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元器件品牌
HVV1011-180L
[ASI]
Excellent Ruggedness;
元器件型号:
HVV1011-180L
生产厂家:
ADVANCED SEMICONDUCTOR
描述和应用:
Excellent Ruggedness
PDF文件:
总3页 (文件大小:524K)
下载文档:
下载PDF数据表文档文件
型号参数:HVV1011-180L参数
查看货源
HVV1011-300
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
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29
HVVI
HVV1011-300-EK
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
Warning
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156
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37
HVVI
HVV1011-500L
50V Supply Voltage
Warning
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156
-
1
ASI
HVV1011-600
Silicon MOSFET Technology
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156
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1
ASI
HVV1011-600-EK
Silicon MOSFET Technology
Warning
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156
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1
ASI
HVV1012-060
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
Warning
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37
HVVI
HVV1012-100
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
Warning
: Undefined variable $rtag in
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42
HVVI
HVV1012-250
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Warning
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156
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41
HVVI
HVV1012-250-EK
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
Warning
: Undefined variable $rtag in
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156
-
16
HVVI
HVV1012-550
Excellent Thermal Stability
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156
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1
ASI
HVV1012-550-EK
Excellent Thermal Stability
Warning
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156
-
1
ASI
HVV1214-025
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
Warning
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42
HVVI
HVV1214-025S
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
Warning
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18
HVVI
HVV1214-075
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
Warning
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31
HVVI
HVV1214-100
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
Warning
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on line
156
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26
HVVI
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