AT24C256CN-SH-B [ATMEL]
Two-wire Serial EEPROM 256K (32,768 x 8); 两线串行EEPROM 256K ( 32,768 ×8 )型号: | AT24C256CN-SH-B |
厂家: | ATMEL |
描述: | Two-wire Serial EEPROM 256K (32,768 x 8) |
文件: | 总23页 (文件大小:436K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• Low-voltage and Standard-voltage Operation
⎯ 1.8 (VCC = 1.8V to 5.5V)
• Internally Organized as 32,768 x 8
• Two-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 1 MHz (5.0V, 2.7V, 2.5V), and 400 kHz (1.8V) Compatibility
• Write Protect Pin for Hardware and Software Data Protection
• 64-byte Page Write Mode (Partial Page Writes Allowed)
• Self-timed Write Cycle (5 ms Max)
Two-wire
Serial EEPROM
256K (32,768 x 8)
• High Reliability
⎯ Endurance: One Million Write Cycles
⎯ Data Retention: 40 Years
AT24C256C
• Lead-free/Halogen-free Devices Available
• 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, EIAJ SOIC, 8-lead Ultra Thin Small
Array Package (SAP), 8-lead TSSOP, and 8-ball dBGA2 Packages
• Die Sales: Wafer Form, Waffle Pack and Bumped Wafers
Description
The AT24C256C provides 262,144 bits of serial electrically erasable and
programmable read-only memory (EEPROM) organized as 32,768 words of 8 bits
each. The device’s cascadable feature allows up to eight devices to share a common
two-wire bus. The device is optimized for use in many industrial and commercial
applications where low-power and low-voltage operation are essential. The devices
are available in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra
Thin SAP, 8-lead TSSOP, and 8-ball dBGA2 packages. In addition, the entire family is
available in a 1.8V (1.8V to 5.5V) version.
Table 1.
Pin Configurations
Function
8-lead SOIC
8-lead PDIP
Pin Name
A0
A1
VCC
A0
A1
1
2
3
4
8
7
6
5
VCC
1
2
3
4
8
7
6
5
A0 – A2
SDA
Address Inputs
Serial Data
WP
WP
A2
SCL
SDA
A2
SCL
SDA
GND
GND
SCL
Serial Clock Input
8-ball dBGA2
8-lead TSSOP
WP
Write Protect
Ground
8
7
6
5
1
2
3
4
A0
A0
1
2
3
4
8
7
6
5
VCC
VCC
GND
A1
A2
WP
WP
SCL
SDA
A1
SCL
SDA
A2
GND
GND
Bottom View
8-lead Ultra-Thin SAP
8
7
6
5
1
2
3
4
VCC
WP
A0
A1
SCL
SDA
A2
GND
Bottom View
8568A–SEEPR–11/08
Absolute Maximum Ratings*
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions beyond those indicated in
the operational sections of this specification are
not implied. Exposure to absolute maximum
rating conditions for extended periods may affect
device reliability.
Operating Temperature...........................• 55°C to +125°C
Storage Temperature ............................• 65°C to + 150°C
Voltage on Any Pin
with Respect to Ground................................• 1.0 V +7.0V
Maximum Operating Voltage.....................................6.25V
DC Output Current ..................................................5.0 mA
Figure 1.
Block Diagram
V
CC
GND
WP
START
STOP
LOGIC
SCL
SDA
SERIAL
CONTROL
LOGIC
EN
H.V. PUMP/TIMING
DATA RECOVERY
LOAD
COMP
DEVICE
ADDRESS
COMPARATOR
LOAD
INC
A2
A1
A0
R/W
DATA WORD
EEPROM
ADDR/COUNTER
Y DEC
SERIAL MUX
DOUT/ACK
LOGIC
DIN
DOUT
2
AT24C256C
8568A–SEEPR–11/08
AT24C256C
1.
Pin Descriptions
SERIAL CLOCK (SCL): The SCL input is used to positive-edge clock data into each EEPROM device and
negative-edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open drain driven and may be
wire-ORed with any number of other open-drain or open-collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs that are hardwired
(directly to GND or to VCC) for compatibility with other AT24Cxx devices. When the pins are hardwired, as many as eight
256K devices may be addressed on a single bus system. (Device addressing is discussed in detail under “Device
Addressing”) A device is selected when a corresponding hardware and software match is true. If these pins are left
floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capacitive coupling that may
appear during customer applications, Atmel recommends always connecting the address pins to a known state. When
using a pull-up resistor, Atmel recommends using 10kΩ or less.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write operations. When WP
is connected directly to VCC, all write operations to the memory are inhibited. If the pin is left floating, the WP pin will be
internally pulled down to GND. However, due to capacitive coupling that may appear during customer applications,
Atmel recommends always connecting the WP pins to a known state. When using a pull-up resistor, Atmel
recommends using 10kΩ or less.
