MRF646 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF646 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF646
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 6L FLG
The ASI MRF646 is designed for 12.5
UHF large signal applications up to
512 MHz.
A
C
1
3
2x ØN
FULL R
D
G
FEATURES:
2
4
• Internal Input Matching Network
• PG = 4.8 dB at 45 W/470 MHz
• Omnigold™ Metalization System
• Common Emitter, 12.5 V operation
B
E
.725/18,42
F
M
K
H
I
L
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
MAXIMUM RATINGS
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
9.0 A
36 V
IC
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
VCBO
VCEO
VEBO
PDISS
TJ
16 V
.125 / 3.18
4.0 V
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
117 W @ TC = 25°C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
K
L
M
N
.120 / 3.05
TSTG
θJC
1 = COLLECTOR
2 = BASE
3&4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 20 mA
IE = 5.0 mA
16
V
36
BVCES
BVEBO
ICES
V
4.0
V
V
V
V
CE = 15 V
10
mA
---
pF
CE = 5.0 V
CB = 12.5 V
IC = 4.0 A
20
150
125
hFE
f = 1.0 MHz
f = 470 MHz
90
Cob
4.8
55
5.4
60
PG
dB
%
VCE = 12.5 V
POUT = 45 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
相关型号：
MRF6522-60
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360B-04, 3 PIN
MOTOROLA
©2020 ICPDF网 联系我们和版权申明