HF20-12S [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF20-12S |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF20-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF20-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
C
B
· PG = 18 dB min. at 20 W/30 MHz
· IMD3 = -30 dBc max. at 20 W(PEP)
· Omnigold™ Metalization System
E
E
ØC
B
I
D
H
J
MAXIMUM RATINGS
G
#8-32 UNC-2A
F
IC
4.5 A
36 V
E
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
18 V
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
4.0 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.2 OC/W
TSTG
qJC
J
ORDER CODE: ASI10595
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
BVCES
BVCEO
BVEBO
ICES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IC = 50 mA
IE = 5.0 mA
VCE = 15 V
VCE = 5.0 V
36
V
36
V
18
V
4.0
V
5
mA
---
hFE
IC = 1.0 A
10
15
200
Cob
VCB = 12.5 V
f = 1.0 MHz
f = 30 MHz
100
18
pF
GP
dB
VCC = 12.5 V
ICQ =25 mA
IMD3
-30
dBc
POUT = 20 W (PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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