AT24C16B [ATMEL]

Two-wire Serial EEPROM; 两线串行EEPROM
AT24C16B
型号: AT24C16B
厂家: ATMEL    ATMEL
描述:

Two-wire Serial EEPROM
两线串行EEPROM

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总20页 (文件大小:502K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
Low-voltage and Standard-voltage Operation  
– 1.8 (VCC = 1.8V to 3.6V)  
Internally Organized 2048 x 8 (16K)  
Two-wire Serial Interface  
Schmitt Trigger, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
1 MHz (3.6V, 2.7V, 2.5V), 400 kHz (1.8V) Compatibility  
Write Protect Pin for Hardware Data Protection  
16-byte Page (16K) Write Modes  
Partial Page Writes Allowed  
Self-timed Write Cycle (5 ms max)  
High-reliability  
– Endurance: 1 Million Write Cycles  
– Data Retention: 100 Years  
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra  
Thin Mini-MAP (MLP 2x3), 5-lead SOT23,  
8-lead TSSOP and 8-ball dBGA2 Packages  
Lead-free/Halogen-free  
Two-wire  
Serial EEPROM  
16K (2048 x 8)  
Die Sales: Wafer Form, Waffle Pack and Bumped Wafers  
AT24C16B  
Description  
The AT24C16B provides 16384 bits of serial electrically erasable and programmable  
read-only memory (EEPROM) organized as 2048 words of 8 bits each. The device is  
optimized for use in many industrial and commercial applications where low-power  
and low-voltage operation are essential. The AT24C16B is available in space-saving  
Preliminary  
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), 5-lead  
SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire  
serial interface. In addition, the AT24C16B is available in 1.8V (1.8V to 3.6V) version.  
Table 1. Pin Configuration  
8-lead Ultra Thin  
Mini-MAP (MLP 2x3)  
Pin Name  
A0 - A2  
SDA  
Function  
8-ball dBGA2  
No Connect  
Serial Data  
Serial Clock Input  
Write Protect  
No Connect  
Ground  
VCC 8  
WP 7  
1 A0  
2 A1  
3 A2  
4 GND  
8
7
6
5
1
2
3
4
A0  
VCC  
WP  
A1  
SCL 6  
SDA 5  
A2  
SCL  
SDA  
SCL  
GND  
Bottom View  
Bottom View  
WP  
NC  
8-lead TSSOP  
8-lead SOIC  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
GND  
VCC  
Power Supply  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
GND  
5-lead SOT23  
8-lead PDIP  
8
7
6
5
VCC  
A0  
1
2
3
4
WP  
SCL  
GND  
SDA  
1
2
3
5
WP  
A1  
A2  
SCL  
SDA  
VCC  
4
GND  
5175A–SEEPR–09/06  
Absolute Maximum Ratings  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Operating Temperature..................................–55°C to +125°C  
Storage Temperature.....................................–65°C to +150°C  
Voltage on Any Pin  
with Respect to Ground....................................1.0V to +5.0V  
Maximum Operating Voltage ............................................ 4.3V  
DC Output Current........................................................ 5.0 mA  
Figure 1. Block Diagram  
2
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
Pin Description  
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each  
EEPROM device and negative edge clock data out of each device.  
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is  
open-drain driven and may be wire-ORed with any number of other open-drain or open-  
collector devices.  
DEVICE/PAGE ADDRESSES (A2, A1, A0): The AT24C16B does not use the device  
address pins, which limits the number of devices on a single bus to one. The A0, A1, A2  
are no connects and can be connected to ground.  
WRITE PROTECT (WP): The AT24C16B has a write protect pin that provides hardware  
data protection. The write protect pin allows normal read/write operations when con-  
nected to ground (GND). When the write protect pin is connected to VCC, the write  
protection feature is enabled and operates as shown in Table 2.  
Table 2. Write Protect  
Part of the Array Protected  
WP Pin  
Status  
At VCC  
At GND  
24C16B  
Full (16K) Array  
Normal Read/Write Operations  
Memory Organization AT24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes  
each, the 16K requires an 11-bit data word address for random word addressing.  
