MRA1417-11 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管![MRA1417-11](http://pdffile.icpdf.com/pdf1/p00180/img/icpdf/MRA14_1014246_icpdf.jpg)
型号: | MRA1417-11 |
厂家: | ![]() |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总1页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MRA1417-11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-11 is a Common
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
PACKAGE STYLE 250 2L FLG (C)
• Gold Metallization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
4.0 A
50 V
IC
VCBO
PDISS
TJ
12 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
4.5 °C/W
TSTG
θJC
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 80 mA
IE = 1.0 mA
VCB = 28 V
50
V
3.5
BVEBO
ICBO
V
2.0
mA
---
V
CE = 5.0 V IC = 4.0 A
10
100
hFE
VCB = 28 V
f = 1.0 MHz
12
Cob
pF
7.4
45
PG
dB
%
VCE = 28 V POUT = 11 W
f = 1700 MHz
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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