AT24C256B-TH-T [ATMEL]
Two-wire Serial EEPROM; 两线串行EEPROM
| 型号： | AT24C256B-TH-T |
| 厂家： | 
ATMEL |
| 描述： | Two-wire Serial EEPROM |
| 文件： | 总24页 (文件大小：720K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Low-voltage and Standard-voltage Operation
– 1.8 (VCC = 1.8V to 5.5V)
• Internally Organized as 32,768 x 8
• Two-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 1 MHz (5.0V, 2.7V, 2.5V), and 400 kHz (1.8V) Compatibility
• Write Protect Pin for Hardware and Software Data Protection
• 64-byte Page Write Mode (Partial Page Writes Allowed)
• Self-timed Write Cycle (5 ms Max)
Two-wire Serial
EEPROM
• High Reliability
– Endurance: One Million Write Cycles
256K (32,768 x 8)
– Data Retention: 40 Years
• Lead-free/Halogen-free Devices Available
• 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, EIAJ SOIC, 8-lead Ultra Thin Small Array
Package (SAP), 8-lead TSSOP, and 8-ball dBGA2 Packages
• Die Sales: Wafer Form, Waffle Pack and Bumped Wafers
AT24C256B
Description
The AT24C256B provides 262,144 bits of serial electrically erasable and programma-
ble read-only memory (EEPROM) organized as 32,768 words of 8 bits each. The
device’s cascadable feature allows up to eight devices to share a common two-wire
bus. The device is optimized for use in many industrial and commercial applications
where low-power and low-voltage operation are essential. The devices are available
in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin SAP, 8-
lead TSSOP, and 8-ball dBGA2 packages. In addition, the entire family is available in
a 1.8V (1.8V to 5.5V) version.
Pin Configurations
8-lead PDIP
8-lead SOIC
1
2
3
4
8
7
6
5
8
7
6
5
A0
A1
VCC
WP
A0
A1
1
2
3
4
VCC
WP
Pin Name
A0–A2
SDA
Function
Address Inputs
Serial Data
Serial Clock Input
Write Protect
Ground
A2
SCL
SDA
A2
SCL
SDA
GND
GND
SCL
8-lead dBGA2
8-lead TSSOP
WP
VCC
8
7
6
5
1
A0
8
A0
A1
A2
1
2
3
4
VCC
GND
WP
SCL
SDA
2
A1
7
6
5
WP
3
4
A2
SCL
SDA
GND
GND
Bottom View
8-lead Ultra Thin SAP
VCC
WP
8
7
6
5
1
2
3
4
A0
A1
A2
SCL
SDA
GND
Rev. 5279C–SEEPR–3/09
Bottom View
1. Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only;
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Operating Temperature.....................................− 55°C to +125°C
Storage Temperature ........................................− 65°C to +150°C
Voltage on Any Pin
with Respect to Ground....................................... − 1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1-1. Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SCL
SDA
SERIAL
CONTROL
LOGIC
EN
H.V. PUMP/TIMING
DATA RECOVERY
LOAD
COMP
DEVICE
ADDRESS
COMPARATOR
LOAD
INC
A2
A1
A0
R/W
DATA WORD
EEPROM
ADDR/COUNTER
Y DEC
SERIAL MUX
DOUT/ACK
LOGIC
DIN
DOUT
2
AT24C256B
5279C–SEEPR–3/09
AT24C256B
2. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive-edge clock data into each EEPROM
device and negative-edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs
that are hardwired (directly to GND or to Vcc) for compatibility with other AT24Cxx devices.
When the pins are hardwired, as many as eight 256K devices may be addressed on a single bus
system. (Device addressing is discussed in detail under “Device Addressing,” page 9.) A device
is selected when a corresponding hardware and software match is true. If these pins are left
floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capaci-
tive coupling that may appear during customer applications, Atmel recommends always
connecting the address pins to a known state. When using a pull-up resistor, Atmel recommends
using 10kΩ or less.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write
operations. When WP is connected directly to Vcc, all write operations to the memory are inhib-
ited. If the pin is left floating, the WP pin will be internally pulled down to GND. However, due to
capacitive coupling that may appear during customer applications, Atmel recommends always
connecting the WP pins to a known state. When using a pull-up resistor, Atmel recommends
using 10kΩ or less.
3. Memory Organization
AT24C256B, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64
bytes each. Random word addressing requires a 15-bit data word address.
Table 3-1.
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Pin Capacitance(1)
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, SCL)
CIN
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
3
5279C–SEEPR–3/09
Table 3-2.