3
5175A–SEEPR–09/06  
Table 3. Pin Capacitance(1)  
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V  
Symbol  
CI/O  
Test Condition  
Max  
8
Units  
pF  
Conditions  
VI/O = 0V  
VIN = 0V  
Input/Output Capacitance (SDA)  
Input Capacitance (SCL)  
CIN  
6
pF  
Note:  
1. This parameter is characterized and is not 100% tested.  
Table 4. DC Characteristics  
Applicable over recommended operating range from: TAI = 40°C to +85°C, VCC = +1.8V to +3.6V (unless otherwise noted)  
Symbol  
VCC1  
ICC1  
Parameter  
Test Condition  
Min  
Typ  
Max  
3.6  
2.0  
3.0  
1.0  
3.0  
3.0  
Units  
V
Supply Voltage  
Supply Current  
Supply Current  
1.8  
VCC = 3.6V  
VCC = 3.6V  
VCC = 1.8V  
VCC = 3.6V  
VIN = VCC or VSS  
READ at 400 kHz  
WRITE at 400 kHz  
1.0  
2.0  
mA  
mA  
µA  
ICC2  
Standby Current  
(1.8V option)  
ISB1  
VIN = VCC or VSS  
ILI  
Input Leakage Current  
0.10  
0.05  
µA  
µA  
Output Leakage  
Current  
ILO  
VOUT = VCC or VSS  
3.0  
VIL  
Input Low Level(1)  
Input High Level(1)  
Output Low Level  
Output Low Level  
0.6  
VCC x 0.3  
VCC + 0.5  
0.4  
V
V
V
V
VIH  
VCC x 0.7  
VOL2  
VOL1  
VCC = 3.0V  
VCC = 1.8V  
IOL = 2.1 mA  
IOL = 0.15 mA  
0.2  
Notes: 1. VIL min and VIH max are reference only and are not tested.  
4
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
Table 5. AC Characteristics (Industrial Temperature)  
Applicable over recommended operating range from TAI = 40°C to +85°C, VCC = +1.8V to +3.6V, CL = 100 pF (unless oth-  
erwise noted). Test conditions are listed in Note 2.  
1.8-volt  
Max  
2.5-volt  
Max  
3.6-volt  
Max  
Symbol  
fSCL  
Parameter  
Min  
Min  
Min  
Units  
kHz  
µs  
Clock Frequency, SCL  
Clock Pulse Width Low  
Clock Pulse Width High  
Clock Low to Data Out Valid  
400  
0.9  
1000  
0.55  
1000  
0.55  
tLOW  
1.3  
0.6  
0.4  
0.4  
0.4  
0.4  
tHIGH  
tAA  
µs  
0.05  
0.05  
0.05  
µs  
Time the bus must be free before a  
new transmission can start(1)  
tBUF  
1.3  
0.5  
0.5  
µs  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
Start Hold Time  
0.6  
0.6  
0
0.25  
0.25  
0
0.25  
0.25  
0
µs  
µs  
µs  
ns  
µs  
ns  
µs  
ns  
ms  
Start Set-up Time  
Data In Hold Time  
Data In Set-up Time  
Inputs Rise Time(1)  
Inputs Fall Time(1)  
Stop Set-up Time  
Data Out Hold Time  
Write Cycle Time  
100  
100  
100  
0.3  
0.3  
0.3  
tF  
300  
100  
100  
tSU.STO  
tDH  
0.6  
50  
0.25  
50  
0.25  
50  
tWR  
5
5
5
Write  
Cycles  
Endurance(1)  
25°C, Page Mode, 3.3V  
1,000,000  
Notes: 1. This parameter is characterized and is not 100% tested.  
