ASI10519 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10519 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASAT20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG(A)
The ASI ASAT20 is Designed for
A
.020 x 45°
Ø .130 NOM.
.050 x 45°
FEATURES:
L
D
C
B
·
·
M
E
· Omnigold™ Metalization System
F
G
H
J
K
MAXIMUM RATINGS
I
IC
3.0 A
45 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.055 / 1.40
.065 / 1.65
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.124 / 3.15
.243 / 6.17
.635 / 16.13
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 / 1.91
.253 / 6.43
15 V
.665 / 16.89
.565 / 14.35
.749 / 19.02
.325 / 8.26
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.255 / 6.48
3.0 V
37.2 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.0 OC/W
J
K
L
.245 / 6.22
TSTG
qJC
.092 / 2.34
M
ORDER CODE: ASI10519
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 5.0 mA
IC = 5.0 mA
IE = 5.0 mA
VCE = 5.0 V
45
12
3.0
15
V
BVCEO
BVEBO
hFE
V
V
IC = 1.0 A
150
20
---
COB
VCB = 28 V
VCE = 28 V
f = 1.0 MHz
pF
PG
9.2
45
dB
%
POUT = 20 W
f = 1.65 GHz
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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