HF50-12 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF50-12 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF50-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt
Class AB and Class C Power Amplifier
Applications Operating in the 2 to 32
MHz HF Band.
FEATURES INCLUDE:
· High Gain, 16 dB Typical @ 30 MHz
· Emitter Ballasting
· Withstands Severe Mismatch
MAXIMUM RATINGS
PACKAGE STYLE .380" 4L FLANGE
IC
VCB
VCE
VEB
PDISS
TJ
10 A
36 V
18 V
4.0 V
175 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.0 OC/W
TSTG
qJC
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCES
BVCEO
BVEBO
ICES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
36
IC = 100 mA
IC = 100 mA
IE = 10 mA
VCE = 15 V
VCE = 5.0 V
VCB = 12.5 V
V
18
V
4.0
V
10
mA
---
20
15
hFE
IC = 5.0 A
200
16
Cob
f = 1.0 MHz
pF
dB
GPE
VCC = 12.5 V
ICQ = 50 mA
POUT = 50 W(PEP)
f = 30 MHz
55
-30
h
IMD
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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