3
8568A–SEEPR–11/08
2.
Memory Organization
AT24C256C, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64 bytes each. Random word
addressing requires a 15-bit data word address.
Table 2.
Pin Capacitance(1)
Applicable over recommended operating range from:
TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol
CI/O
Test Condition
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, SCL)
Max
8
Units
pF
Conditions
VI/O = 0V
CIN
6
pF
VIN = 0V
Note: 1. This parameter is characterized and is not 100% tested.
Table 3.
DC Characteristics
Applicable over recommended operating range from:
TAI = − 40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
Symbol
VCC1
ICC1
ICC2
Parameter
Supply Voltage
Supply Current
Supply Current
Test Condition
Min
Typ
Max
Units
V
1.8
5.5
2.0
3.0
1.0
VCC = 5.0V
VCC = 5.0V
VCC = 1.8V
READ at 400 kHz
1.0
2.0
mA
mA
μA
WRITE at 400 kHz
Standby Current
(1.8V option)
ISB1
VIN = VCC or VSS
VCC = 5.0V
6.0
3.0
μA
μA
Input Leakage
ILI
V
IN = VCC or VSS
0.10
0.05
Currentt VCC = 5.0V
Output Leakage
ILO
VOUT = VCC or VSS
3.0
μA
Currentt VCC = 5.0V
VIL
Input Low Level(1)
Input High Level(1)
Output Low Level
Output Low Level
0.6
VCC x 0.3
VCC + 0.5
0.4
V
V
V
V
VIH
VCC x 0.7
VOL2
VOL1
VCC = 3.0V
VCC = 1.8V
IOL = 2.1 mA
IOL = 0.15 mA
0.2
Note:
1. VIL min and VIH max are reference only and are not tested.
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AT24C256C
8568A–SEEPR–11/08
AT24C256C
Table 4.
AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from:
TAI = − 40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless otherwise noted). Test conditions are listed in Note 2.
1.8-volt
2.5, 5.0-volt
Symbol
Parameter
Units
Min
Max
Min
Max
fSCL
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time(1)
400
1000
kHz
μs
tLOW
1.3
0.6
0.4
0.4
tHIGH
tI
μs
100
0.9
50
ns
tAA
Clock Low to Data Out Valid
Time the bus must be free before a new transmission can start(1)
Start Hold Time
0.05
1.3
0.6
0.6
0
0.05
0.5
.25
0.25
0
0.55
μs
μs
μs
μs
μs
ns
μs
ns
μs
ns
ms
tBUF
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Set-up Time
Data In Hold Time
Data In Set-up Time
100
100
Inputs Rise Time(1)
0.3
0.3
tF
Inputs Fall Time(1)
300
100
tSU.STO
tDH
Stop Set-up Time
0.6
50
0.25
50
Data Out Hold Time
tWR
Write Cycle Time
5
5
Write
Endurance(1)
25°C, Page Mode, 3.3V
1,000,000
Cycles
Note: 1. This parameter is ensured by characterization and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5.5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
5
8568A–SEEPR–11/08
3.
Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin
may change only during SCL low time periods (refer to Figure 2). Data changes during SCL high periods will indicate a
start or stop condition as defined below.
Figure 2.
Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that must precede any other
command (refer to Figure 3).
Figure 3.
Start and Stop Definition
SDA
SCL
START
STOP
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop
command will place the EEPROM in a standby power mode (refer to Figure 3).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The
EEPROM sends a “0” during the ninth clock cycle to acknowledge that it has received each word.
STANDBY MODE: The AT24C256C features a low-power standby mode that is enabled upon power-up and after the
receipt of the stop bit and the completion of any internal operations.
6
AT24C256C
8568A–SEEPR–11/08
AT24C256C
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be protocol reset
by following these steps:
a) Create a start bit condition,
b) Clock 9 cycles,
c) Create another start bit followed by stop bit condition as shown below.
The device is ready for next communication after above steps has been completed.
Figure 4.
Software Reset
Dummy Clock Cycles
Start bit
Stop bit
Start bit
1
2
3
8
9
SCL
SDA
Figure 5.
