HSCH5531 [ASI]
BEAM LEAD SCHOTTKY DIODE; 梁式引线肖特基二极管
| 型号： | HSCH5531 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | BEAM LEAD SCHOTTKY DIODE |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSCH5531
BEAM LEAD SCHOTTKY DIODE
DESCRIPTION:
PACKAGE STYLE 711
The ASI HSCH5531 is a Low Barrier
Beam Lead Schottky Diode Designed
for K-Band Mixer Applications.
MAXIMUM RATINGS
25 mA
4.0 V
IF
VR
150 mW @ TA = 25 °C
-65 °C to +175 °C
-65 °C to +200 °C
PDISS
TJ
TSTG
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
VBR
VF
4.0
IR = 10 µA
IF = 1.0 mA
IF = 1.0 mA
VR = 1.0 V
IF = 5.0 mA
IF = 5.0 mA
375
10
mV
mV
nA
Ω
∆VF
IR
100
20
RD
∆RD
3.0
Ω
CT
VR = 0 V
VR = 0 V
f = 1.0 MHz
f = 1.0 MHz
0.10
0.02
pF
pF
∆CT
TSS
γ
-46
17
dBm
mV/µW
MΩ
Zero Bias, Zero Bias,
PIN = -30 dBm
Video Badwidth = 2.0 MHz
f = 10 GHz
RL = 10 MΩ
RV
1.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
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