C/W
TSTG
θJC
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1.0 mA
IC = 1.0 mA
VCE = 30 V
IE = 1.0 mA
VCE = 5 V
45
V
BVCER
ICES
RBE = 10 Ω
45
V
0.5
mA
V
BVEBO
hFE
3.5
10
IC = 100 mA
---
POUT
1.0
27
5.2
1.1
30
5.6
W
%
dB
VCE = 30 V
PIN = 0.3 W
f = 2.7 to 3.1 GHz
ηC
PG
Note: Pulse Width = 100 μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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