2. AC measurement conditions:  
RL (connects to VCC): 1.3 kΩ (2.5V, 3.6V), 10 kΩ (1.8V)  
Input pulse voltages: 0.3 VCC to 0.7 VCC  
Input rise and fall times: 50 ns  
Input and output timing reference voltages: 0.5 VCC  
5
5175A–SEEPR–09/06  
Device  
Operation  
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external  
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on  
page 7). Data changes during SCL high periods will indicate a start or stop condition as  
defined below.  
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which  
must precede any other command (see Figure 5 on page 8).  
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a  
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-  
ure 5 on page 8).  
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the  
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each  
word. This happens during the ninth clock cycle.  
STANDBY MODE: The AT24C16B features a low-power standby mode which is enabled: (a)  
upon power-up and (b) after the receipt of the STOP bit and the completion of any internal  
operations.  
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire  
part can be protocol reset by following these steps:  
1. Clock up to 9 cycles.  
2. Look for SDA high in each cycle while SCL is high.  
3. Create a start condition.  
6
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
Bus Timing  
Figure 2. SCL: Serial Clock, SDA: Serial Data I/O®  
Write Cycle Timing  
Figure 3. SCL: Serial Clock, SDA: Serial Data I/O  
SCL  
SDA  
ACK  
8th BIT  
WORDn  
(1)  
t
wr  
START  
STOP  
CONDITION  
CONDITION  
Note:  
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.  
Figure 4. Data Validity  
7
5175A–SEEPR–09/06  
Figure 5. Start and Stop Definition  
Figure 6. Output Acknowledge  
8
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
Device  
Addressing  
The 16K EEPROM device requires an 8-bit device address word following a start condition to  
enable the chip for a read or write operation (refer to Figure 7).  
The device address word consists of a mandatory one, zero sequence for the first four most  
significant bits as shown. This is common to all the EEPROM devices.  
The next 3 bits used for memory page addressing and are the most significant bits of the data  
word address which follows.  
The eighth bit of the device address is the read/write operation select bit. A read operation is  
initiated if this bit is high and a write operation is initiated if this bit is low.  
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not  
made, the chip will return to a standby state.  
Write  
Operations  
BYTE WRITE: A write operation requires an 8-bit data word address following the device  
address word and acknowledgment. Upon receipt of this address, the EEPROM will again  
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit  
data word, the EEPROM will output a zero and the addressing device, such as a microcontrol-  
ler, must terminate the write sequence with a stop condition. At this time the EEPROM enters  
an internally timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during  
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on  
page 11).  
PAGE WRITE: The 16K EEPROM is capable of an 16-byte page write.  
A page write is initiated the same as a byte write, but the microcontroller does not send a stop  
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges  
receipt of the first data word, the microcontroller can transmit up to fifteen data words. The  
EEPROM will respond with a zero after each data word received. The microcontroller must ter-  
minate the page write sequence with a stop condition (see Figure 9 on page 11).  
The data word address lower three bits are internally incremented following the receipt of each  
data word. The higher data word address bits are not incremented, retaining the memory page  
row location. When the word address, internally generated, reaches the page boundary, the  
following byte is placed at the beginning of the same page. If more than sixteen data words  
are transmitted to the EEPROM, the data word address will “roll over” and previous data will  
be overwritten.  
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the  
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a  
start condition followed by the device address word. The read/write bit is representative of the  
operation desired. Only if the internal write cycle has completed will the EEPROM respond  
with a zero allowing the read or write sequence to continue.  
Read  
Operations  
Read operations are initiated the same way as write operations with the exception that the  
read/write select bit in the device address word is set to one. There are three read operations:  
current address read, random address read and sequential read.  
CURRENT ADDRESS READ: The internal data word address counter maintains the last  
address accessed during the last read or write operation, incremented by one. This address  
stays valid between operations as long as the chip power is maintained. The address “roll  
over” during read is from the last byte of the last memory page to the first byte of the first page.  
The address “roll over” during write is from the last byte of the current page to the first byte of  
the same page.  
9
5175A–SEEPR–09/06  
Once the device address with the read/write select bit set to one is clocked in and acknowl-  
edged by the EEPROM, the current address data word is serially clocked out. The  
microcontroller does not respond with an input zero but does generate a following stop condi-  
tion (see Figure 10 on page 11).  