Bus Timing
tHIGH
tF
tR
tLOW
tLOW
SCL
tSU.STA
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
Figure 6.
Write Cycle Timing
SCL
SDA
ACK
8th BIT
WORDn
(1)
t
wr
START
CONDITION
STOP
CONDITION
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the
internal clear/write cycle.
7
8568A–SEEPR–11/08
Figure 7.
Output Acknowledge
1
8
9
SCL
DATA IN
DATA OUT
START
ACKNOWLEDGE
8
AT24C256C
8568A–SEEPR–11/08
AT24C256C
4.
Device Addressing
The 256K EEPROM requires an 8-bit device address word following a start condition to enable the chip for a read or
write operation (refer to Figure 8). The device address word consists of a mandatory “1”, “0” sequence for the first four
most significant bits as shown. This is common to all two-wire EEPROM devices.
Figure 8.
Device Addressing
1
0
1
0
A2
A1
A0
R/W
MSB
LSB
The next three bits are the A2, A1, A0 device address bits to allow as many as eight devices on the same bus. These
bits must compare to their corresponding hardwired input pins. The A2, A1, and A0 pins use an internal proprietary
circuit that biases them to a logic low condition if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high,
and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made, the device will return
to a standby state.
DATA SECURITY: The AT24C256C has a hardware data protection scheme that allows the user to write protect the
whole memory when the WP pin is at VCC.
9
8568A–SEEPR–11/08
5.
Write Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device address word and
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a “0” and then clock in the first
8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a “0”. The addressing device, such as
a microcontroller, must then terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the
EEPROM will not respond until the write is complete (refer to Figure 9).
Figure 9.
Byte Write
Note:
* = DON’T CARE bit
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a stop condition after the
first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller
can transmit up to 63 more data words. The EEPROM will respond with a “0” after each data word received. The
microcontroller must terminate the page write sequence with a stop condition (refer to Figure 10).
Figure 10.
Page Write
Note:
* = DON’T CARE bit
The data word address lower six bits are internally incremented following the receipt of each data word. The higher
data word address bits are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If
more than 64 data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will
be overwritten. The address “roll over” during write is from the last byte of the current page to the first byte of the same
page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled,
acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The
read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM
respond with a “0”, allowing the read or write sequence to continue.
10
AT24C256C
8568A–SEEPR–11/08
AT24C256C
6.
Read Operations
Read operations are initiated the same way as write operations with the exception that the read/write select bit in the
device address word is set to “1”. There are three read operations: current address read, random address read, and
sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the
last read or write operation, incremented by one. This address stays valid between operations as long as the chip
power is maintained. The address “roll over” during read is from the last byte of the last memory page, to the first byte
of the first page.
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged by the EEPROM, the
current address data word is serially clocked out. The microcontroller does not respond with an input “0” but does
generate a following stop condition (refer to Figure 11).
Figure 11.
Current Address Read
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the
device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller
must generate another start condition. The microcontroller now initiates a current address read by sending a device
address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the
data word. The microcontroller does not respond with a “0” but does generate a following stop condition. (Refer to
Figure 12)
Figure 12.
Random Read
Note:
* = DON’T CARE bit
11
8568A–SEEPR–11/08
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After
the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an
acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When
the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a “0” but does generate a
following stop condition (refer to Figure 13).
Figure 13.
Sequential Read
12
AT24C256C
8568A–SEEPR–11/08
AT24C256C
7.
AT24C256C Ordering Codes
Ordering Code
Voltage
Package
Operating Range
AT24C256C-PU (Bulk Form Only)
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8Y7
8U2-1
AT24C256CN-SH-B(1) (NiPdAu Lead Finish)
AT24C256CN-SH-T(2) (NiPdAu Lead Finish)
AT24C256CW-SH-B(1) (NiPdAu Lead Finish)
AT24C256CW-SH-T(2) (NiPdAu Lead Finish)
AT24C256C-TH-B(1) (NiPdAu Lead Finish)
AT24C256C-TH-T(2) (NiPdAu Lead Finish)
AT24C256CY7-YH-T(2) (NiPdAu Lead Finish)
AT24C256CU2-UU-T(2)
Lead-free/Halogen-free
Industrial Temperature
(−40°C to 85°C)
Industrial Temperature
AT24C256C-W-11
1.8
Die Sale
(−40°C to 85°C)
Note: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP and dBGA2 = 5K per reel. SAP = 3K per reel.