DC Characteristics
Applicable over recommended operating range from: TAI = − 40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
VCC1
ICC1
Parameter
Test Condition
Min
Typ
Max
5.5
2.0
3.0
1.0
6.0
Units
V
Supply Voltage
Supply Current
Supply Current
1.8
VCC = 5.0V
VCC = 5.0V
VCC = 1.8V
READ at 400 kHz
WRITE at 400 kHz
1.0
2.0
mA
mA
µA
ICC2
Standby Current
(1.8V option)
ISB1
VIN = VCC or VSS
VCC = 5.5V
µA
Input Leakage
ILI
V
IN = VCC or VSS
0.10
0.05
3.0
3.0
µA
µA
Current VCC = 5.0V
Output Leakage
Current VCC = 5.0V
ILO
VOUT = VCC or VSS
VIL
Input Low Level(1)
Input High Level(1)
Output Low Level
Output Low Level
− 0.6
VCC x 0.3
VCC + 0.5
0.4
V
V
V
V
VIH
VCC x 0.7
VOL2
VOL1
VCC = 3.0V
VCC = 1.8V
IOL = 2.1 mA
IOL = 0.15 mA
0.2
Notes: 1. VIL min and VIH max are reference only and are not tested.
4
AT24C256B
5279C–SEEPR–3/09
AT24C256B
Table 3-3.
AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from TAI = − 40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-
erwise noted). Test conditions are listed in Note 2.
1.8-volt
Max
2.5, 5.0-volt
Symbol
fSCL
tLOW
tHIGH
ti
Parameter
Min
Min
Max
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time(1)
Clock Low to Data Out Valid
400
1000
1.3
0.6
0.4
0.4
µs
100
0.9
50
ns
tAA
0.05
1.3
0.05
0.5
0.55
µs
Time the bus must be free before a
new transmission can start(1)
tBUF
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
0.6
0.6
0
0.25
0.25
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
Data Out Hold Time
Write Cycle Time
100
100
0.3
0.3
tF
300
100
tSU.STO
tDH
0.6
50
0.25
50
tWR
5
5
Write
Cycles
Endurance(1)
25°C, Page Mode, 3.3V
1,000,000
Notes: 1. This parameter is ensured by characterization and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5.5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
5
5279C–SEEPR–3/09
4. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4-1).
Data changes during SCL high periods will indicate a start or stop condition as defined below.
Figure 4-1. Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that must
precede any other command (see Figure 4-2).
Figure 4-2. Start and Stop Definition
SDA
SCL
START
STOP
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 4-2).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a “0” during the ninth clock cycle to acknowledge
that it has received each word.
STANDBY MODE: The AT24C256B features a low-power standby mode that is enabled upon
power-up and after the receipt of the stop bit and the completion of any internal operations.
6
AT24C256B
5279C–SEEPR–3/09
AT24C256B
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire
part can be protocol reset by following these steps: (a) Create a start bit condition, (b) clock 9
cycles, (c) create another start bit followed by stop bit condition as shown below. The device is
ready for next communication after above steps have been completed.
Figure 4-3. Software Reset
Dummy Clock Cycles
Start bit
Stop bit
Start bit
1
2
3
8
9
SCL
SDA
Figure 4-4. Bus Timing
tHIGH
tF
tLOW
tR
tLOW
SCL
tSU.STA
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
Figure 4-5. Write Cycle Timing
SCL
ACK
SDA
8th BIT
WORDn
(1)
t
wr
START
CONDITION
STOP
CONDITION
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
5279C–SEEPR–3/09
Figure 4-6. Output Acknowledge
1
8
9
SCL
DATA IN
DATA OUT
START
ACKNOWLEDGE
8
AT24C256B
5279C–SEEPR–3/09
AT24C256B
5. Device Addressing
The 256K EEPROM requires an 8-bit device address word following a start condition to enable
the chip for a read or write operation (see Figure 5-1). The device address word consists of a
mandatory “1”, “0” sequence for the first four most significant bits as shown. This is common to
all two-wire EEPROM devices.
Figure 5-1. Device Address
1
0
1
0
A2
A1
A0
R/W
LSB
MSB
The next three bits are the A2, A1, A0 device address bits to allow as many as eight devices on
the same bus. These bits must compare to their corresponding hardwired input pins. The A2,
A1, and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the
pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is ini-
tiated if this bit is high, and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made,
the device will return to a standby state.
DATA SECURITY: The AT24C256B has a hardware data protection scheme that allows the user
to write protect the whole memory when the WP pin is at VCC
.
9
5279C–SEEPR–3/09
6. Write Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0”. The addressing device, such as a microcontroller, must
then terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 6-1).
