VMB100-12 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | VMB100-12 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VMB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 6L FLG
A
C
The ASI VMB100-12 is Designed for
2x ØN
FULL R
FEATURES:
D
·
B
E
·
.725/18,42
F
· Omnigold™ Metalization System
G
M
K
H
I
L
J
MAXIMUM RATINGS
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
IC
20 A
36 V
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
VCBO
VCEO
VEBO
PDISS
TJ
18 V
4.0 V
.125 / 3.18
.725 / 18.42
270 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.65 OC/W
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
K
L
M
N
.120 / 3.05
TSTG
qJC
ORDER CODE: ASI10747
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 100 mA
IC = 100 mA
IE = 10 mA
VCE = 15 V
VCE = 5.0 V
36
36
18
4.0
V
BVCES
BVCEO
BVEBO
ICES
V
V
V
15
---
mA
---
hFE
IC = 5.0 A
20
COB
VCB = 12.5 V
MHz
f = 1.0
400
pF
10
PG
dB
%
VCE = 12.5 V
POUT = 100 W
f = 88 MHz
60
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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