EIAJ = 2K per reel.
3. Available in tape & reel and wafer form; order as SL788 for inkless wafer form.
Bumped die available upon request. Contact Serial Interface Marketing.
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.200” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-ball, die Ball Grid Array Package (dBGA2)
8S1
8S2
8U2-1
8A2
8-lead, 4.40 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8-lead, 6.00 mm x 4.90 mm Body, Ultra Thin, Dual Footprint, Non-leaded, Small Array Package (SAP)
Options
8Y7
1.8
Low-voltage (1.8V to 5.5V)
13
8568A–SEEPR–11/08
8.
Part Marketing Scheme
8-PDIP
Top Mark
Seal Year
Seal Week
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
6: 2006
7: 2007
0: 2010
--- --- --- --- --- --- --- ---
1: 2011
A
T
M
L
U
Y
W
W
8: 2008
9: 2009
2: 2012
3: 2013
:: : :::: :
:: : :::: ::
--- --- --- --- --- --- --- ---
2
*
E
C
1
50 = Week 50
52 = Week 52
Lot Number
--- --- --- --- --- --- --- ---
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
Pin 1 Indicator (Dot)
No Bottom Mark
8-SOIC
Top Mark
Seal Year
Seal Week
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
6: 2006
7: 2007
0: 2010
--- --- --- --- --- --- --- ---
1: 2011
1
A
T
M
L
H
Y
W
W
8: 2008
9: 2009
2: 2012
3: 2013
:: : :::: :
:: : :::: ::
--- --- --- --- --- --- --- ---
2
*
E
C
1
50 = Week 50
52 = Week 52
Lot Number
--- --- --- --- --- --- --- ---
Pin 1 Indicator (Dot)
Lot Number to Use ALL Characters in Marking
BOTTOM MARK
No Bottom Mark
8-TSSOP
Top Mark
Pin 1 Indicator (Dot)
--- --- --- ---
Y = SEAL YEAR
WW = SEAL WEEK
02 = Week 2
04 = Week 4
6: 2006
7: 2007
0: 2010
1: 2011
*
H
Y
W
W
8: 2008
9: 2009
2: 2012
3: 2013
:: : :::: :
:: : :::: ::
--- --- --- --- ---
2
E
C
1
50 = Week 50
52 = Week 52
--- --- --- --- ---
Bottom Mark
--- --- --- --- --- --- ---
XX = Country of Origin
X
X
--- --- --- --- --- --- ---
A
A
A
A
A
A
A
<- Pin 1 Indicator
14
AT24C256C
8568A–SEEPR–11/08
AT24C256C
8-Ultra Thin SAP
Seal Year
Top Mark
Seal Year
Seal Week
Y = SEAL YEAR
WW = SEAL WEEK
6: 2006
7: 2007
0: 2010
02 = Week 2
04 = Week 4
--- --- --- --- --- --- --- ---
1: 2011
A
T
M
L
H
Y
W
W
8: 2008
9: 2009
2: 2012
3: 2013
:: : :::: :
:: : :::: ::
--- --- --- --- --- --- --- ---
2
E
C
1
50 = Week 50
52 = Week 52
Lot Number
--- --- --- --- --- --- --- ---
*
Pin 1 Indicator (Dot)
dBGA2
Top Mark
Line 1 ----------->
Line 2 ----------->
2ECU
YMTC
<---
Pin 1 This Corner
Y = ONE DIGIT YEAR CODE
4: 2004
5: 2005
6: 2006
7: 2007
5
8: 2008
9: 2009
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)
A = JANUARY
B = FEBRUARY
" " """""""
J = OCTOBER
K = NOVEMBER
L = DECEMBER
TC = TRACE CODE
15
8568A–SEEPR–11/08
9.
Packaging Information
8P3 – PDIP
Figure 1.
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
•
MAX
0.210
0.195
0.022
0.070
0.045
0.014
0.400
•
NOM
•
NOTE
SYMBOL
D1
A2 A
A
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
•
5
6
6
b2
b3
c
D
3
3
4
3
D1
E
b2
L
0.310
0.250
0.325
0.280
b3
4 PLCS
E1
e
b
0.100 BSC
0.300 BSC
0.130
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001,Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or prortusions. Mold Flash or protrusions shall not •
exceed 0.010 inch.
4. E and eA measured with the leads consrtained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not •
exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO. REV.