Figure 6-1. Byte Write
Note:
* = DON’T CARE bit
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a “0” after each data word received. The microcontroller must termi-
nate the page write sequence with a stop condition (see Figure 6-2).
Figure 6-2. Page Write
Note:
* = DON’T CARE bit
The data word address lower six bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the fol-
lowing byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a “0”, allowing the read or write sequence to continue.
10
AT24C256B
5279C–SEEPR–3/09
AT24C256B
7. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to “1”. There are three read operations:
current address read, random address read, and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page, to the first byte of the first page.
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input “0” but does generate a following stop condition (see Figure 7-1).
Figure 7-1. Current Address Read
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a “0” but does generate a following
stop condition (see Figure 7-2).
Figure 7-2. Random Read
Note:
* = DON’T CARE bit
11
5279C–SEEPR–3/09
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a “0” but
does generate a following stop condition (see Figure 7-3).
Figure 7-3. Sequential Read
12
AT24C256B
5279C–SEEPR–3/09
AT24C256B
8. AT24C256B Ordering Codes
Ordering Code
Voltage
Package
Operation Range
AT24C256B-PU (Bulk Form Only)
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8Y7
8U2-1
AT24C256BN-SH-B(1) (NiPdAu Lead Finish)
AT24C256BN-SH-T(2) (NiPdAu Lead Finish)
AT24C256BW-SH-B(1) (NiPdAu Lead Finish)
AT24C256BW-SH-T(2) (NiPdAu Lead Finish)
AT24C256B-TH-B(1) (NiPdAu Lead Finish)
AT24C256B-TH-T(2) (NiPdAu Lead Finish)
AT24C256BY7-YH-T(2) (NiPdAu Lead Finish)
AT24C256BU2-UU-T(2)
Lead-free/Halogen-free
Industrial Temperature
(−40°C to 85°C)
Industrial Temperature
AT24C256B-W-11
1.8
Die Sale
(−40°C to 85°C)
Notes: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP and dBGA2 = 5K per reel. SAP = 3K per reel. EIAJ = 2K per reel.
3. Available in tape & reel and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial Interface Marketing.
Package Type
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.200” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-ball, die Ball Grid Array Package (dBGA2)
8P3
8S1
8S2
8U2-1
8A2
8Y7
8-lead, 4.40 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8-lead, 6.00 mm x 4.90 mm Body, Ultra Thin, Dual Footprint, Non-leaded, Small Array Package (SAP)
Options
−1.8
Low-voltage (1.8V to 5.5V)
13
5279C–SEEPR–3/09
9. Part Marking Scheme
8-PDIP
TOP MARK
Seal Year
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
|
Seal Week
6: 2006
0: 2010
|
|
|
7: 2007
8: 2008
9: 2009
1: 2011
2: 2012
3: 2013
04 = Week 4
:: : :::: :
:: : :::: ::
|---|---|---|---|---|---|---|---|
A
T
M
L
U
Y
W
W
|---|---|---|---|---|---|---|---|
50 = Week 50
52 = Week 52
2
E
B
1
|---|---|---|---|---|---|---|---|
Lot Number
*
Lot Number to Use ALL Characters in Marking
|---|---|---|---|---|---|---|---|
|
BOTTOM MARK
Pin 1 Indicator (Dot)
No Bottom Mark
8-SOIC
TOP MARK
Seal Year
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
|
Seal Week
6: 2006
0: 2010
|
|
|
7: 2007
8: 2008
9: 2009
1: 2011
2: 2012
3: 2013
04 = Week 4
:: : :::: :
:: : :::: ::
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
|---|---|---|---|---|---|---|---|
50 = Week 50
52 = Week 52
2
E
B
1
|---|---|---|---|---|---|---|---|
Lot Number
*
Lot Number to Use ALL Characters in Marking
|---|---|---|---|---|---|---|---|
|
BOTTOM MARK
Pin 1 Indicator (Dot)
No Bottom Mark
14
AT24C256B
5279C–SEEPR–3/09
AT24C256B
8-TSSOP
TOP MARK
Pin 1 Indicator (Dot)
Y = SEAL YEAR
WW = SEAL WEEK
|
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
|---|---|---|---|
1: 2011
2: 2012
3: 2013
*
H
Y
W
W
|---|---|---|---|---|
2
E
B
1
50 = Week 50
52 = Week 52
|---|---|---|---|---|
BOTTOM MARK
|---|---|---|---|---|---|---|
XX = Country of Origin
X
X
|---|---|---|---|---|---|---|
A
A
A
A
A
A
A
|---|---|---|---|---|---|---|
<- Pin 1 Indicator
8-Ultra Thin SAP
TOP MARK
Seal Year
|
|
Seal Week
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
:: : :::: :
:: : :::: ::
50 = Week 50
52 = Week 52
|
|
6: 2006
7: 2007
8: 2008
9: 2009
