HF150-50F_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF150-50F_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50S is a 50 V epitaxial
transistor designed for SSB communications.
The device utilizes emitter ballastiong for
ruggedness.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
C
Ø.125 NOM.
FULL R
C
E
B
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
• Common Emitter configuration
B
E
E
D
F
G
H
K
J
I
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
IC
10 A
110 V
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
VCBO
VCEO
VEBO
PDISS
TJ
.245 / 6.22
.255 / 6.48
.720 / 18.28
.7.30 / 18.54
55 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
4.0 V
233 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.75 °C/W
J
K
L
.980 / 24.89
TSTG
θJC
ORDER CODE: ASI10612
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 10 mA
110
110
55
V
BVCES
BVCEO
BVEBO
ICEO
V
V
4.0
V
V
V
V
CE = 30 V
CE = 60 V
CE = 6 V
5
5
mA
mA
---
ICES
hFE
IC = 1.4 A
18
43.5
Cob
VCB = 50 V
f = 1.0 MHz
220
pF
GP
14
37
dB
V
CE = 50 V
ICQ =100 mA
POUT = 150 W(PEP)
f2 = 30.001 MHz
-30
IMD3
ηC
dBc
%
f1 = 30.000 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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