CBSL60B_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL60B_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL60B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL60B is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
PACKAGE STYLE .450 BAL FLG (A)
.060x45°
B
FULL R
A
.100x45°
FEATURES:
C
E
D
P
• Internal Input/Output Matching Networks
• PG = 8.5 dB at 60 W/960 MHz
• Omnigold™ Metalization System
F
G
H
J
K
N
M
MAXIMUM RATINGS
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
8.0 A
IC
.055 / 1.40
.230 / 5.84
A
B
C
D
E
F
.120 / 3.05
.130 / 3.30
.785 / 19.94
.465 / 11.81
.130 / 3.30
60 V
28 V
VCBO
VCEO
VEBO
PDISS
TJ
.455 / 11.56
.120 / 3.05
.838 / 21.28
.850 / 21.59
1.105 / 28.07
.535 / 13.59
.005 / 0.15
.065 / 1.65
.095 / 2.41
.195 / 4.95
.455 / 11.56
3.5 V
G
H
J
1.095 / 27.81
.525 / 13.34
.002 / 0.05
.055 / 1.40
.080 . 2.03
146 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.2 °C/W
K
L
M
N
P
.445 / 11.30
TSTG
θJC
ORDER CODE: ASI10584
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IE = 20 mA
VCE = 25 V
60
V
28
BVCEO
BVEBO
ICEO
V
3.5
V
30
80
mA
---
V
CE = 5.0 V
IC =3.0 A
25
hFE
VCC = 26 V
POUT = 60 W
ICQ = 2 X 200 mA
f = 960 MHz
f = 960 MHz
8.5
5:1
PG
dB
---
VCC = 26 V
VSRW
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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