ASI30304 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI30304 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC3005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG
A
The MSC3005 is Designed for Class
"C" Amplifier Applications up to 3 GHz.
C
ØD
.060 x 45°
CHAMFER
C
B
E
FEATURES:
Base is connected to flange
E
F
• POUT = 5.0 W Typ. at 3 GHz
• Common Base Configuration
• Omnigold™ Metellization System
G
H
I
J
L
K
P
N
M
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
MAXIMUM RATINGS
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.032 / 0.81
A
B
C
D
E
F
G
H
I
700 mA
IC
VCB
PDISS
TJ
.255 / 6.48
.132 / 3.35
.125 / 3.18
.117 / 2.97
30 V
.110 / 2.79
.117 / 2.97
17 W @ TC = 25 OC
-65 OC to +200 OC
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
J
K
L
-65 OC to +200 OC
8.5 OC/W
M
N
P
TSTG
θJC
ASI ORDER CODE: ASI30304
CHARACTERISTICS TC = 25 O
C
NONE
SYMBOL
BVCER
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
45
V
IC = 5.0 mA
IC = 1.0 mA
IE = 1.0 mA
VCB = 28 V
VCE = 5.0 V
RBE = 10Ω
45
BVCBO
BVEBO
ICBO
V
3.5
V
0.5
mA
---
IC = 500 mA
POUT = 4.5 W
20
120
hFE
VCB = 28 V
VCC = 28 V
f = 1.0 MHz
f = 3.0 GHz
7.5
COB
pF
4.5
30
5.0
35
PG
dB
%
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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