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data  
word address. Once the device address word and data word address are clocked in and  
acknowledged by the EEPROM, the microcontroller must generate another start condition.  
The microcontroller now initiates a current address read by sending a device address with the  
read/write select bit high. The EEPROM acknowledges the device address and serially clocks  
out the data word. The microcontroller does not respond with a zero but does generate a fol-  
lowing stop condition (see Figure 11 on page 12).  
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-  
dom address read. After the microcontroller receives a data word, it responds with an  
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment  
the data word address and serially clock out sequential data words. When the memory  
address limit is reached, the data word address will “roll over” and the sequential read will con-  
tinue. The sequential read operation is terminated when the microcontroller does not respond  
with a zero but does generate a following stop condition (see Figure 12 on page 12).  
10  
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
Figure 7. Device Address  
P
P
P
16  
2
1
0
MSB  
Figure 8. Byte Write  
Figure 9. Page Write  
Figure 10. Current Address Read  
11  
5175A–SEEPR–09/06  
Figure 11. Random Read  
Figure 12. Sequential Read  
12  
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
AT24C16B Ordering Information  
Ordering Codes  
Voltage  
Package  
Operating Range  
AT24C16B-PU (Bulk Form Only)  
AT24C16BN-SH-B(1) (NiPdAu Lead Finish)  
AT24C16BN-SH-T(2) (NiPdAu Lead Finish)  
AT24C16B-TH-B(1) (NiPdAu Lead Finish)  
AT24C16B-TH-T(2) (NiPdAu Lead Finish)  
AT24C16BY6-YH-T(2) (NiPdAu Lead Finish)  
AT24C16BTSU-T(2)  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
8P3  
8S1  
8S1  
Lead-Free  
Halogen-Free  
Industrial Temperature  
(-40°C to 85°C)  
8A2  
8A2  
8Y6  
5TS1  
8U3-1  
AT24C16BU3-UU-T(2)  
Industrial Temperature  
(-40°C to 85°C)  
AT24C16B-W-11(3)  
1.8  
Die Sales  
Notes: 1. “-B” denotes bulk.  
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, SOT23, dBGA2 = 5K per reel.  
3. Available in waffle pack, tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon  
request. Please contact Serial EEPROM Marketing.  
Package Type  
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)  
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)  
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)  
8-lead, 2.0 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)  
5-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23)  
8-ball, die Ball Grid Away Package (dBGA2)  
8P3  
8S1  
8A2  
8Y6  
5TS1  
8U3-1  
Options  
1.8  
Low-voltage (1.8V to 3.6V)  
13  
5175A–SEEPR–09/06  
Packaging Information  
8P3 – PDIP  
E
1
E1  
N
Top View  
c
eA  
End View  
COMMON DIMENSIONS  
(Unit of Measure = inches)  
D
e
MIN  
MAX  
0.210  
0.195  
0.022  
0.070  
0.045  
0.014  
0.400  
NOM  
NOTE  
SYMBOL  
D1  
A2 A  
A
2
A2  
b
0.115  
0.014  
0.045  
0.030  
0.008  
0.355  
0.005  
0.300  
0.240  
0.130  
0.018  
0.060  
0.039  
0.010  
0.365  
5
6
6
b2  
b3  
c
D
3
3
4
3
b2  
L
D1  
E
b3  
4 PLCS  
0.310  
0.250  
0.100 BSC  
0.300 BSC  
0.130  
0.325  
0.280  
b
E1  
e
Side View  
eA  
L
4
2
0.115  
0.150  
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.  
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.  
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.  
4. E and eA measured with the leads constrained to be perpendicular to datum.  
5. Pointed or rounded lead tips are preferred to ease insertion.  
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).  
01/09/02  
TITLE  
DRAWING NO.  
REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8P3, 8-lead, 0.300" Wide Body, Plastic Dual  
In-line Package (PDIP)  
8P3  
B
R
14  
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
8S1 – JEDEC SOIC  
C
1
E
E1  
L
N
Top View  
End View  
e
B
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
0.51  
0.25  
5.00  
3.99  
6.20  
C
D
E1  
E
D
Side View  
e
1.27 BSC  
L
0.40  
0˚  
1.27  
8˚  
Note:  
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.  
10/7/03  
REV.  
TITLE  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing  
8S1  
B
R
Small Outline (JEDEC SOIC)  
15  
5175A–SEEPR–09/06  
8A2 – TSSOP  
3
2 1  
Pin 1 indicator  
this corner  
E1  
E
L1  
N
L
Top View  
End View  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
NOM  
3.00  
NOTE  
SYMBOL  
D
2.90  
3.10  
2, 5  
A
b
E
6.40 BSC  
4.40  
E1  
A
4.30  
4.50  
1.20  
1.05  
0.30  
3, 5  
A2  
b
0.80  
0.19  
1.00  
e
A2  
4
D
e
0.65 BSC  
0.60  
L
0.45  
0.75  
Side View  
L1  
1.00 REF  
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,  
datums, etc.  
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed  
0.15 mm (0.006 in) per side.  
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm  
(0.010 in) per side.  
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the  
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between  
protrusion and adjacent lead is 0.07 mm.  
5. Dimension D and E1 to be determined at Datum Plane H.  
5/30/02  
DRAWING NO.  
TITLE  
REV.  
8A2, 8-lead, 4.4 mm Body, Plastic  
Thin Shrink Small Outline Package (TSSOP)  
2325 Orchard Parkway  
San Jose, CA 95131  
B
8A2  
R
16  
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
8Y6 - Mini Map  
A
D2  
b
(88XX)  
Pin 1  
Indeexx  
Area  
Pin 1 ID  
L (88XX))  
D
e ((66XX))  
A2  
A1  
1..550 REF..  
A3  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
MIN  
MAX  
NOM  
2.00 BSC  
3.00 BSC  
1.50  
NOTE  
SYMBOL  
D
E
D2  
E2  
A
1.40  
1.60  
1.40  
0.60  
0.05  
0.55  
-
-
-
-
A1  
A2  
A3  
L
0.0  
-
0.02  
-
0.20 REF  
0.30  
0.20  
0.20  
0.40  
0.30  
e
0.50 BSC  
0.25  
b
2
Notes:  
1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,  
tolerances, datums, etc.  
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the  
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.  
8/26/05  
TITLE  
DRAWING NO. REV.  
2325 Orchard Parkway  
San Jose, CA 95131  
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,  
Dual No Lead Package (DFN), (MLP 2x3)  
8Y6  
C
R
17  
5175A–SEEPR–09/06  
5TS1 – SOT23  
e1  
C
4
5
E1  
C
E
L
L1  
1
3
2
End View  
Top View  
b
A2  
A
Seating  
Plane  
A1  
e
D
COMMON DIMENSIONS  
(Unit of Measure = mm)  
Side View  
MIN  
MAX  
1.10  
0.10  
1.00  
0.20  
NOM  
NOTE  
SYMBOL  
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing  
MO-193, Variation AB, for additional information.  
A
2. Dimension D does not include mold flash, protrusions, or gate burrs.  
A1  
A2  
c
0.00  
0.70  
0.08  
Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end.  
Dimension E1 does not include interlead flash or protrusion. Interlead  
flash or protrusion shall not exceed 0.15 mm per side.  
3. The package top may be smaller than the package bottom. Dimensions  
D and E1 are determined at the outermost extremes of the plastic body  
exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but  
including any mismatch between the top and bottom of the plastic body.  
4. These dimensions apply to the flat section of the lead between 0.08 mm  
and 0.15 mm from the lead tip.  
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar  
protrusion shall be 0.08 mm total in excess of the "b" dimension at  
maximum material condition. The Dambar cannot be located on the lower  
radius of the foot. Minimum space between protrusion and an adjacent lead  
shall not be less than 0.07 mm.  