0: 2010
1: 2011
2: 2012
3: 2013
|---|---|---|---|---|---|---|---|
A
T
M
L
H
Y
W
W
|---|---|---|---|---|---|---|---|
2
E
B
1
|---|---|---|---|---|---|---|---|
Lot Number
|---|---|---|---|---|---|---|---|
*
|
Pin 1 Indicator (Dot)
15
5279C–SEEPR–3/09
dBGA2
TOP MARK
LINE 1------->
LINE 2------->
2EBU
YMTC
|<-- Pin 1 This Corner
Y = ONE DIGIT YEAR CODE
4: 2004
5: 2005
6: 2006
7: 2007
8: 2008
9: 2009
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)
A = JANUARY
B = FEBRUARY
" " """""""
J = OCTOBER
K = NOVEMBER
L = DECEMBER
TC = TRACE CODE
16
AT24C256B
5279C–SEEPR–3/09
AT24C256B
10. Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
–
MAX
0.210
0.195
0.022
0.070
0.045
0.014
0.400
–
NOM
–
NOTE
SYMBOL
D1
A2 A
A
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
–
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.100 BSC
0.300 BSC
0.130
0.325
0.280
b
E1
e
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
17
5279C–SEEPR–3/09
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
–
–
D
–
–
Side View
e
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
∅
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
18
AT24C256B
5279C–SEEPR–3/09
AT24C256B
8S2 - EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0°
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8°
NOM
NOTE
SYMBOL
A1
A
A1
b
5
5
C
D
E1
E
D
2, 3
L
SIDE VIEW
θ
e
1.27 BSC
4
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
4/7/06
TITLE
DRAWING NO.
REV.
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
2325 Orchard Parkway
San Jose, CA 95131
8S2
D
R
19
5279C–SEEPR–3/09
8U2-1 – dBGA2
D
A1 BALL PAD CORNER
1.
b
E
A1
A
A2
Top View
A1 BALL PAD CORNER
Side View
2
1
A
B
C
D
e
(e1)
d
(d1)
COMMON DIMENSIONS
(Unit of Measure = mm)
Bottom View
8 Solder Balls
SYMBOL
MAX
1.00
0.25
0.50
0.35
MIN
0.81
0.15
0.40
0.25
NOM
0.91
NOTE
A
A1
A2
b
0.20
0.45
0.30
1
D
2.35 BSC
3.73 BSC
0.75 BSC
0.74 REF
0.75 BSC
0.80 REF
1. Dimension 'b' is measured at the maximum solder ball diameter.
This drawing is for general information only.
E
e
e1
d
d1
6/24/03
TITLE
REV.
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
R
PO8U2-1
A
20
AT24C256B
5279C–SEEPR–3/09
AT24C256B
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
A
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
e
A2
–
D
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
DRAWING NO.
TITLE
REV.
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
B
8A2
R
21
5279C–SEEPR–3/09
8Y7 – SAP
PIN 1 INDEX AREA
A
PIN 1 ID
D
E1
L
A1
E
b
e
e1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.60
0.05
6.20
5.10
3.50
4.10
0.45
NOM
–
NOTE
A
A1
D
0.00
5.80
4.70
3.30
3.90
0.35
–
6.00
E
4.90
D1
E1
b
3.40
4.00
0.40
e
1.27 TYP
3.81 REF
0.60
e1
L
0.50
0.70
10/13/05
TITLE
DRAWING NO.
REV.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8Y7, 8-lead (6.00 x 4.90 mm Body) Ultra-Thin SOIC Array
Package (UTSAP) Y7
8Y7
B
R
22
AT24C256B
5279C–SEEPR–3/09
AT24C256B
Revision History
Doc.
Rev.
Date
Comments
5279C
5279B
3/2009
3/2008
Changed the Vcc to 5.5V in the test condition for Isb1
Format changes to document
AT24C256B product with date code 2008 work week 14 (814) or later
supports 5Vcc operation
5279A
1/2008
Initial document release
23
5279C–SEEPR–3/09
Headquarters
International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
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Tel: (852) 2721-9778
Fax: (852) 2722-1369
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Le Krebs
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1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
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8, Rue Jean-Pierre Timbaud
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78054 Saint-Quentin-en-
Yvelines Cedex
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Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Product Contact
Web Site
Technical Support
Sales Contact
www.atmel.com
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www.atmel.com/contacts
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www.atmel.com/literature
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intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI-
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