HF220-50 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF220-50 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF220-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF220-50 is Designed for
High Linearity Class AB HF Power
Amplifier Applications up to 30 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
L
FEATURES:
A
Ø.125 NOM.
FULL R
C
C
E
· PG = 14 dB Typical at 220 W/30 MHz
· IMD3 = -32 dBc Typ. at 220 W(PEP)
· Omnigold™ Metalization System
B
B
E
E
D
F
G
H
K
J
MAXIMUM RATINGS
I
IC
12 A
110 V
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.125 / 3.18
.125 / 3.18
.245 / 6.22
.255 / 6.48
55 V
.720 / 18.28
.7.30 / 18.54
4.0 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
320 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.7 OC/W
J
K
L
.980 / 24.89
TSTG
qJC
ORDER CODE: ASI10614
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
BVCEO
BVEBO
ICEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IE = 20 mA
VCE = 30 V
VCE = 55 V
VCE = 6 V
110
V
55
V
4.0
V
5
mA
mA
---
ICES
10
80
hFE
IC = 10 A
15
Cob
VCB = 50 V
f = 1.0 MHz
330
-32
pF
GP
13
40
dB
-30
VCE = 50 V
ICQ =150 mA
POUT = 220 W(PEP)
IMD3
h C
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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