HF30-28S_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管型号: | HF30-28S_07 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总2页 (文件大小:20K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is a 28 V epitaxial
RF NPN planar transistor designed
primarily for SSB communications.
The device utilizes emitter ballasting
for improved ruggedness and
reliability.
PACKAGE STYLE .380 4L STUD
A
.112x45°
C
B
E
E
FEATURES:
ØC
B
• PG = 20 dB min. at 30 W/30 MHz
• IMD3 = -30 dBc max. at 30 W(PEP)
• Omnigold™ Metalization System
I
D
H
J
G
#8-32 UNC-2A
F
E
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
IC
5.0 A
65 V
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
VCB
VCE
VEBO
PDISS
TJ
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
35 V
4.0 V
60 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.9 °C/W
J
ORDER CODE: ASI10605
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 200 mA
IC = 200 mA
IE = 10 mA
65
65
35
4.0
---
---
V
BVCES
BVCEO
BVEBO
ICES
---
V
---
V
---
V
V
V
V
CE = 30 V
CE = 30 V
CE = 5.0 V
10
mA
mA
---
ICBO
---
100
200
hFE
IC = 500 mA
5.0
COB
VCB = 30V
f = 1.0 MHz
---
65
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
HF30-28F
GP
ηC
718
60
dB
%
VCE = 28 V
POUT = 30 W(PEP)
PIN = 0.48 W
f = 30 MHz
-28
dBc
IMD3
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2
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