C12D6C103K1RACTU [ASI]
Silicon MOSFET Technology;
| 型号： | C12D6C103K1RACTU |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | Silicon MOSFET Technology |
| 文件： | 总5页 (文件大小：2101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PACKAGE
FEATURES
Silicon MOSFET Technology
Operation from 24V to 50V
High Power Gain
Extreme Ruggedness
Internal Input and Output Matching
Excellent Thermal Stability
All Gold Bonding Scheme
Pb-free and RoHS Compliant
TYPICAL PERFORMANCE
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
EFFICIENCY IRL
(%)
(dB)
Class AB
1150
50
100
250
19.5
48
20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.
DESCRIPTION
2
The high power HVV1012- 50 device is an enhancement mode RF MOSFET power
transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The
high voltage MOSFET technology produces over 50W of pulsed output power while
2
offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical
device structure assures high reliability and ruggedness as the device is specified to
withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250
Evaluation Kit Part Number: HVV1012-250-EK
REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
Specifications are subject to change without notice.
>LL'&'(#(+&
(+&ꢀMWjji"ꢀ+&L"ꢀ'&(+#''+&C>p
ELECTRICAL CHARACTERISTICS
Symbol Parameter
Conditions
Drain-Source Breakdown VGS=0V,ID=5mA
Min
95
Typical Max
102
Unit
V
BR(DSS)
-
V
I
DSS
Drain Leakage Current
VGS=0V,VDS=48V
-
50
200
A
I
G
IRL1
GSS
1
Gate Leakage Current
Power Gain
Input Return Loss
VGS=5V,VDS=0V
F=1150MHz
F=1150MHz
F=1150MHz
VDD=50V,IDQ=100mA
VDD=5V, ID=300 A
-
17.5
-
46
1.1
0.7
1
5
-
-4
-
1.8
1.7
A
dB
dB
%
V
P
19.5
-7
48
1.45
1.2
1
D
VGS(Q)2 Gate Quiescent Voltage
VTH Threshold Voltage
V
PULSE CHARACTERISTICS
Symbol Parameter
Tr1
Tf1
Conditions
F=1150MHz
F=1150MHz
Min
Typical Max
Unit
Rise Time
Fall Time
-
-
-
<40
<15
0.25
50
nS
nS
dB
50
PD1
Pulse Droop
F=1150MHz
0.5
THERMAL CHARACTERISTICS
RUGGEDNESS PERFORMANCE
1NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10%
point of the pulse with pulse width = 10μsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad-
band matched test xture.
2NOTE: Amount of gate voltage required to attain nominal quiescent current.
>LL'&'(#(+&
(+&ꢀMWjji"ꢀ+&L"ꢀ'&(+#''+&C>p
>LL'&'(#(+&
(+&ꢀMWjji"ꢀ+&L"ꢀ'&(+#''+&C>p
Demonstration Board Outline
Demonstration Circuit Board Picture
PACKAGE DIMENSIONS
DRAIN
GATE
SOURCE
ASI
PART NUMBER
JDATE CODE
inches
mm
Note: Drawing is not actual size.
ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
does not give any representations or warranties, either express or implied, as
reliable. However, ASI
to
the accuracy or completeness of such information and shall have no liability no liability for conse-
-quences resulting from the use of such information. No license, either expressed or implied, is conveyed
property rights, including any patent rights.
any ASI intellectual
under
相关型号：
©2020 ICPDF网 联系我们和版权申明