8P3
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
B
R
16
AT24C256C
8568A–SEEPR–11/08
AT24C256C
8S1 – JEDEC SOIC
Figure 2.
8S1 – JEDECSOIC
C
1
E
E1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
e
B
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A
–
–
A1
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
e
–
–
–
D
–
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
Side View
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions,
tolerances, datums, etc.
10/07/03
DRAWING NO. REV.
8S1
TITLE
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
B
R
17
8568A–SEEPR–11/08
8S2 - EIAJ SOIC
Figure 14.
8S2 - EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
END VIEW
e
COMMON DIMENSIONS
(Unit of Measure = mm)
b
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0˚
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8˚
NOM
NOTE
SYMBOL
A
A1
A1
b
5
5
C
D
E1
E
D
2, 3
L
SIDE VIEW
θ
e
4
1.27 BSC
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
04/07/06
TITLE
DRAWING NO. REV.
8S2
2325 Orchard Parkway
San Jose, CA 95131
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
D
R
18
AT24C256C
8568A–SEEPR–11/08
AT24C256C
8U2-1 – dBGA2
Figure 15.
8U2-1 – dBGA2
D
A1 BALL PAD CORNER
1.
b
E
A1
A
A2
Top View
A1 BALL PAD CORNER
Side View
2
1
A
B
C
D
e
COMMON DIMENSIONS
(Unit of Measure = mm)
(e1)
SYMBOL
MAX
1.00
0.25
0.50
0.35
MIN
0.81
0.15
0.40
0.25
NOM
0.91
NOTE
A
d
A1
A2
b
0.20
0.45
(d1)
0.30
1
D
2.35 BSC
3.73 BSC
0.75 BSC
0.74 REF
0.75 BSC
0.80 REF
Bottom View
E
8 Solder Balls
e
e1
d
1. Dimension 'b' is measured at the maxi mum solder ball diamete r.
This drawing is for general information only.
d1
06/24/03
DRAWING NO. REV.
PO8U2-1
TITLE
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
A
R
19
8568A–SEEPR–11/08
8A2 – TSSOP
Figure 16.
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
L
N
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
Top View
MIN
MAX
NOM
3.00
NOTE
SYMBOL
A
D
2.90
3.10
2, 5
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
e
A2
A2
b
0.80
0.19
1.00
D
–
e
0.65 BSC
0.60
Side View
L
0.45
0.75
L1
1.00 REF
Notes:
1. This drawing is for general information only. Refer to JEDEC D rawing MO-153, Variation AA, for proper dimension s,
tolerances, datums, etc.
2. Dimension D does not include mold Flash, prot rusions or gate burrs. Mold Flash, prot rusions and gate burrs shall not
exceed 0.15 mm (0.006 in) per sid e.
3. Dimension E1 does not include inter-lead Flash or prot rusions. Inter-lead Flash and prot rusions shall not exceed
0.25 mm (0.010 in) per sid e.
4. Dimension b does not include Dambar prot rusion. Allowable Dambar prot rusion shall be 0.08 mm total in excess of the
b dimension at maxi mum material condition. Dambar cannot be located on the l ower radius of the foot. Minimum space
between protrusion and adjacent lead is 0.07 mm .
5. Dimension D and E1 to be dete rmined at Datum Plane H .
05/30/02
DRAWING NO. REV.
8A2
TITLE
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
B
R
20
AT24C256C
8568A–SEEPR–11/08
AT24C256C
8Y7 – SAP
Figure 17.
8Y7 – SAP
PIN 1 INDEX AREA
A
PIN 1 ID
D
E1
L
A1
E
b
e
e1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.60
0.05
6.20
5.10
3.50
4.10
0.45
NOM
–
NOTE
A
A1
D
0.00
5.80
4.70
3.30
3.90
0.35
–
6.00
E
4.90
D1
E1
b
3.40
4.00
0.40
e
1.27 TYP
3.81 REF
0.60
e1
L
0.50
0.70
10/13/05
DRAWING NO. REV.
TITLE
8Y7, 8-lead (6.00 x 4.90 mm Body)
Ultra-Thin SOIC Array Package (UTSAP) Y7
1150 E. Cheyeene Mtn. Blvd.
Colorado Springs, CO 80906
8Y7
B
R
21
8568A–SEEPR–11/08
Appendix A. Revision History
Doc. Rev.
Date
Comments
8568A
11/2008
Initial document release
22
AT24C256C
8568A–SEEPR–11/08
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8568A–SEEPR–11/08
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