0.90  
4
D
2.90 BSC  
2.80 BSC  
1.60 BSC  
0.60 REF  
0.95 BSC  
1.90 BSC  
2, 3  
2, 3  
2, 3  
E
E1  
L1  
e
e1  
b
0.30  
0.50  
4, 5  
6/25/03  
TITLE  
REV.  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink  
Small Outline Package (SHRINK SOT)  
R
PO5TS1  
A
18  
AT24C16B Preliminary  
5175A–SEEPR–09/06  
AT24C16B Preliminary  
8U3-1 – dBGA2  
E
D
1.  
b
A1  
PIN 1 BALL PAD CORNER  
A2  
Top View  
A
PIN 1 BALL PAD CORNER  
Side View  
1
2
3
4
(d1)  
d
7
6
5
8
e
COMMON DIMENSIONS  
(Unit of Measure = mm)  
(e1)  
MIN  
0.71  
0.10  
0.40  
0.20  
MAX  
0.91  
0.20  
0.50  
0.30  
NOM  
0.81  
NOTE  
SYMBOL  
Bottom View  
8 SOLDER BALLS  
A
A1  
A2  
b
0.15  
0.45  
0.25  
D
1.50 BSC  
2.00 BSC  
0.50 BSC  
0.25 REF  
1.00 BSC  
0.25 REF  
1. Dimension “bis measured at the maximum solder ball diameter.  
This drawing is for general information only.  
E
e
e1  
d
d1  
6/24/03  
TITLE  
REV.  
DRAWING NO.  
1150 E. Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906  
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,  
PO8U3-1  
A
R
Small Die Ball Grid Array Package (dBGA2)  
19  
5175A–SEEPR–09/06  
Atmel Corporation  
Atmel Operations  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 487-2600  
Memory  
RF/Automotive  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
Tel: (49) 71-31-67-0  
Fax: (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
Regional Headquarters  
Microcontrollers  
2325 Orchard Parkway  
San Jose, CA 95131, USA  
Tel: 1(408) 441-0311  
Fax: 1(408) 436-4314  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Europe  
Atmel Sarl  
Route des Arsenaux 41  
Case Postale 80  
CH-1705 Fribourg  
Switzerland  
Tel: (41) 26-426-5555  
Fax: (41) 26-426-5500  
Fax: 1(719) 540-1759  
Biometrics/Imaging/Hi-Rel MPU/  
High Speed Converters/RF Datacom  
Avenue de Rochepleine  
La Chantrerie  
BP 70602  
44306 Nantes Cedex 3, France  
Tel: (33) 2-40-18-18-18  
Fax: (33) 2-40-18-19-60  
BP 123  
38521 Saint-Egreve Cedex, France  
Tel: (33) 4-76-58-30-00  
Fax: (33) 4-76-58-34-80  
Asia  
Room 1219  
Chinachem Golden Plaza  
77 Mody Road Tsimshatsui  
East Kowloon  
Hong Kong  
Tel: (852) 2721-9778  
Fax: (852) 2722-1369  
ASIC/ASSP/Smart Cards  
Zone Industrielle  
13106 Rousset Cedex, France  
Tel: (33) 4-42-53-60-00  
Fax: (33) 4-42-53-60-01  
1150 East Cheyenne Mtn. Blvd.  
Colorado Springs, CO 80906, USA  
Tel: 1(719) 576-3300  
Japan  
9F, Tonetsu Shinkawa Bldg.  
1-24-8 Shinkawa  
Chuo-ku, Tokyo 104-0033  
Japan  
Tel: (81) 3-3523-3551  
Fax: (81) 3-3523-7581  
Fax: 1(719) 540-1759  
Scottish Enterprise Technology Park  
Maxwell Building  
East Kilbride G75 0QR, Scotland  
Tel: (44) 1355-803-000  
Fax: (44) 1355-242-743  
Literature Requests  
www.atmel.com/literature  
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any  
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMELS TERMS AND CONDI-  
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5175A–SEEPR–09/06  

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