ASISD1530-7 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASISD1530-7 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASI SD1530-7
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1530-7 is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
· Gold Metalization
PACKAGE STYLE 250 2L FLG (A)
· Input Matching
· Broad Band Performance
MAXIMUM RATINGS
IC
2.5 A
VCES
PDISS
TJ
55 V
125 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
1.4 OC/W
TSTG
qJC
1 = COLLECTOR
2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 75 mA
IE = 25 mA
VCE = 5.0 V
55
4.0
10
V
BVEBO
hFE
V
IC = 300 mA
Pout = 25 W
---
PG
VCC = 50 V
fo = 960 to 1215 MHz
DUTY CYCLE = 1.0%
8.5
10
45
dB
%
PULSE WIDTH = 10 mS
h C
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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