ASI2223-20_07 [ASI]

NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
ASI2223-20_07
型号: ASI2223-20_07
厂家: ADVANCED SEMICONDUCTOR    ADVANCED SEMICONDUCTOR
描述:

NPN SILICON RF POWER TRANSISTOR
NPN硅射频功率晶体管

晶体 晶体管 射频
文件: 总1页 (文件大小:18K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ASI2223-20  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .310 2L FLG  
A
.040 x 45°  
C
4x .062 x 45°  
The ASI 2223-20 is a Common Base  
Device Designed for Pulsed S-Band  
Radar Amplifier Applications  
2 x B  
D
Ø E  
F
G
H
I
J
K
FEATURES:  
L
M
Internal Input/Output Matching Networks  
Emitter Balasting  
Omnigold™ Metalization System  
R
P
N
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.095 / 2.41  
.100 / 2.54  
.050 / 1.27  
.286 / 7.26  
.110 / 2.79  
.306 / 7.77  
.105 / 2.67  
.120 / 3.05  
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS  
.306 / 7.77  
.130 / 3.30  
.318 / 8.08  
3.0 A  
25 V  
IC  
VCC  
PDISS  
TJ  
.148 / 3.76  
.400 / 10.16  
.119 / 3.02  
.552 / 14.02  
.790 / 20.07  
.300 / 7.62  
.003 / 0.08  
.052 / 1.32  
.118 / 3.00  
.572 / 14.53  
.810 / 20.57  
.320 / 8.13  
.006 / 0.15  
.072 / 1.83  
.131 / 3.33  
.230 / 5.84  
J
55 W @ TC 50 °C  
-65 °C to +200 °C  
-65 °C to +200 °C  
2.7 °C/W  
K
L
M
N
P
R
TSTG  
θJC  
ORDER CODE: ASI10533  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 12 mA  
IC = 25 mA  
IE = 2.5 mA  
45  
V
BVCER  
BVEBO  
ICBO  
RBE = 10 Ω  
45  
V
3.5  
V
V
CB = 22 V  
CE = 5.0 V  
2.5  
mA  
---  
hFE  
V
IC = 2.0 A  
30  
300  
7.0  
40  
PG  
dB  
%
VCC = 22 V  
POUT = 20 W  
f = 2.2 – 2.3 GHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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